FREESCALE MRFG35010R1

Freescale Semiconductor
Technical Data
Document Number: MRFG35010
Rev. 9, 1/2008
MRFG35010R1 replaced by MRFG35010AR1.
MRFG35010R1
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
3.5 GHz, 10 W, 12 V
POWER FET
GaAs PHEMT
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 1 Watt
Power Gain — 10 dB
Efficiency — 30%
• 10 Watts P1dB @ 3550 MHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
CASE 360D - 02, STYLE 1
NI - 360HF
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
VDSS
15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
28.3
0.19
W
W/°C
Gate - Source Voltage
VGS
-5
Vdc
RF Input Power
Pin
33
dBm
Tstg
- 65 to +175
°C
Tch
175
°C
TC
- 20 to +90
°C
Symbol
Value
Unit
RθJC
5.3
4.8
°C/W
Drain - Source Voltage
Storage Temperature Range
Channel Temperature
(1)
Operating Case Temperature Range
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Designed for WLL/MMDS or UMTS driver applications with frequencies from
1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or
Class A linear base station applications.
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Class A
Class AB
1. For reliable operation, the operating channel temperature should not exceed 150°C.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35010R1
1
Characteristic
ARCHIVE INFORMATION
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(VDS = 3.5 Vdc, VGS = 0 Vdc)
IDSS
—
2.9
—
Adc
Off State Leakage Current
(VGS = - 0.4 Vdc, VDS = 0 Vdc)
IGSS
—
<1
100
μAdc
Off State Drain Current
(VDS = 12 Vdc, VGS = - 1.9 Vdc)
IDSO
—
0.09
1
mAdc
Off State Current
(VDS = 28.5 Vdc, VGS = - 2.5 Vdc)
IDSX
—
5
15
mAdc
Gate - Source Cut - off Voltage
(VDS = 3.5 Vdc, IDS = 15 mA)
VGS(th)
- 1.2
- 0.8
- 0.7
Vdc
Quiescent Gate Voltage
(VDS = 12 Vdc, ID = 180 mA)
VGS(Q)
-1
- 0.8
- 0.5
Vdc
Power Gain
(VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz)
Gps
9
10
—
dB
Output Power, 1 dB Compression Point
(VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz)
P1dB
—
10
—
W
hD
23
30
—
%
ACPR
—
- 42
- 40
dBc
Drain Efficiency
(VDD = 12 Vdc, IDQ = 180 mA, Pout = 1 W Avg.,
f = 3.55 GHz)
Adjacent Channel Power Ratio
(VDD = 12 Vdc, Pout = 1 W Avg., IDQ = 180 mA,
f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
ARCHIVE INFORMATION
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted)
MRFG35010R1
2
RF Device Data
Freescale Semiconductor
VDD
Q1
R7
R1
C14
C12
D1
1
8
C16
C13
C19
C15
C18
C20
R2
R9
NC
2
C11
R3
7
6
4
5
C17
C9
U1
3
R5
R6
C7
C10
C8
C5
C6
C3
C4
C2
R8
Z9
Z10
Z8
Z11
RF
INPUT
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z12
Z13
Z14
Z15
Z16
C1
Z17
C21
C1, C21
C2, C20
C3, C19
C4, C18
C5, C10, C16, C17
C6, C11, C12, C15
C7, C14
C8, C13
C9
D1
R1
R2
R3
R4
R5
R6
R7
R8, R9
6.8 pF Chip Capacitors, ATC
10 pF Chip Capacitors, ATC
100 pF Chip Capacitors, ATC
100 pF Chip Capacitors, ATC
1000 pF Chip Capacitors, ATC
0.1 μF Chip Capacitors, ATC
39K Chip Capacitors, ATC
22 μF Tantalum Chip Capacitors
6.8 μF Tantalum Chip Capacitor
5.1 V Zener Diode, MA8051CT - ND
22.1 kΩ, 1/4 W 1%, Chip Resistor
5K Trim Pot, #3224W - 1 - 502E
12 kΩ, 1/4 W 1%, Chip Resistor
100 kΩ, 1/4 W 1%, Chip Resistor
39 kΩ, 1/4 W 1%, Chip Resistor
10 Ω, 1/4 W 1%, Chip Resistor
