RoHS RoHS N-30EPU06 Series SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 30 A FEATURES N-30APU06 N-30EPU06 Ultrafast recovery 175 °C operating junction temperature Designed and qualified for industrial level - BENEFITS Cathode to base Reduced RFI and EMI Cathode to base 2 Higher frequency operation 2 Reduced snubbing Reduced parts count 1 Cathode DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. 3 Anode 3 Anode 1 Anode TO-247AC modified TO-247AB PRODUCT SUMMARY trr 30 ns IF(AV) 30 A VR 600 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VR Cathode to anode voltage VALUES UNITS 600 V Continuous forward current lF(AV) TC = 116 °C 30 Single pulse forward current lFSM TC = 25 °C 300 T j , T Stg Operating junction and storage temperatures ELECTRICAL SPECIFICATIONS PARAMETER Breakdown voltage, blocking voltage Forward voltage Reverse leakage current Junction capacitance VF lR CT - 55 to 175 °C (TJ = 25 ºC unless otherwise specified) SYMBOL V BR, Vr A TEST CONDITIONS MIN. TYP. MAX. 600 - - l F = 30A - 1.40 1.80 l F = 60A - 1.70 2.0 l F = 30A, T J = 125°C - 1.1 1.35 V R = V R rated - - 25 T J = 150°C, V R = V R rated - - 500 V R = 200V - 35 - l R = 100µA Page 1 of 6 UNITS V µA pF N-30EPU06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products DYNAMIC RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time SYMBOL trr (TJ = 25 ºC unless otherwise specified) TEST CONDITIONS TYP. MAX. I F = 0.5A, I R = 1A, I RR =0.25A (RG#1 CKT) - 30 35 I F = 1A, dI F /dt = -100 A/µs, V R =30V, T J =25°C - 23 - T J = 25°C - 30 - - 75 - T J = 125°C Peak recovery current lRRM Reverse recovery charge Qrr IF = 30 A dIF/dt = -200 A/µs VR = 400 V MIN. UNITS ns - 3 - - 6 - T J = 25°C - 55 - T J = 125°C - 485 - MIN. TYP. MAX. - 0.5 0.8 - 0.4 - - 5.5 - - 0.2 - oz. - 1.2 (10) N⋅ m (lbf . in) T J = 25°C T J = 125°C A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, case to heatsink RthCS TEST CONDITIONS Mounting surface, flat, smooth and greased Weight Marking device °C/W 0.6 (5) Mounting torque Case style TO-247AC modified 30EPU06 Case style TO-247AC 30APU06 Page 2 of 6 UNITS g RoHS RoHS N-30EPU06 Series SEMICONDUCTOR Nell High Power Products Fig.2 Typical values of reverse current vs. reverse voltage 1000 1000 100 T j =175° T j =125° T j =25° 10 100 Reverse current-l R (µA) lnstantaneous forward current-I F (A) Fig.1 Typical forward voltage drop characteristics T j =175° T j =150° 10 T j =125° T j =100° 1 0.1 T j =25° 0.01 0.001 1 0.0001 0 0.5 1.5 1 2 2.5 3 3.5 0 100 Forward voltage drop-V F (V) 300 200 400 500 600 Reverse voltage-V R (V) Fig.3 Typical junction capacitance vs. reverse voltage Fig.4 Junction capacitance vs. reverse voltage 200 180 100 T j =25° 160 140 120 (pF) Junction capacitance, C J Junction Capactiance-C T (pF) 1000 100 80 60 40 20 10 0 0 100 200 300 400 500 600 1 10 100 200 Reverse voltage (V), V R Reverse voltage-V R (V) Fig.5 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.80 D = 0.9 0.70 0.60 0.7 0.50 Note: 0.5 0.40 0.30 PDM Thermal impedance(°C/W), Z θJC 0.90 0.3 t2 0.20 Duty Factor D =t 1 /t 2 SINGLE PULSE 0.1 0.10 t1 Peak T J = PDM xZ θ JC +T C 0.05 0 10-5 10-4 10-3 10-2 Rectangular pulse duration (seconds) Page 3 of 6 10-1 1.0 N-30EPU06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.6 Max. allowable case temperature Vs. average forward current Fig.7 Reverse recovery time vs. current rate of change 200 160 DC 140 Square wave (D = 0.5) Rated VR applied 120 100 160 10 30A 120 100 15A 80 60 40 20 80 5 15 20 25 30 35 45 40 0 0 Average forward current IF(AV) (A) 400 600 800 1000 1200 Fig.9 Reverse recovery charge vs. current rate of change 1200 60 T J = 125°C Duty cycle = 0.5 V R = 400V 50 40 30 20 10 1000 60A 800 30A (nC) Reverse recovery charge, Q rr T J =175°C l F(AV) (A) 200 Current rate of change(A/μs), -di F /dt Fig.8 Maximum average forward current vs. case temperature 0 V R = 400V 140 See note (1) 0 T J = 125°C 60A 180 Reverse recovery time, t rr (ns) Allowable case temperature (°C) 180 600 15A 400 200 0 25 50 75 100 125 150 0 175 200 400 600 800 1000 Current rate of change (A/μs), -di F /dt Case temperature (°C) Ordering Information Tabel Device code N - 1 30 E P U 2 3 4 5 1 - Nell 2 - Current rating 3 - Single Diode 4 - TO-247AC (Modified) 5 - Ultrafast Recovery 6 - Voltage Rating (06 = 600 V) Page 4 of 6 06 (30 = 30A) E = 2 pins A = 3 pins 1200 N-30EPU06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.9 Reverse recovery parameter test circuit Fig.10 Reverse recovery waveform and definitions Page 5 of 6 N-30EPU06 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Outine Table N-30EPU06 Outine Table N-30APU06 Page 6 of 6