ETC MW5IC2030M

MOTOROLA
Freescale Semiconductor, Inc.
Order this document
by MW5IC2030M/D
SEMICONDUCTOR TECHNICAL DATA
The Wideband IC Line
Freescale Semiconductor, Inc...
RF LDMOS Wideband Integrated
Power Amplifiers
The MW5IC2030 wideband integrated circuit is designed for base station
applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC
technology and integrates a multi - stage structure. Its wideband On - Chip
design makes it usable from 1930 to 1990 MHz. The linearity performances
cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, PHS,
CDMA and W - CDMA.
Final Application
Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA,
IDQ2 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band, IS - 95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13)
Power Gain — 23 dB
Drain Efficiency — 20%
ACPR @ 885 kHz Offset — - 49 dBc @ 30 kHz Channel Bandwidth
Driver Application
Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 200 mA, IDQ2 =
550 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13)
Power Gain — 24 dB
ACPR @ 885 kHz Offset — - 64 dBc @ 30 kHz Channel Bandwidth
• On - Chip Matching (50 Ohm Input, >4 Ohm Output)
• Integrated Temperature Compensation Capability with Enable/Disable
Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Also Available in Gull Wing for Surface Mount
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW5IC2030MBR1
MW5IC2030GMBR1
1930 - 1990 MHz, 30 W, 26 V
GSM/GSM EDGE, W - CDMA, PHS
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW5IC2030MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW5IC2030GMBR1
PIN CONNECTIONS
VDS1
GND
VDS1
VRD2
VRG2
GND
1
2
3
4
5
16
15
GND
NC
RFin
6
14
VDS2/
RFout
VRD1
VRG1/VGS1
VGS2
NC
GND
7
8
9
10
11
13
12
NC
GND
VRD2
VRG2
RFin
VDS2/RFout
VRD1
VRG1/VGS1
VGS2
Quiescent Current
Temperature Compensation
Functional Block Diagram
(Top View)
NOTE: Exposed backside flag is source
terminal for transistors.
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 2
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
MW5IC2030MBR1 MW5IC2030GMBR1
1
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Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
200
°C
Input Power
Pin
20
dBm
Symbol
Value (1)
Unit
THERMAL CHARACTERISTICS
Characteristic
Freescale Semiconductor, Inc...
Thermal Resistance, Junction to Case
RθJC
°C/W
CDMA Application
(Pout = 5 W CW)
Stage 1, 27 Vdc, IDQ = 160 mA
Stage 2, 27 Vdc, IDQ = 230 mA
4.89
1.75
PHS Application
(Pout = 12.6 W CW)
Stage 1, 26 Vdc, IDQ = 300 mA
Stage 2, 26 Vdc, IDQ = 1300 mA
4.85
1.61
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1B (Minimum)
Machine Model
A (Minimum)
Charge Device Model
3 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22 - A113
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
CDMA FUNCTIONAL TESTS (In Motorola 1.9 GHz Test Fixture, 50 οhm system) VDD = 27 Vdc, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout =
5 W Avg., 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@ ± 885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01 Probability on CCDF.
Power Gain
Gps
21.5
23
—
dB
Drain Efficiency
ηD
18
20
—
%
IRL
—
- 18
- 10
dB
ACPR
—
—
- 47
dBc
Input Return Loss
Adjacent Channel Power Ratio
Stability
(0 dBm<Pout<43 dBm CW; 3:1 VSWR)
Gain Flatness in 30 MHz BW, 1930 - 1990 MHz
No Spurious > - 60 dBc
GF
—
0.2
0.3
dB
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
(continued)
MW5IC2030MBR1 MW5IC2030GMBR1
MOTOROLA RF DEVICE DATA
For More Information On This Product,
2
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Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS - (continued) (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
TYPICAL PERFORMANCES (In Motorola Test Fixture) VDD = 26 Vdc, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 W, f = 1960 MHz
Pout @ 1 dB Compression Point, CW
P1dB
—
30
—
W
Φ
—
±1
—
°
Delay
—
2.25
—
ns
Part to Part Phase Variation
∆Φ
—
±10
—
°
Part to Part Gain Variation (Per Lot or Reel)
∆G
—
±1.5
—
dB
—
10
—
%
Deviation from Linear Phase in 30 MHz BW
(Characterized from 1930 - 1990 MHz)
Delay
Reference FET to RF FET Scaling Ratio Delta (Stages 1 and 2)
Freescale Semiconductor, Inc...
