Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 20 dB Efficiency — 41% (Two Tones) IMD — - 31 dBc • Integrated ESD Protection • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. • 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. CASE 1265 - 09, STYLE 1 TO - 270- 2 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, + 15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 139 0.93 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 1.08 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model C7 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN N - Channel Enhancement - Mode Lateral MOSFET MRF9030NR1 1 Table 5. Electrical Characteristics (Tc = 25°c Unless Otherwise Noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) 3 3.8 5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 0.7 Adc) VDS(on) — 0.23 0.4 Vdc gfs — 2.7 — S Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 49 — pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 27 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.2 — pF Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 18 20 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 37 41 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — - 31 - 28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — - 13 -9 dB Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps — 20 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 40.5 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — - 31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — - 12 — dB On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Functional Tests (In Freescale Test Fixture) NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Off Characteristics MRF9030NR1 2 RF Device Data Freescale Semiconductor B2 B1 + NOT RECOMMENDED FOR NEW DESIGN C8 RF INPUT C7 L1 L2 C5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z10 Z9 C15 + + + C16 C17 C18 C9 DUT Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 RF OUTPUT C14 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C3 C4 C6 0.260″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.200″ x 0.270″ Microstrip 0.330″ x 0.270″ Microstrip 0.140″ x 0.270″ x 0.520″, Taper 0.040″ x 0.520″ Microstrip 0.090″ x 0.520″ Microstrip 0.370″ x 0.520″ Microstrip (MRF9030NR1) 0.290″ x 0.520″ Microstrip (MRF9030NBR1) 0.130″ x 0.520″ Microstrip (MRF9030NR1) 0.210″ x 0.520″ Microstrip (MRF9030NBR1) C10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Board C11 C12 C13 0.360″ x 0.270″ Microstrip 0.050″ x 0.270″ Microstrip 0.110″ x 0.060″ Microstrip 0.220″ x 0.060″ Microstrip 0.100″ x 0.060″ Microstrip 0.870″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.340″ x 0.060″ Microstrip Taconic RF - 35- 0300, εr = 3.5 Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values Part Description Part Number NOT RECOMMENDED FOR NEW DESIGN VDD VGG Manufacturer B1 Short Ferrite Bead, Surface Mount 2743019447 Fair- Rite B2 Long Ferrite Bead, Surface Mount 2743029446 Fair- Rite C1, C7, C14, C15 47 pF Chip Capacitors ATC100B470JT500XT ATC C2 0.6- 4.5 Variable Capacitor, Gigatrim 27271SL Johanson C3, C11 3.9 pF Chip Capacitors ATC100B3R6BT500XT ATC C4, C12 0.8- 8.0 Variable Capacitors, Gigatrim 27291SL Johanson C5, C6 6.8 pF Chip Capacitors ATC100B7R5JT500XT ATC C8, C16, C17 10 μF, 35 V Tantulum Chip Capacitors T491D106K035AT Kemet C9, C10 10 pF Chip Capacitors ATC100B100JT500XT ATC C13 1.8 pF Chip Capacitor (MRF9030NR1) 0.6- 4.5 Variable Capacitor, Gigatrim (MRF9030NBR1) ATC100B1R8BT500XT 27271SL ATC Johanson C18 220 μF Electrolytic Chip Capacitor MCAX63V227M13X22 Multicomp L1, L2 12.5 nH Coilcraft Inductors A04T- 5 Coilcraft MRF9030NR1 RF Device Data Freescale Semiconductor 3 C18 C8 VGG B1 VDD B2 C15 L1 C2 C5 C4 WB1 C3 C6 C14 L2 CUT OUT AREA C1 C16 C17 C9 WB2 C10 C11 C12 C13 900 MHz Rev 02 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN C7 MRF9030NR1 4 RF Device Data Freescale Semiconductor 20 40 η 19 35 18 −30 IMD 17 −32 IRL 16 VDD = 26 Vdc Pout = 30 W (PEP) IDQ = 250 mA Two−Tone, 100 kHz Tone Spacing 14 930 935 940 945 950 955 −34 −36 −38 960 −10 −12 −14 −16 −18 f, FREQUENCY (MHz) Figure 3. Class AB Broadband Circuit Performance 20.5 300 mA 20 250 mA 19.5 VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 200 mA 19 18.5 0.1 −15 −20 −25 −30 −35 IDQ = 200 mA −40 300 mA −45 −50 250 mA −55 1 10 100 0.1 VDD = 26 Vdc 375 mA f1 = 945 MHz f2 = 945.1 MHz 1 100 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power −10 22 VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz −20 −30 20 3rd Order −40 −50 5th Order −60 7th Order −80 0.1 1 10 100 Gps 50 18 40 16 30 14 20 12 −70 60 10 0.1 VDD = 26 Vdc IDQ = 250 mA f = 945 MHz η 1 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power 10 0 100 η, DRAIN EFFICIENCY (%) IDQ = 375 mA G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 21 IMD, INTERMODULATION DISTORTION (dBc) 21.5 NOT RECOMMENDED FOR NEW DESIGN G ps , POWER GAIN (dB) 45 Gps 15 IMD, INTERMODULATION DISTORTION (dBc) NOT RECOMMENDED FOR NEW DESIGN 21 IRL, INPUT RETURN LOSS (dB) 50 IMD, INTERMODULATION DISTORTION (dBc) 22 h , DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS MRF9030NR1 RF Device Data Freescale Semiconductor 5 NOT RECOMMENDED FOR NEW DESIGN G ps , POWER GAIN (dB) 20 60 Gps 40 20 18 VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz η 16 0 14 12 10 0.1 −20 −40 IMD 1 10 −60 100 Pout, OUTPUT POWER (WATTS) PEP Figure 8. Power Gain, Efficiency and IMD versus Output Power MTTF FACTOR (HOURS X AMPS2) 1010 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 9. MTTF Factor versus Junction Temperature NOT RECOMMENDED FOR NEW DESIGN 22 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS MRF9030NR1 6 RF Device Data Freescale Semiconductor Zsource f = 930 MHz Zload f = 960 MHz f = 960 MHz f = 930 MHz VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP) f MHz Zload Ω Zsource Ω 930 1.07 + j0.160 3.53 - j0.20 945 1.14 + j0.385 3.41 - j0.24 960 1.17 + j0.170 3.60 - j0.17 Zsource = Test circuit impedance as measured from gate to ground. Zload Note: = Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Output Matching Network Device Under Test Input Matching Network Z source Z NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Zo = 5 Ω load Figure 10. Series Equivalent Source and Load Impedance MRF9030NR1 RF Device Data Freescale Semiconductor 7 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN PACKAGE DIMENSIONS MRF9030NR1 8 RF Device Data Freescale Semiconductor MRF9030NR1 RF Device Data Freescale Semiconductor 9 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN MRF9030NR1 10 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 12 Sept. 2008 Description • Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. • Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 8 - 10. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC Standard Package Number. • Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Removed Fig. 3, Test Circuit Component Layout (MRF9030NBR1) and Fig. 12, Series Equivalent Source and Load Impedance (MRF9030NBR1), renumbered Figures accordingly, p. 4 - 7 • Added Product Documentation and Revision History, p. 11 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers MRF9030NR1 RF Device Data Freescale Semiconductor 11 Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN How to Reach Us: RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF9030NR1 Document Number: MRF9030N Rev. 12, 9/2008 12 RF Device Data Freescale Semiconductor