2.2 kΩ, 1/4 W 1%, Chip Resistor
50 Ω, 1/4 W 1%, Chip Resistors
U1
Q1
PCB
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8, Z11
Z9, Z10
Z12
Z13
Z14
Z15
Z16
Z17
Voltage Converter, LTC 1261
Switch, MTP23P06V
Rogers RO4350, 0.020″, εr = 3.50
0.044″ x 0.250″ Microstrip
0.044″ x 0.030″ Microstrip
0.615″ x 0.050″ Microstrip
0.044″ x 0.070″ Microstrip
0.270″ x 0.490″ Microstrip
0.044″ x 0.470″ Microstrip
0.434″ x 0.110″ Microstrip
0.015″ x 0.527″ Microstrip
0.290″ x 90° Microstrip Radial Stub
0.184″ x 0.390″ Microstrip
0.040″ x 0.580″ Microstrip
0.109″ x 0.099″ Microstrip
0.030″ x 0.225″ Microstrip
0.080″ x 0.240″ Microstrip
0.044″ x 0.143″ Microstrip
ARCHIVE INFORMATION
ARCHIVE INFORMATION
R4
Figure 1. 3.4 - 3.6 GHz Single Supply Bias Sequencing Test Circuit Schematic
MRFG35010R1
RF Device Data
Freescale Semiconductor
3
VDD = 12 V
R7
C11
R3
R2
R1
C12 D1
C10
R6
C6
S
U1
R9
R5
C9
C7
Q1
D
R4
C8
G
C17
C18
C4
C5
C13
C16 C15 C14
C19
GND
C3
ARCHIVE INFORMATION
C2
R8
INPUT
C1
CUT OUT AREA
C21
OUTPUT
MRFG35010
Rev−06
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 3.4 - 3.6 GHz Test Circuit Component Layout
ARCHIVE INFORMATION
C20
MRFG35010R1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
13.5
80
VDS = 12 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.5 dB P/A 3GPP W−CDMA
ΓS = 0.857é−144.24_, ΓL = 0.798é−164.30_
12.5
70
60
12
50
Gps
11.5
40
11
30
ηD
10.5
20
10
10
0
0.1
1
10
Pout, OUTPUT POWER (WATTS)
Figure 3. Power Gain and Drain Efficiency
versus Output Power
0
IRL
ACPR (dBc)
−10
−10
−20
−20
−30
−30
−40
−40
ACPR
−50
−50
VDS = 12 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.5 dB P/A 3GPP W−CDMA
ΓS = 0.857é−144.24_, ΓL = 0.798é−164.30_
−60
−70
0.1
1
−60
IRL, INPUT RETURN LOSS (dB)
0
−70
10
Pout, OUTPUT POWER (WATTS)
Figure 4. W - CDMA ACPR and Input Return Loss
versus Output Power
36
Pout , OUTPUT POWER (dBm)
34
32
45
30
28
30
Pout
26
ηD
24
15
ηD , DRAIN EFFICIENCY (%)
60
VDS = 12 Vdc, IDQ = 180 mA
f = 3.55 GHz, 8.5 dB P/A 3GPP W−CDMA
ΓS = 0.857é−144.24_, ΓL = 0.798é−164.30_
ARCHIVE INFORMATION
9.5
ARCHIVE INFORMATION
ηD , DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
13
22
20
0
5
10
15
20
25
Pin, INPUT POWER (dBm)
Figure 5. W - CDMA Output Power and Drain
Efficiency versus Input Power
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MRFG35010R1
RF Device Data
Freescale Semiconductor
5
f = 3600 MHz
Zload
f = 3500 MHz
Zsource
f = 3600 MHz
f = 3500 MHz
VDD = 12 V, IDQ =180 mA, Pout = 1 W
f
MHz
Zsource
Ω
Zload
Ω
3500
4.3 - j16.3
5.7 - j7.0
3550
4.2 - j16.0
5.7 - j6.8
3600
4.1 - j15.8
5.7 - j6.6
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Zo = 25 Ω
load
Figure 6. Series Equivalent Source and Load Impedance
MRFG35010R1
6
RF Device Data
Freescale Semiconductor
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.50
0.956
- 177.95
5.591
79.60
0.007
15.64
0.741
179.71
0.60
0.957
- 179.86
4.668
76.30
0.007
23.81
0.739
179.15
0.70
0.956
178.44
4.007
73.21
0.008
23.84
0.736
178.75
0.80
0.956
177.05
3.520
70.18
0.008
26.09
0.736
178.29
0.90
0.954
175.83
3.138
67.20
0.009
30.55
0.735
177.85
1.00
0.955
174.61
2.842
64.30
0.010
28.91
0.735
177.42
1.10
0.954
173.42
2.604
61.65
0.009
31.64
0.734
176.95
1.20
0.952
172.29
2.402
58.87