TYPICAL PHS PERFORMANCES (In Motorola Test Fixture, 50 οhm system) VDD = 26 Vdc, IDQ1 = 260 mA, IDQ2 = 1100 mA, Pout = 12.6 W,
1.9 GHz, PHS Signal Mask
Power Gain
Gps
—
Power Added Efficiency
PAE
Input Return Loss
IRL
ACPR
Adjacent Channel Power Ratio
(600 kHz Offset in 192 kHz BW)
MOTOROLA RF DEVICE DATA
24
—
dB
—
25
—
%
—
- 15
—
dB
—
- 72
—
dBc
MW5IC2030MBR1 MW5IC2030GMBR1
3
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Freescale Semiconductor, Inc.
Z10
VD1
+
C19
C9
C6
VRD2
C12
1
16
2
NC 15
Z9
3
VBIAS R2
R3
R6
RF
INPUT
C5
4
C13
+
VD2
C20
Z8
RF
OUTPUT
5
Z1
Z3
Z2
6
C1
VRG1/VGS1
VBIAS1
C11
R4
C15
+
C2 C3
Z6
VBIAS2
C10
Z1
Z2
Z3
Z4
Z5
Z6
+
Quiescent Current
Temperature
Compensation
8
9
C18
Z11
R2
Z5
7
C14
R1
Z4
14
C7
VRD1
Freescale Semiconductor, Inc...
C8
NC 10 NC
NC 13
11
R5
C16
0.465″
0.518″
0.282″
0.221″
0.489″
0.471″
x 0.041″ Microstrip
x 0.041″ Microstrip
x 0.235″ Microstrip
x 0.081″ Microstrip
x 0.041″ Microstrip
x 0.025″ Microstrip
C4
Z7
12
C17
Z7
Z8
Z9
Z10
Z11
PCB
0.200″ x 0.025″ Microstrip
0.274″ x 0.050″ Microstrip
0.615″ x 0.050″ Microstrip
0.450″ x 0.025″ Microstrip
0.340″ x 0.014″ Microstrip
Rogers 4350, 0.020″, εr = 3.5
Figure 1. MW5IC2030MBR1(GMBR1) Test Circuit Schematic
Table 1. MW5IC2030MBR1(GMBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1.8 pF High Q Chip Capacitor (0603)
600S1R8AT - 250 - T
ATC
C2
1.5 pF High Q Chip Capacitor (0603)
600S1R5AT - 250 - T
ATC
C3
3.9 pF High Q Chip Capacitor (0603)
600S3R9AT - 250 - T
ATC
C4
6.8 pF High Q Chip Capacitor (0805)
600S6R8AT - 250 - T
ATC
C5, C6
100 pF Class 1 NPO Chip Capacitors (0805)
GRM215CB1H101CZ01D
Murata
C7
4.7 pF Class 1 NPO Chip Capacitor (0805)
GRM215CB1H4R7CZ01D
Murata
C8, C9, C10, C11
0.1 µF X7R Chip Capacitors (1206)
C1206C104K5RACT
Kemet
C12, C13, C14, C15, C16
0.01 µF Class 2 X7R Chip Capacitors (0805)
C0805C103K5RACT
Kemet
C17, C18
22 µF, 35 V Electrolytic Capacitors
ECE - 1AVKS220
Panasonic
C19, C20
330 µF, 50 V Electrolytic Capacitors
ECA - 1HM331
Panasonic
R1, R3
1 kW, 5% Chip Resistors (0805)
RK73B2ALTD102J
KOA Speer
R2
499 W, 1% Chip Resistor (0805)
RK73H2ATD4990F
KOA Speer
R4, R5, R6
100 kW, 5% Chip Resistors (0805)
RK73B2ALTD104J
KOA Speer
MW5IC2030MBR1 MW5IC2030GMBR1
MOTOROLA RF DEVICE DATA
For More Information On This Product,
4
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Freescale Semiconductor, Inc.
RD2
C19
VD1
VD2
MW5IC2030M
Rev 3
C20
RG2
C9
R3
C8
C6
C12
C5
C13
C3
C7
CUTOUT AREA
Freescale Semiconductor, Inc...
