Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200– 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50% Min 20 W, 400 MHz RF POWER TRANSISTOR NPN SILICON • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability • Computer–Controlled Wirebonding Gives Consistent Input Impedance MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 33 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous Collector Current — Peak IC 2.2 3.0 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 55 310 Watts mW/°C Storage Temperature Range Tstg – 65 to +150 °C CASE 244–04, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 3.2 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) V(BR)CEO 33 — — Vdc Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) V(BR)CES 60 — — Vdc Collector–Base Breakdown Voltage (IC = 20 mAdc, IE = 0) V(BR)CBO 60 — — Vdc Emitter–Base Breakdown Voltage (IE = 2.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 2.0 mAdc hFE 20 — 80 — Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF323 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Cob — 20 24 pF Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 20 W, f = 400 MHz) GPE 10 11 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 20 W, f = 400 MHz) η 50 60 — % Load Mismatch (VCC = 28 Vdc, Pout = 20 W, f = 400 MHz, VSWR = 30:1 all phase angles) ψ DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Figure 1) No Degradation in Output Power L4 C9 C8 C10 + – C11 + 28 V – L3 C12 Z3 RF OUTPUT Z4 DUT RF INPUT Z1 L2 Z2 L1 C1 C2 C5 C3 C6 C7 C4 R1 C1, C2, C6 — 1.0 – 20 pF Johanson Trimmer (JMC 5501) C3, C4 — 47 pF ATC Chip Capacitor C5, C8 — 0.1 µF Erie Redcap C7 — 0.5 – 10 pF Johanson Trimmer (JMC 5201) C9, C10 — 680 pF Feedthru C11 — 1.0 µF 50 Volt Tantalum C12 — 0.018 µF Vitramon Chip Capacitor L1 — 0.33 µH Molded Choke with Ferroxcube Bead L1 — (Ferroxcube 56–590–65/4B) on Ground End L2 — 6 Turns #20 Enamel, 1/4″ ID, Closewound L3 — 4 Turns #20 Enamel, 1/8″ ID, Closewound L4 — Ferroxcube VK200–19/4B R1 — 5.1 Ω 1/4 Watt Z1 — Microstrip 0.1″ W x 1.35″ L Z2 — Microstrip 0.1″ W x 0.55″ L Z3 — Microstrip 0.1″ W x 0.8″ L Z4 — Microstrip 0.1″ W x 1.75″ L Board — Glass Teflon εr = 2.56, t = 0.062″ Input/Output Connectors — Type N Figure 1. 400 MHz Test Circuit Schematic MRF323 2 MOTOROLA RF DEVICE DATA 25 25 20 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) f = 200 MHz Pin = 3 W 2.5 W 15 2W 1.5 W 10 1W 0.7 W 5 0 200 20 15 10 5 300 400 VCC = 28 V 0 500 0 1 f, FREQUENCY (MHz) 3 4 5 Figure 3. Output Power versus Input Power 24 22 Pin = 1.8 W G PE , COMMON EMITTER AMPLIFIER POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) 2 Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Frequency 20 16 1.1 W 12 8 f = 400 MHz 4 10 500 0.4 W VCC = 28 V 0 400 14 18 22 26 30 Po = 20 W VCC = 28 V 18 14 10 6 2 0 200 300 400 500 VCC, SUPPLY VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency MOTOROLA RF DEVICE DATA MRF323 3 0 –5 400 f = 200 MHz 450 5 Zin – 10 10 500 5 450 500 400 ZOL* 10 f = 200 MHz Pout = 20 W, VCC = 28 V f MHz Zin Ohms ZOL* Ohms 200 400 450 500 0.6 – j0.23 0.71 + j1.79 1.2 + j3.8 2.3 + j5.5 7.2 – j11.4 6.0 – j6.87 5.9 – j5.1 6.2 – j3.1 15 20 25 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, ZOL* = voltage and frequency. Figure 6. Series Equivalent Impedance MRF323 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS 2 3 D 1 4 K M T F A J SEATING PLANE U P S C 8–32 NC 2A WRENCH FLAT E DIM A B C D E G J K M P S T U STYLE 1: PIN 1. 2. 3. 4. B MILLIMETERS MIN MAX 7.06 7.26 6.20 6.50 14.99 16.51 5.46 5.96 1.40 1.65 1.52 ––– 0.08 0.17 11.05 ––– 45_NOM ––– 1.27 3.00 3.25 1.40 1.77 2.92 3.68 INCHES MIN MAX 0.278 0.286 0.244 0.256 0.590 0.650 0.215 0.235 0.055 0.065 0.060 ––– 0.003 0.007 0.435 ––– 45 _NOM ––– 0.050 0.118 0.128 0.055 0.070 0.115 0.145 EMITTER BASE EMITTER COLLECTOR CASE 244–04 ISSUE J MOTOROLA RF DEVICE DATA MRF323 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF323 6 ◊ *MRF323/D* MRF323/D MOTOROLA RF DEVICE DATA