0.011
31.90
0.735
176.52
1.30
0.952
171.25
2.236
56.13
0.011
36.06
0.735
175.97
1.40
0.950
170.02
2.098
53.34
0.011
33.99
0.736
175.52
1.50
0.950
168.36
2.054
50.41
0.011
32.65
0.725
174.86
1.60
0.948
167.24
1.944
47.63
0.012
32.47
0.725
174.31
1.70
0.946
166.01
1.850
44.77
0.013
37.07
0.725
173.70
1.80
0.944
164.67
1.769
42.06
0.014
34.40
0.725
172.90
1.90
0.943
163.59
1.698
39.29
0.015
35.71
0.725
172.32
2.00
0.942
162.31
1.638
36.53
0.015
37.47
0.724
171.58
2.10
0.940
161.09
1.580
33.69
0.016
35.82
0.724
170.75
2.20
0.938
159.66
1.532
30.84
0.017
35.69
0.722
169.89
2.30
0.937
158.30
1.491
28.03
0.017
35.43
0.721
169.04
2.40
0.935
156.86
1.454
25.19
0.019
34.19
0.720
168.15
2.50
0.934
155.35
1.422
22.38
0.020
34.10
0.718
167.32
2.60
0.932
153.83
1.396
19.54
0.021
35.51
0.718
166.38
2.70
0.928
152.26
1.375
16.68
0.022
33.15
0.716
165.61
2.80
0.926
150.58
1.356
13.80
0.023
30.84
0.714
164.67
2.90
0.923
148.97
1.342
10.91
0.025
31.00
0.711
163.77
3.00
0.920
147.18
1.332
7.87
0.027
29.11
0.708
162.89
3.10
0.917
145.27
1.328
4.88
0.028
28.98
0.704
161.96
3.20
0.913
143.23
1.326
1.73
0.030
27.36
0.699
161.08
3.30
0.908
141.12
1.329
- 1.48
0.032
25.93
0.694
160.09
3.40
0.903
138.91
1.335
- 4.80
0.034
24.33
0.687
159.09
3.50
0.897
136.46
1.346
- 8.26
0.036
22.30
0.679
158.02
3.60
0.893
133.77
1.360
- 11.89
0.039
19.80
0.670
156.93
3.70
0.884
130.86
1.375
- 15.61
0.042
17.46
0.659
155.90
3.80
0.875
127.58
1.393
- 19.50
0.045
15.22
0.648
154.96
3.90
0.866
124.06
1.417
- 23.55
0.048
13.31
0.636
154.06
4.00
0.851
120.13
1.443
- 27.75
0.052
10.27
0.626
153.16
4.10
0.833
115.98
1.472
- 32.06
0.056
7.36
0.618
152.14
4.20
0.814
111.48
1.505
- 36.63
0.060
4.18
0.609
151.13
4.30
0.793
106.69
1.541
- 41.44
0.065
1.13
0.602
149.84
4.40
0.771
101.44
1.581
- 46.57
0.071
- 3.19
0.592
148.47
4.50
0.748
95.69
1.622
- 51.82
0.076
- 7.50
0.582
147.06
4.60
0.723
89.38
1.668
- 57.33
0.082
- 11.79
0.575
145.72
4.70
0.697
82.41
1.721
- 63.32
0.089
- 16.57
0.568
144.03
4.80
0.672
74.51
1.771
- 69.70
0.096
- 22.28
0.559
142.02
4.90
0.647
65.82
1.818
- 76.56
0.103
- 28.04
0.549
139.82
5.00
0.622
56.14
1.860
- 83.67
0.110
- 33.91
0.539
137.39
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Table 4. Class A Common Source S - Parameters at VDS = 12 Vdc, IDQ = 1000 mA
MRFG35010R1
RF Device Data
Freescale Semiconductor
7
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.50
0.936
- 175.05
5.292
80.70
0.014
3.73
0.735
- 178.66
0.60
0.936
- 177.28
4.422
77.20
0.014
3.63
0.735
- 179.61
0.70
0.935
- 179.21
3.803
74.02
0.015
3.78
0.735
179.80
0.80
0.935
179.21
3.341
70.87
0.014
7.22
0.736
179.20
0.90
0.935
177.77
2.983
67.85
0.014
5.83
0.738
178.58
1.00
0.934
176.46
2.701
64.80
0.015
7.03
0.738
178.09
1.10
0.934
175.26
2.473
62.00
0.015
7.15
0.738
177.54
1.20
0.933
174.05
2.284
59.24
0.014
6.85
0.739
177.01
1.30
0.933
172.86
2.124
56.47
0.015
6.90
0.740
176.42
1.40
0.933
171.71
1.991
53.70
0.015
8.93
0.739
175.92
1.50
0.929
170.06
1.948
50.73
0.016
7.81
0.730
175.22
1.60
0.930
168.89
1.845
47.88
0.016
8.58
0.731
174.51
1.70
0.927
167.73
1.757
44.99
0.016
8.16
0.731
173.88
1.80
0.926
166.37
1.678
42.32
0.016
10.00
0.730
173.09
1.90
0.925
165.33
1.610
39.48
0.017
9.25
0.732
172.45