R6
C17
C18
C2
C1
C15
C16
C14
C4
R5
R4
C10
RD1
R2
C11
R1
VG2
VD1
VG1RG1
Figure 2. MW5IC2030MBR1(GMBR1) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MW5IC2030MBR1 MW5IC2030GMBR1
5
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Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
30
29
21
VDD = 27 Vdc, Pout = 10 W (Avg.)
IDQ1 = 160 mA, IDQ2 = 230 mA
100 kHz Tone Spacing
28
ηD
−26
IRL
20
−28
−30
19
−32
−34
18
1880
IMD
1900
1920
1940
1960
1980
2000
2020
−36
2040
−16
−16
−17
−18
−19
−20
−21
IRL, INPUT RETURN LOSS (dB)
22
G ps , POWER GAIN (dB)
31
Gps
η, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
32
η, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
23
Figure 3. Two - Tone Broadband Performance
9
Gps
ηD
23
G ps , POWER GAIN (dB)
8
7
6
VDD = 27 Vdc, Pout = 1 W (Avg.)
IDQ1 = 160 mA, IDQ2 = 230 mA
100 kHz Tone Spacing
22
5
−46
21
−47
IRL
−48
20
−49
IMD
−50
19
1880
1900
1920
1940
1960
1980
2000
2020
−51
2040
−17
−18
−19
−20
−21
IRL, INPUT RETURN LOSS (dB)
24
f, FREQUENCY (MHz)
Figure 4. Two - Tone Broadband Performance
IDQ1 = 200 mA
IDQ2 = 300 mA
25
24
IMD, INTERMODULATION DISTORTION (dBc)
26
G ps , POWER GAIN (dB)
Freescale Semiconductor, Inc...
f, FREQUENCY (MHz)
IDQ1 = 160 mA
IDQ2 = 230 mA
23
IDQ1 = 120 mA
IDQ2 = 175 mA
22
21
VDD = 27 Vdc
Center Frequency = 1960 MHz
100 kHz Tone Spacing
20
19
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
−75
−80
0.1
VDD = 27 Vdc
IDQ1 = 160 mA, IDQ2 = 230 mA
f = 1960 MHz, 100 kHz Tone Spacing
3rd Order
5th Order
7th Order
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
MW5IC2030MBR1 MW5IC2030GMBR1
MOTOROLA RF DEVICE DATA
For More Information On This Product,
6
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Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
50
VDD = 27 Vdc, Pout = 30 W (PEP)
IDQ1 = 160 mA, IDQ2 = 230 mA
Two−Tone Measurements, Center Frequency = 1960 MHz
−30
3rd Order
−35
5th Order
−40
−45
−50
7th Order
−55
P3dB = 44.91 dBm (31 W)
48
P1dB = 44.69 dBm (29.5 W)
47
46
45
44
−30_C
43
Actual
25_C
42
41
40
39
−60
0.1
1
10
100
15
16
17
18
21
−35
15
−40
IM3
−45
ACPR
5
−50
0
−55
32
33
34
35
36
37
25
26 27
−30_C
Gps
TC = −30_C
23
38
39
40
30
22
25
21
20
20
ηD
41
0
1
10
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (WATTS)
Figure 10. Power Gain and Power Added
Efficiency versus Output Power
40
30
VDD = 12 V
19
24 V
28 V
S21 (dB)
20
32 V
5
0
0
−5
S21
23
21
10
100
Figure 9. 2 - Carrier W - CDMA IM3, Power Gain,
and Efficiency versus Output Power
22
15
VDD = 27 Vdc
IDQ1 = 160 mA
IDQ2 = 230 mA
f = 1960 MHz
17
24
35
85_C
19
25
40
85_C
25_C
24
45
25_C
18
31
24
25
G ps , POWER GAIN (dB)
20
30
23
50
26
−30
Gps
29
22
27
IM3 (dBc), ACPR (dBc)
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
−25
10
20
Figure 8. Pulse CW Output Power versus
Input Power
30
ηD
19
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
G ps , POWER GAIN (dB)
Freescale Semiconductor, Inc...
