RoHS RoHS HFA30PA60C SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode 2 x 15 A / 600V FEATURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Designed and qualified for industrial level Planar FRED Chip TO-247 AB BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count common cathode 2 DESCRIPTION HFA30PA60C is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600V and 15A per leg continuous current, the HFA30PA60C is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to “snap-off” during the t b portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED HFA30PA60C is ideally suited for applications in power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 1 Anode 1 2 Common cathode 3 Anode 2 PRODUCT SUMMARY VR 600 V VF at 15A at 25 °C 1.6 V IF(AV) 2 x 15 A trr (typical) 21 ns TJ (maximum) 150 °C Qrr (typical) 80 nC dI(rec)M/dt (typical) 160 A/µs IRRM (typical) 4.0 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current VR per leg per device IF Single pulse forward current IFSM Maximum repetitive forward current IFRM Maximum power dissipation Operating junction and storage temperature range www.nellsemi.com TEST CONDITIONS PD TJ, TStg Page 1 of 6 VALUES UNITS 600 V 15 Tc = 100 ºC 30 150 A 60 Tc = 25 ºC 74 Tc = 100 ºC 29 - 55 to + 150 W ºC RoHS RoHS HFA30PA60C SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER (TJ = 25 ºC unless otherwise specified) SYMBOL TEST CONDITIONS MIN. TYP. MAX. 600 - - Cathode to anode breakdown voltage VBR IR = 100 µA IF = 15 A - 1.35 1.60 Maximum forward voltage VFM IF = 30 A - 1.60 1.90 IF = 15 A, TJ = 125 ºC - 1.20 1.50 V R = V R rated - 1.0 T J = 125°C, V R = V R rated - 400 10 1000 UNITS V Maximum reverse leakage current IRM Junction capacitance CT V R = 200V - 33 50 pF Series inductance LS Measured lead to lead 5 mm from package body - 12 - nH UNITS DYNAMIC RECOVERY CHARACTERISTICS PERLEG PARAMETER SYMBOL Reverse recovery time Peak recovery current Reverse recovery charge Peak rate of fall of recovery current during tb (TJ = 25 ºC unless otherwise specified) TEST CONDITIONS MIN. TYP. MAX. I F = 0.5A, I R = 1.0A, I RR = 0.25A (RG#1 CKT) - 26 32 IF = 1.0 A, dIF/dt = 200 A/µs, VR =30 V, TJ = 25°C - 21 - trr1 TJ = 25 ºC - 42 60 trr2 TJ = 125 ºC - 70 120 IRRM1 TJ = 25 ºC trr ns - 4.0 6.0 - 6.5 10 - 80 180 - 220 600 TJ = 25 ºC - 250 - TJ = 125 ºC - 160 - IRRM2 TJ = 125 ºC Qrr1 TJ = 25 ºC Qrr2 TJ = 125 ºC dl(rec)M/dt1 dl(rec)M/dt2 µA IF= 15A dIF/dt = 200 A/µs VR = 200 V A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PER LEG PARAMETER Lead temperature Junction to case, single leg conduction Junction to case, both legs conducting SYMBOL Tlead TEST CONDITIONS 0.063'' from case (1.6 mm) for 10 s MIN. TYP. MAX. - - 300 - - 1.7 - - 0.85 UNITS °C RthJC K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6.0 - g - 0.21 - oz. 6.0 (5.0) - 12 (10) kgf . cm (lbf . in) Weight Mounting torque Marking device www.nellsemi.com Case style TO-247AB (JEDEC) Page 2 of 6 HFA30PA60C HFA30PA60C SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 Typical reverse current vs. reverse voltage (per leg) Fig.1 Maximum forward voltage drop vs. lnstantaneous forward current (per leg) 10000 reverse current, l R (μA) TJJ= 150 ºC TJ = 125 ºC TJ = 150 ºC 1000 100 TJ = 125 ºC 10 1 TJ=25°C 0.1 0.01 0 100 200 300 400 500 600 TJJ = 25 ºC 10 Reverse voltage, V R (V) Fig.3 Typical junction capacitance vs. reverse voltage (per leg) 1 1.0 1.2 1.6 1.4 1.8 2.0 2.2 Junction capacitance, C T (pF) lnstantaneous forward current, l F (A) 100 2.4 Forward voltage drop, V FM (V) 100 10 0 100 200 300 400 Reverse voltage, V R (V) Fig.4 Maximum thermal lmpedance Z thJC characteristics (per leg) 1 D = 0.50 0.20 Note: 0.10 PDM Thermal response (Z thJC ) 10 0.05 0.1 0.02 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) Duty Factor D =t 1 /t 2 Peak T J = PDM xZ θ JC +T C 0.01 0.00001 0.0001 0.001 0.01 Rectangular pulse duration (sec), t 1 www.nellsemi.com Page 3 of 6 0.1 1 500 600 HFA30PA60C SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.5 Typical reverse recovery time vs. dl F /dt (per leg) Fig.7 Typical stored charge vs. dl F /dt (Per Leg) 800 100 V R = 200V T J = 125°C T J = 25°C l F = 30A l F = 15A l F = 5.0A 80 600 l F = 30A l F = 15A l F = 5.0A t rr (ns) Q rr (nC) 60 400 40 200 20 V R = 200V T J = 125°C T J = 25°C 0 100 0 100 1000 1000 dl F /dt (A/s) dl F /dt (A/s) Fig.8 Typical dl (rec)M /dt vs. dl F /dt (per leg) Fig.6 Typical recovery current vs. dl F /dt (per leg) 10000 25 V R = 200V T J = 125°C T J = 25°C V R = 200V T J = 125°C T J = 25°C 20 dl (rec)M /dt(A/µs) l F = 30A l F = 15A l F = 5.0A l rr (A) 15 10 l F = 30A l F = 15A l F = 5.0A 1000 5 0 100 100 100 1000 dl F /dt, (A/s) www.nellsemi.com 1000 dl F /dt, (A/s) Page 4 of 6 HFA30PA60C SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.9 Reverse recovery parameter test circuit VR = 200 V 0.01 Ω L = 70 焙 D.U.T. dIF/dt adjust D IRFP250 G S Fig.10 Reverse recovery waveform and definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 IRRM (1) dIF/dt (4) Q rr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 RRM I extrapolated to zero current. www.nellsemi.com Qrr = t rr x l RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Page 5 of 6 HFA30PA60C SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION TABLE Device code HFA 30 PA 60 C 1 2 3 4 5 1 - FRED family 2 - Current rating (30 = 30 A, 15A x 2) 3 - Package outline (PA = TO-247, 3 pins) 4 - Voltage rating (60 = 600 V) 5 - Configuration (C = Center tap common cathode) 3 pins 4.69 (0.185) 5.31 (0.209) 15.49 (0.610) 1.49 (0.059) 2.49 (0.098) 16.26 (0.640) 5.38 (0.212) 16.15 (0.242) 6.20 (0.244) CATHODE TO BASE 20.80 (0.819) 21.46 (0.845) 2 3.55 (0.138) 3.81 (0.150) 1 2 2.87 (0.113) 4.50 (0.177)Max 0.40 (0.016) 0.79 (0.031) 3 3.12 (0.123) 1.65 (0.065) 19.81 (0.780) 20.32 (0.800) 2.13 (0.084) (TYP.) 1.01 (0.040) 1.40 (0.055) (TYP.) 2.21 (0.087) 2.59 (0.102) 5.45 (0.215) 5.45 (0.215) Conforms to JEDEC Outline TO-247AB Dimensions in millimeters and (inches) www.nellsemi.com Page 6 of 6 1 Anode 3 Anode