2.00
0.923
164.05
1.551
36.70
0.018
11.89
0.731
171.71
2.10
0.921
162.82
1.498
33.90
0.018
10.06
0.731
170.85
2.20
0.920
161.49
1.451
31.07
0.018
10.11
0.730
170.01
2.30
0.918
160.17
1.411
28.22
0.019
10.86
0.729
169.14
2.40
0.916
158.74
1.376
25.43
0.020
9.05
0.728
168.25
2.50
0.916
157.35
1.347
22.58
0.020
8.57
0.727
167.43
2.60
0.913
155.97
1.321
19.80
0.021
9.64
0.727
166.51
2.70
0.912
154.45
1.300
16.98
0.022
10.23
0.725
165.61
2.80
0.909
152.83
1.280
14.05
0.023
9.68
0.723
164.76
2.90
0.907
151.25
1.268
11.14
0.024
10.24
0.719
163.70
3.00
0.904
149.54
1.257
8.18
0.026
7.35
0.717
162.83
3.10
0.901
147.76
1.253
5.20
0.026
9.11
0.714
161.86
3.20
0.896
145.88
1.253
2.11
0.028
6.33
0.709
160.85
3.30
0.893
143.83
1.255
- 1.10
0.030
7.09
0.704
159.82
3.40
0.887
141.78
1.260
- 4.43
0.031
5.16
0.697
158.76
3.50
0.882
139.43
1.268
- 7.81
0.033
4.74
0.690
157.60
3.60
0.876
136.99
1.281
- 11.29
0.035
4.34
0.682
156.46
3.70
0.870
134.24
1.295
- 14.96
0.038
1.64
0.672
155.26
3.80
0.863
131.29
1.311
- 18.72
0.040
0.43
0.660
154.16
3.90
0.853
127.96
1.334
- 22.68
0.042
- 2.33
0.650
153.12
4.00
0.840
124.33
1.354
- 26.85
0.046
- 4.01
0.639
152.16
4.10
0.825
120.40
1.386
- 31.01
0.049
- 6.67
0.632
150.97
4.20
0.807
116.26
1.414
- 35.40
0.053
- 9.06
0.624
149.72
4.30
0.787
111.78
1.453
- 40.01
0.057
- 11.29
0.617
148.33
4.40
0.767
106.97
1.492
- 44.83
0.061
- 14.79
0.608
146.78
4.50
0.745
101.74
1.537
- 49.99
0.066
- 18.66
0.599
145.00
4.60
0.721
95.90
1.579
- 55.50
0.071
- 22.20
0.589
143.33
4.70
0.697
89.39
1.633
- 61.25
0.077
- 26.02
0.580
141.41
4.80
0.674
82.09
1.685
- 67.46
0.084
- 30.63
0.569
139.21
4.90
0.647
73.93
1.740
- 74.01
0.090
- 35.78
0.557
136.94
5.00
0.622
64.84
1.790
- 81.02
0.097
- 41.70
0.545
134.20
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Table 5. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 180 mA
MRFG35010R1
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
K
S
(INSULATOR)
1
bbb
B
(FLANGE)
T A
M
bbb
Q
bbb
M
D
T A
M
B
M
T A
M
B
M
M
N (LID)
T A
M
B
R (LID)
M
ccc
M
T A
E
ARCHIVE INFORMATION
M
2x
2x
B
M
B
3
2
ccc
M
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED .030 (0.762) AWAY
FROM PACKAGE BODY.
M
B
H
C
T
M
SEATING
PLANE
(INSULATOR)
aaa
A
M
T A
M
B
M
A
CASE 360D - 02
ISSUE C
NI - 360HF
M
F
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
.795
.805
.225
.235
.125
.176
.034
.044
.055
.065
.004
.006
.562 BSC
.077
.087
.085
.115
.355
.365
.355
.365
.125
.135
.225
.235
.225
.235
.005
.010
.015
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
MILLIMETERS
MIN
MAX
20.19
20.45
5.72
5.97
3.18
4.47
0.89
1.12
1.40
1.65
0.10
0.15
14.28 BSC
1.96
2.21
2.16
2.92
9.02
9.27
9.96
10.16
3.18
3.43
5.72
5.97
5.72
5.97
0.13
0.25
0.38
ARCHIVE INFORMATION
G
2x
MRFG35010R1
RF Device Data
Freescale Semiconductor
9
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
9
Jan. 2008
Description
• Listed replacement part, p. 1
ARCHIVE INFORMATION
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• Added Revision History, p. 10
MRFG35010R1
10
RF Device Data
Freescale Semiconductor
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MRFG35010R1
Document
Number:
RF
Device
Data MRFG35010
Rev. 9, 1/2008
Freescale
Semiconductor
11