TWO−TONE SPACING (MHz)
25
VDD = 27 Vdc
IDQ1 = 160 mA, IDQ2 = 230 mA
Center Frequency = 1960 MHz
85_C
η, DRAIN EFFICIENCY (%)
−25
Ideal
49
20
−10
10
−15
0
−20
S11
18
VDD = 27 Vdc
IDQ1 = 160 mA, IDQ2 = 230 mA
Center Frequency = 1960 MHz
Two−Tone Measurement, 100 kHz Spacing
17
16
15
0
20
40
60
−10
−25
−20
−30
−30
1000
1500
2000
2500
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
Figure 11. Power Gain versus Output Power
Figure 12. Broadband Frequency Response
MOTOROLA RF DEVICE DATA
−35
3000
MW5IC2030MBR1 MW5IC2030GMBR1
7
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S11 (dB)
−20
Pout , OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
−15
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
25
25_C
24
23
85_C
22
21
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
1930
1940
1950
1960
1970
1980
1990
2000
−60
4
20
TC = −30_C
2
10
Source EVM = 0.60%
0
10
Figure 14. EVM and Drain Efficiency versus
Output Power
TC = −30_C
85_C
25_C
SR @ 400 kHz
−70
25_C
−75
−30_C
85_C
SR @ 600 kHz
−85
0
10
100
Figure 15. Spectral Regrowth at 400 kHz and 600 kHz
versus Output Power
−40
−45
−50
VDD = 27 Vdc
IDQ1 = 160 mA, IDQ2 = 230 mA
f = 1960 MHz, 9−Channel IS−95 CDMA
−55
−60
ACPR
−65
−70
ALT2
−75
ALT1
−80
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Pout, IS−95 OUTPUT POWER (dBm)
Figure 16. IS - 95 Spectral Regrowth versus
Output Power
1.E+09
−20
_
−30
TC = −30_C
25_C
−40
85_C
−50
−60
0
1
10
100
MTTF FACTOR (HOURS X AMPS2)
−10
0
100
Figure 13. Power Gain versus Frequency
−65
−80
25_C
Pout, OUTPUT POWER (WATTS)
VDD = 27 Vdc
IDQ1 = 160 mA
IDQ2 = 230 mA
EDGE Modulation
f = 1960 MHz
−55
30
f, FREQUENCY (MHz)
−45
−50
85_C
1
Pout, OUTPUT POWER (WATTS)
INSERTION PHASE ( )
Freescale Semiconductor, Inc...
20
1920
VDD = 27 Vdc, Pout = 5 W (CW)
IDQ1 = 160 mA, IDQ2 = 230 mA
Two−Tone Measurements, Center Frequency = 1960 MHz
6
40
ηD
VDD = 27 Vdc
IDQ1 = 160 mA
IDQ2 = 230 mA
f = 1960 MHz
η, DRAIN EFFICIENCY (%)
TC = −30_C
8
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT 1 & 2, ALTERNATE 1 & 2 CHANNEL POWER RATIO (dBc)
G ps , POWER GAIN (dB)
26
EVM, ERROR VECTOR MAGNITUDE (% rms)
27
2nd Stage
1.E+08
1.E+07
1st Stage
1.E+06
90
100
110
120
130
140
150
160
170
180 190
TJ, JUNCTION TEMPERATURE (°C)
Pout, OUTPUT POWER (WATTS) CW
Figure 17. Insertion Phase versus Output Power
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 18. MTTF Factor versus Junction Temperature
MW5IC2030MBR1 MW5IC2030GMBR1
MOTOROLA RF DEVICE DATA
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f = 1800 MHz
Zload*
f = 1800 MHz
f = 2200 MHz
f = 2200 MHz
Zin
Freescale Semiconductor, Inc...
Zo = 50 Ω
VDD = 27 V, IDQ1 = 160 mA, IDQ2 = 230 mA
Zin
f
MHz
Zin
Ω
Zload
Ω
1800
49.7 - j9.3
6.9 - j0.3
1850
47.7 - j9.8
6.9 - j0.3
1930
44.8 - j8.5
6.7 - j0.1
1960
44.0 - j7.3
6.6 - j0.0
1990
44.6 - j5.6
6.6 + j0.1
2050
45.7 - j8.6
6.4 + j0.4
2100
42.5 - j8.3
6.2 + j0.8
2150
40.6 - j6.8
6.1 + j1.1
2200
39.3 - j5.0
6.0 + j1.6
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 19. Series Equivalent Input and Load Impedance
MOTOROLA RF DEVICE DATA
MW5IC2030MBR1 MW5IC2030GMBR1
9
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Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
r1
C A B
2X
E1
B
aaa
A
NOTE 6
M
PIN ONE
INDEX
4X
aaa
M
b1
C A
6X
e1
4X
e2
2X
e3
e
Freescale Semiconductor, Inc...
