RoHS RoHS N-60EPU06 Series SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 60 A FEATURES N-60APU06 N-60EPU06 Ultrafast recovery 175 °C operating junction temperature Designed and qualified for industrial level - BENEFITS Cathode to base Reduced RFI and EMI Cathode to base 2 Higher frequency operation 2 Reduced snubbing Reduced parts count 1 Cathode DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. 3 Anode 3 Anode 1 Anode TO-247AC modified TO-247AB PRODUCT SUMMARY trr 34 ns IF(AV) 60 A VR 600 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VR Continuous forward current VALUES UNITS 600 V IF(AV) TC = 116 °C 60 Single pulse forward current IFSM TC = 25 °C 600 Maximum repetitive forward current IFRM Square wave, 20 kHz 120 Operating junction and storage temperatures ELECTRICAL SPECIFICATIONS PARAMETER Breakdown voltage, blocking voltage Forward voltage VF Reverse leakage current IR Junction capacitance CT - 55 to 175 TJ, TStg °C (TJ = 25 ºC unless otherwise specified) SYMBOL VBR, Vr A TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 60 A - 1.50 1.75 IF = 60 A, TJ = 125 ºC - 1.30 1.55 IR= 100 µA IF = 60 A, TJ = 175 ºC - 1.20 1.40 VR= VR rated - - 50 TJ = 150 ºC, V R = VR rated - - 500 VR= 600 V - 39 - Page 1 of 6 UNITS V µA pF N-60EPU06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products DYNAMIC RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time SYMBOL trr (TJ = 25 ºC unless otherwise specified) TEST CONDITIONS MIN. TYP. MAX. I F = 0.5A, I R = 1A, I RR =0.25A (RG#1 CKT) - 38 45 I F = 1A, dI F /dt = 200 A/µs, V R =30V - 30 45 T J = 25°C - 81 - - 164 - - 7.4 - - 17 - T J = 25°C - 300 - T J = 125°C - 1394 - MIN. TYP. MAX. - - 0.63 - 0.2 - - 5.5 - - 0.2 - oz. - 2.4 (20) N⋅ m (lbf . in) T J = 125°C Peak recovery current lRRM Reverse recovery charge Qrr IF = 60 A dIF/dt = 200 A/µs VR = 200 V T J = 25°C T J = 125°C UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, case to heatsink RthCS TEST CONDITIONS °C/W Mounting surface, flat, smooth and greased Weight 1.2 (10) Mounting torque Marking device UNITS Case style TO-247AC modified 60EPU06 Case style TO-247AC 60APU06 Page 2 of 6 g N-60EPU06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 Typical values of reverse current vs. reverse voltage 1000 Reverse current-l R (µA) 1000 100 T j =175° T j =125° T j =25° 10 1 100 T j =175° 10 T j =125° 1 0.1 T j =25° 0.01 0.001 0 0.5 1 1.5 3 2.5 2 0 100 Forward voltage drop-V F (A) 200 300 400 Reverse voltage-V R (V) Fig.3 Typical junction capacitance vs. reverse voltage Junction Capactiance(pF) 1000 100 T j =25° 10 0 100 200 300 400 500 600 Reverse voltage-V R (V) Fig4. Maximum thermal impedance Z thJC characteristics 1 Thermal impedance-Z thJC (°C/W) lnstantaneous forward current-I F (A) Fig.1 Typical forward voltage drop characteristics 0.7 0.5 0.3 0.1 0.1 0.05 Tj t1 t2 Ri (°C/W) Ti (s) 0.06226 0.32503 0.24271 0.00049 0.01294 0.24310 Notes: 1. Duty factor D=t on /period 2. Peak T J =P DM xZ thJC +T c t3 Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 Rectangular pulse duration-t on (s) Page 3 of 6 1 10 100 500 600 N-60EPU06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.6 Forward Power Loss Characteristics 180 140 150 120 Average Power Loss (Watts) Allowable Case Temperature (°C) Fig.5 Max. Allowable Case Temperature Vs. Average Forward Current DC 120 90 Square Wave (D=0.50) 80% Rated Vr applied 60 30 RMS Limit 100 80 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 60 40 20 see note (3) 0 0 0 20 40 60 80 0 100 Average Forward Current IF(AV) (A) 40 60 80 100 Average Forward Current IF(AV) (A) Fig.7 Typical Stored Charge vs. dI F /dt Fig.8 Typical Reverse Recovery Time vs. dI F /dt 300 3000 T j =125°C T j =25°C T j =125°C T j =25°C 2500 250 I F = 30A I F = 60A I F = 30A 2000 I F = 60A 200 trr (ns) Qrr (nC) 20 1500 150 1000 100 500 50 0 0 100 1000 10 100 dIF/dt (A/µs) dIF/dt (A/µs) Ordering Information Tabel Device code N - 1 60 E P U 2 3 4 5 1 - Nell 2 - Current rating 3 - Single Diode 4 - TO-247AC (Modified) 5 - Ultrafast Recovery 6 - Voltage Rating (06 = 600 V) 06 (60 = 60A) Page 4 of 6 E = 2 pins A = 3 pins 1000 N-60EPU06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.9 Reverse recovery parameter test circuit Fig.10 Reverse recovery waveform and definitions Page 5 of 6 N-60EPU06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Outine Table N-60EPU06 Outine Table N-60APU06 Page 6 of 6