Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0800 Features • Usable Gain to 6.0␣ GHz • High Gain: 32.5 dB Typical at 0.1␣ GHz 23.5 dB Typical at 1.0␣ GHz • Low Noise Figure: 3.0␣ dB Typical at 1.0␣ GHz Description The MSA-0800 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, “Chip Use”. Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) C block IN C block OUT MSA Vd = 7.8 V 5965-9595E 6-410 Chip Outline[1] Note: 1. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information. MSA-0800 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 750 mW +13 dBm 200°C 200°C Thermal Resistance[2,4]: θjc = 70°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface (TMS) = 25°C. 3. Derate at 14.3 mW/°C for TMounting␣ Surface > 148°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASURE- Electrical Specifications[1], TA = 25°C Symbol GP VSWR Parameters and Test Conditions[2]: Id = 36 mA, ZO = 50 Ω Power Gain (|S21| 2) f = 0.1 GHz f = 1.0 GHz f = 4.0 GHz Input VSWR f = 1.0 to 3.0 GHz Units Min. dB Typ. Max. 32.5 23.5 11.0 2.0:1 Output VSWR f = 1.0 to 3.0 GHz NF 50 Ω Noise Figure f = 1.0 GHz dB 1.9:1 3.0 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 27.0 tD Group Delay f = 1.0 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 125 7.0 7.8 8.4 –17.0 Notes: 1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current is on the following page. 2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration. Part Number Ordering Information Part Number MSA-0800-GP4 Devices Per Tray 100 6-411 MSA-0800 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 36 mA) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .65 .61 .50 .43 .38 .34 .31 .32 .33 .34 .36 .36 .35 .43 –17 –31 –54 –70 –81 –95 –110 –124 –129 –138 –146 –155 177 150 32.6 31.7 29.6 27.5 25.6 24.2 20.9 18.3 16.3 14.4 12.8 11.3 8.7 6.3 42.50 38.59 30.22 23.64 19.05 16.27 11.12 8.22 6.52 5.24 4.36 3.68 2.73 2.07 163 148 126 113 103 93 78 66 61 54 45 37 23 10 –36.9 –34.1 –31.0 –28.5 –26.7 –25.4 –23.6 –22.6 –20.7 –20.3 –19.0 –18.3 –17.2 –16.6 .014 .020 .028 .038 .046 .054 .066 .075 .092 .097 .112 .122 .138 .148 39 47 52 52 53 55 53 53 57 54 50 49 43 35 .64 .59 .49 .40 .35 .30 .23 .17 .13 .07 .07 .10 .15 .15 –20 –39 –68 –90 –106 –120 –142 –158 –162 –165 –140 –96 –75 –81 0.80 0.68 0.63 0.69 0.75 0.80 0.88 0.98 1.00 1.11 1.11 1.16 1.28 1.40 Note: 1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 35 30 30 Gain Flat to DC 0.5 GHz 20 15 1.0 GHz 13 20 12 2.0 GHz 0.1 0.3 0.5 1.0 3.0 20 30 40 I d (mA) FREQUENCY (GHz) Figure 1. Typical Power Gain vs. Frequency, Id = 36 mA. 4.5 I d = 40 mA 14 4.0 NF (dB) I d = 36 mA 10 I d = 20 mA I d = 36 mA I d = 40 mA 3.5 8 3.0 I d = 20 mA 4 0.1 2.5 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. 6-412 4 NF 3 2 –55 –25 +25 +85 +125 TEMPERATURE (°C) Figure 2. Power Gain vs. Current. 16 NF (dB) 5 10 6.0 11 10 4.0 GHz 10 0 P1 dB (dBm) GP 15 5 6 22 P1 dB 10 12 23 21 25 G p (dB) G p (dB) 25 Gp (dB) 24 0.1 GHz Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f = 1.0 GHz, Id = 36 mA. P1 dB (dBm) 35 MSA-0800 Chip Dimensions GROUND 305 µm 12 mil INPUT OPTIONAL OUTPUT[1] 394 µm 15.5 mil Unless otherwise specified, tolerances are ±13 µm / ±0.5 mils. Chip thickness is 114 µm/4.5 mil. Bond Pads are 41 µm/1.6 mil typical on each side. Note 1: Output contact is made by die attaching the backside of the die. 6-413