Order this document by MRF891/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for 24 volt UHF large–signal, common–emitter amplifier applications in industrial and commercial FM equipment operating in the range of 800 – 960 MHz. • Specified 24 Volt, 900 MHz Characteristics Output Power = 5.0 Watts Power Gain = 9.0 dB Min Efficiency = 50% Min 5.0 W, 900 MHz RF POWER TRANSISTORS NPN SILICON • Series Equivalent Large–Signal Characterization • Capable of Withstanding 20:1 VSWR Load Mismatch at Rated Output Power and Supply Voltage • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Silicon Nitride Passivated • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 319–07, STYLE 2 MRF891 MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 30 Vdc Collector–Emitter Voltage VCES 55 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 0.6 Adc Total Device Dissipation @ TA = 50°C (1) Derate above 50°C PD 18 0.143 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C CASE 319A–02, STYLE 2 MRF891S THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol Max Unit RθJC 7.0 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) V(BR)CEO 30 — — Vdc Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) V(BR)CES 55 — — Vdc Emitter–Base Breakdown Voltage (IE = 0.5 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICES — — 1.0 mAdc hFE 30 — 150 — Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 30 Vdc, VBE = 0, TC = 25°C) ON CHARACTERISTICS DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF891 MRF891S 2–11 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Cob — 6.5 8.0 pF Gpe 9.0 10 — dB Collector Efficiency (VCC = 24 Vdc, Pout = 5.0 W, f = 900 MHz) η 50 57 — % Load Mismatch Stress (VCC = 24 Vdc, Pin = 0.63 W, f = 900 MHz, VSWR = 20:1, all phase angles) ψ Characteristic DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (Broadband) (VCC = 24 Vdc, Pout = 5.0 W, f = 900 MHz) No Degradation in Output Power L1 L6 C11 C7 C12 L5 L2 + VCC SOCKETS SHORTED PLUG C6 (FOR ∆ VRE TEST) + C5 C13 + ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ T1 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ L4 L3 C3 C1 T2 C2 C1 — 39 pF, 100 Mil Chip Capacitor C2, C8, C15 — 0.8– 8.0 pF Johansen Gigatrim C3, C4 — 12 pF, Mini–Unelco C5, C13 — 1000 pF, 350 V Unelco C6, C14 — 10 µF, 25 V Tantalum C7, C11, C12 — 91 pF, Mini–Unelco C9 — 5.0 pF, MIni–Unelco C10 — 47 pF, 100 Mil Chip Capacitor ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ C9 DUT C10 T3 0.685″ C8 C4 C14 ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ GND T4 C15 L1, L6 — 10 Turns #20 AWG Around 10 Ohm 1/2 Watt Resistor L2, L5 — Ferrite Bead L3 — 4 Turns #16 AWG Choke L4 — 0.5″, #18 AWG Wire T1, T4 — 50 Ohm Microstrip Line T2 — W = 165 Mils, ȏ = 1946 Mils T3 — W = 166 Mils, ȏ = 1563 Mils PC Board — 0.031″ Glass Teflon (εr = 2.56) Figure 1. Broadband Test Fixture MRF891 MRF891S 2–12 MOTOROLA RF DEVICE DATA 850 MHz 7 900 MHz Pout , OUTPUT POWER (WATTS) 6 960 MHz 5 4 3 VCC = 24 Vdc 2 1 0.6 W 6 4 0.2 W 2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Pin, INPUT POWER (WATTS) 0.8 0.9 18 1 Figure 2. Output Power versus Input Power Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 22 24 VCC, SUPPLY VOLTAGE (VOLTS) 26 28 8 Pin = 1 W 7 0.6 W 6 5 4 3 0.2 W 2 0 20 Figure 3. Output Power versus Supply Voltage 8 1 Pin = 1 W f = 900 MHz VCC = 24 Vdc 850 7 Pin = 0.6 W VCC = 24 Vdc 6 Pout 5 4 3 50% 2 2.0:1 INPUT VSWR 1 875 900 925 f, FREQUENCY (MHz) 950 Figure 4. Output Power versus Frequency 0 850 875 900 925 f, FREQUENCY (MHz) 1.6:1 950 VCC = 24 Vdc, Pout = 5.0 W, Eff > 50% f MHz Zin Ohms f MHz ZOL* Ohms 850 900 960 1.1 + j3.0 1.0 + j3.25 1.18 + j3.5 850 900 960 8.34 – j13.2 9.1 – j13.8 10.4 – j14.6 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power , voltage and frequency. Zin f = 850 MHz 900 1.2:1 Figure 5. Typical Broadband Circuit Performance VCC = 24 Vdc, Pout = 5.0 W, Eff > 50% 960 60% ηc η c , COLLECTOR EFFICIENCY 0 8 VSWR Pout , OUTPUT POWER (WATTS) 8 f = 850 MHz Zo = 10 Ω 900 960 ZOL* Figure 6. Series Equivalent Input Impedance MOTOROLA RF DEVICE DATA Figure 7. Series Equivalent Output Impedance MRF891 MRF891S 2–13 PACKAGE DIMENSIONS Q 2 PL -AL IDENTIFICATION NOTCH 6 0.15 (0.006) 5 T A M M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 -N1 2 3 K F D 2 PL 0.38 (0.015) M 0.38 (0.015) B T A M N M T A M M N M J C H E -T- STYLE 2: PIN 1. 2. 3. 4. 5. 6. EMITTER (COMMON) BASE (INPUT) EMITTER (COMMON) EMITTER (COMMON) COLLECTOR (OUTPUT) EMITTER (COMMON) DIM A B C D E F H J K L N Q INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 SEATING PLANE CASE 319–07 ISSUE M MRF891 IDENTIFICATION NOTCH A 6 5 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K B 1 2 3 STYLE 2: PIN 1. 2. 3. 4. 5. 6. F D J C EMITTER BASE EMITTER EMITTER COLLECTOR EMITTER DIM A B C D F H J K INCHES MIN MAX 0.355 0.365 0.225 0.235 0.110 0.125 0.115 0.125 0.075 0.085 0.035 0.045 0.004 0.006 0.090 0.110 MILLIMETERS MIN MAX 9.02 9.27 5.72 5.96 2.80 3.17 2.93 3.17 1.91 2.15 0.89 1.14 0.11 0.15 2.29 2.79 SEATING PLANE H CASE 319A–02 ISSUE B MRF891S Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF891 MRF891S 2–14 ◊ *MRF891/D* MRF891/D MOTOROLA RF DEVICE DATA