MSB92ASWT1G, MSB92AS1WT1G PNP Silicon General Purpose High Voltage Transistor http://onsemi.com This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Collector-Base Voltage V(BR)CBO −300 Vdc Collector-Emitter Voltage V(BR)CEO −300 Vdc Emitter-Base Voltage V(BR)EBO −5.0 Vdc IC 500 mAdc ESD HBMu16,000, MMu2,000 V Symbol Max Unit Power Dissipation (Note 1) PD 150 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 to +150 °C Rating Collector Current − Continuous Electrostatic Discharge 3 1 2 SC−70 (SOT−323) CASE 419 STYLE 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Rating 2 EMITTER Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. D3 M G G D5 M G G MSB92ASWT1G MSB92AS1WT1G 1 1 Dx M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† MSB92ASWT1G SC−70 (Pb−Free) 3000/Tape & Reel MSB92AS1WT1G SC−70 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 September, 2010 − Rev. 3 1 Publication Order Number: MSB92ASWT1/D MSB92ASWT1G, MSB92AS1WT1G ELECTRICAL CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) Characteristic V(BR)CEO −300 − Vdc Collector-Base Breakdown Voltage (IC = −100 mAdc, IE = 0) V(BR)CBO −300 − Vdc Emitter-Base Breakdown Voltage (IE = −100 mAdc, IE = 0) V(BR)EBO −5.0 − Vdc Collector-Base Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO − −0.25 mA Emitter−Base Cutoff Current (VEB = −3.0 Vdc, IB = 0) IEBO − −0.1 mA hFE1 hFE2 hFE3 120 40 25 200 − − Collector-Emitter Saturation Voltage (Note 2) (IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) − −0.5 Vdc Base−Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) VBE(sat) − −0.9 Vdc fT 50 − MHz Ccb − 6.0 pF DC Current Gain (Note 2) (VCE = −10 Vdc, IC = −1.0 mAdc) (VCE = −10 Vdc, IC = −10 mAdc) (VCE = −10 Vdc, IC = −30 mAdc) − SMALL SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 20 MHz) Collector−Base Capacitance (VCB = −20 Vdc, IE = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. http://onsemi.com 2 MSB92ASWT1G, MSB92AS1WT1G PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) c A2 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR L A1 MIN 0.80 0.00 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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