MURHS160T3 Preferred Device MEGAHERTZ™ Power Rectifier Features and Benefits • • • • Ultrafast 35 Nanosecond Recovery Times 175°C Operating Junction Temperature High Temperature Glass Passivated Junction High Voltage Capability to 600 V http://onsemi.com ULTRAFAST RECTIFIER 1.0 AMPERES 600 VOLTS Applications • Power Supplies • Inverters • Free Wheeling Diodes 2 1 Mechanical Characteristics • • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 95 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band This is a Pb−Free Device SMB CASE 403A PLASTIC MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR, TL = 145°C) IF(AV) Nonrepetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 15 A TJ, Tstg −65 to +175 °C > 400 > 8000 V Operating Junction and Storage Temperature Range ESD Ratings: Machine Model = C Human Body Model = 3B A 1.0 ALYWW UH16G G UH16 = Specific Device Code AL = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Device Package Shipping † MURHS160T3G SMB (Pb−Free) 2500 /Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 1 1 Publication Order Number: MURHS160/D MURHS160T3 THERMAL CHARACTERISTICS Symbol Value Unit Maximum Thermal Resistance, Junction−to−Lead (Note 1) Rating RqJL 24 °C/W Maximum Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 °C/W ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 3) (IF = 1.0 A, TC = 25°C) (IF = 1.0 A, TC = 125°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 125°C) IR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A) trr 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 Typ Max 1.5 1.2 2.4 1.7 0.18 5.0 20 200 25 16 35 30 Unit V mA ns TJ = 150°C 1 TJ = 125°C TJ = 25°C 0.5 1 1.5 2 2.5 3 10 TJ = 150°C 1 TJ = 125°C TJ = 25°C 0.1 0 0.5 1 1.5 2 2.5 3 3.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E−03 IR, REVERSE CURRENT (A) 0.1 0 IF, INSTANTANEOUS FORWARD CURRENT (A) 10 1.0E−04 TJ = 150°C 1.0E−05 1.0E−06 TJ = 125°C 1.0E−07 1.0E−08 TJ = 25°C 1.0E−09 1.0E−10 0 100 200 300 400 500 600 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current IR, MAXIMUM REVERSE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) MURHS160T3 1.0E−03 TJ = 150°C 1.0E−04 1.0E−05 TJ = 125°C 1.0E−06 TJ = 25°C 1.0E−07 1.0E−08 1.0E−09 1.0E−10 0 100 200 300 400 VR, REVERSE VOLTAGE (V) 500 Figure 4. Maximum Reverse Current http://onsemi.com 3 600 4 2 dc SQUARE WAVE 1 0 50 60 70 80 90 100 110 120 130 140 150 160 170 180 PFO, AVERAGE POWER DISSIPATION (W) IF, AVERAGE FORWARD CURRENT (A) MURHS160T3 10 9 8 7 6 SQUARE 5 4 DC 3 2 1 0 0 1 2 3 4 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 7. Forward Power Dissipation 5 100 C, CAPACITANCE (pF) TJ = 25°C 10 1 0 20 40 60 80 100 VR, REVERSE VOLTAGE (V) R(t), TRANSIENT THERMAL RESISTANCE Figure 6. Capacitance 100 D = 0.6 10 D = 0.2 D = 0.1 D = 0.05 1 D = 0.01 P(pk) 0.1 0.01 0.000001 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 8. Thermal Response Junction−to−Ambient http://onsemi.com 4 10 100 1000 MURHS160T3 PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE E HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 2.03 2.11 0.23 0.30 3.56 3.81 4.32 4.57 5.44 5.59 1.02 1.27 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.084 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.095 0.006 0.083 0.012 0.150 0.180 0.220 0.050 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MEGAHERTZ is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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