D1
aaa
b3
aaa M C A
b2
C A
D M
M
10X
b
aaa
M
C A
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
N
E
VIEW Y - Y
DATUM
PLANE
H
A
c1
C
SEATING
PLANE
F
Y
ZONE "J"
E2
Y
A1
7 A2
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1"
DO INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE .005 (0.13)
TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3"
DIMENSIONS AT MAXIMUM MATERIAL CONDITION.
6. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SLUG.
7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
CASE 1329 - 09
ISSUE J
TO - 272 WB - 16
PLASTIC
MW5IC2030MBR1
DIM
A
A1
A2
D
D1
E
E1
E2
F
M
N
b
b1
b2
b3
c1
e
e1
e2
e3
r1
aaa
INCHES
MIN
MAX
.100
.104
.038
.044
.040
.042
.928
.932
.810 BSC
.551
.559
.353
.357
.346
.350
.025 BSC
.600
−−−
.270
−−−
.011
.017
.037
.043
.037
.043
.225
.231
.007
.011
.054 BSC
.040 BSC
.224 BSC
.150 BSC
.063
.068
.004
MILLIMETERS
MIN
MAX
2.54
2.64
0.96
1.12
1.02
1.07
23.57
23.67
20.57 BSC
14.00
14.20
8.97
9.07
8.79
8.89
0.64 BSC
15.24
−−−
6.86
−−−
0.28
0.43
0.94
1.09
0.94
1.09
5.72
5.87
.18
.28
1.37 BSC
1.02 BSC
5.69 BSC
3.81 BSC
1.6
1.73
.10
MW5IC2030MBR1 MW5IC2030GMBR1
MOTOROLA RF DEVICE DATA
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E1
r1
aaa M C A B
2X
A
B
4X
PIN ONE
INDEX
aaa
M
b1
C A
6X
e1
4X
e2
2X
e3
b3
aaa M C A
e
D1
Freescale Semiconductor, Inc...
aaa
M
D
M
b2
C A
b
C A
10X
aaa
M
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
ÉÉÉÉÉÉ
NOTE 6
N
E2
VIEW Y - Y
E
DETAIL Y
DATUM
PLANE
H
A2
A
c1
E2
Y
Y
L1
t
L
GAGE
PLANE
A1
DETAIL Y
C
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
M
N
b
b1
b2
b3
c1
e
e1
e2
e3
r1
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aaa
SEATING
PLANE
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1"
DO INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE .005 (0.13)
TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3"
DIMENSIONS AT MAXIMUM MATERIAL CONDITION.
6. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SINK.
INCHES
MIN
MAX
.100
.104
.001
.004
.099
.110
.928
.932
.810 BSC
.429
.437
.353
.357
.346
.350
.018
.024
.01 BSC
.600
−−−
.270
−−−
.011
.017
.037
.043
.037
.043
.225
.231
.007
.011
.054 BSC
.040 BSC
.224 BSC
.150 BSC
.063
.068
2°
8°
.004
MILLIMETERS
MIN
MAX
2.54
2.64
0.02
0.10
2.51
2.79
23.57
23.67
20.57 BSC
10.90
11.10
8.97
9.07
8.79
8.89
4.90
5.06
0.25 BSC
15.24
−−−
6.86
−−−
0.28
0.43
0.94
1.09
0.94
1.09
5.72
5.87
.18
.28
1.37 BSC
1.02 BSC
5.69 BSC
3.81 BSC
1.6
1.73
2°
8°
.10
CASE 1329A - 03
ISSUE B
TO - 272 WB - 16 GULL
PLASTIC
MW5IC2030GMBR1
MOTOROLA RF DEVICE DATA
MW5IC2030MBR1 MW5IC2030GMBR1
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HOME PAGE: http://motorola.com/semiconductors
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MOTOROLA RF DEVICE DATA
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