2N5152 2N5154 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCHES 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. DESCRIPTION 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. The 2N5152 and the 2N5154 are silicon expitaxial planar NPN transistors in jedec TO-39 metal case intended for use in switching applications. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 The complementary PNP types are the 2N5151 and 2N5153 respectively 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO-39 (TO-205AD) Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) 2N5152 2N5154 VCBO Collector – Base Voltage (IE = 0) 100V VCEO Collector – Emitter Voltage (IB = 0) 80V VEBO Emitter – Base Voltage (IC = 0) 6V IC Continuous Collector Current 5A IC(PK) Peak Collector Current 10A IB Base Current 1A Ptot Total Dissipation at Tamb = 25°C 1W Tcase = 50°C 10W Tcase = 100°C 6.7W Tstg Operating and Storage Temperature Range Tj Junction temperature –65 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3072 Issue 3 2N5152 2N5154 ELECTRICAL CHARACTERISTICS FOR 2N5152 (Tcase = 25°C unless otherwise stated) Parameter ICES Collector Cut Off Current ICEV Collector Cut Off Current ICEO Collector Cut Off Current IEBO Emitter Cut Off Current VCEO(SUS)* Collector Emitter Saturation Voltage VCE(sat)* Collector Emitter Saturation Voltage VBE(sat)* Base Emitter Saturation Voltage VBE* Base Emitter Voltage hFE* CCBO DC Current Gain Collector Base Capacitance Test Conditions Small Signal Current Gain Turn On Time toff Turn Off Time Max. Unit VBE = 0 1 µA VCE = 100V VBE = 0 1 mA VCE = 60V Tcase = 150°C 500 VBE =- 2V µA VCE = 40V IB = 0 50 VEB = 5V IC = 0 1 µA VEB = 6V IC = 0 1 mA IC = 100mA IB = 0 IC = 2.5A IB = 250mA 0.75 IC = 5A IB = 500mA 1.5 IC = 2.5A IB = 250mA 1.45 IC = 5A IB = 500mA 2.2 IC = 2.5A VCE = 5V 1.45 IC = 50mA VCE = 5V 20 IC = 2.5A VCE = 5V 30 15 IC = 5A Tc = -55°C VCE = 5v IE = 0 VCB = 10V 80 VCE = 5V f = 1KHz IC = 0.5A VCE = 5v IC = 5A VCC = 30v IB1 = 0.5A IC = 5A VCC = 30V IB1=-IB2 = 0.5A V 90 20 250 f = 1MHz f = 20MHz ton Typ. VCE = 60V IC = 0.1A hFE Min. pF 20 3 0.5 µs 1.3 µs * Pulse test tp = 300µs , δ < 2% THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 15 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 175 °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3072 Issue 3 2N5152 2N5154 ELECTRICAL CHARACTERISTICS FOR 2N5154 (Tcase = 25°C unless otherwise stated) Parameter ICES Collector Cut Off Current ICEV Collector Cut Off Current ICEO Collector Cut Off Current IEBO Emitter Cut Off Current VCEO(SUS)* Collector Emitter Saturation Voltage VCE(sat)* Collector Emitter Saturation Voltage VBE(sat)* Base Emitter Saturation Voltage VBE* Base Emitter Voltage hFE* CCBO DC Current Gain Collector Base Capacitance Test Conditions Max. Unit VCE = 60V VBE = 0 1 µA VCE = 100V VBE = 0 1 mA VCE = 60V Tcase = 150°C Small Signal Current Gain Turn On Time toff Turn Off Time 500 µA VCE = 40V IB = 0 50 VEB = 5V IC = 0 1 µA VEB = 6V IC = 0 1 mA IC = 100mA IB = 0 IC = 2.5A IB = 250mA 0.75 IC = 5A IB = 500mA 1.5 IC = 2.5A IB = 250mA 1.45 IC = 5A IB = 500mA 2.2 IC = 2.5A VCE = 5V 1.45 IC = 50mA VCE = 5V 50 IC = 2.5A VCE = 5V 70 35 IC = 5A Tc = -55°C VCE = 5v IE = 0 VCB = 10V 80 VCE = 5V f = 1KHz IC = 0.5A VCE = 5v IC = 5A VCC = 30v IB1 = 0.5A IC = 5A VCC = 30V IB1=-IB2 = 0.5A V 200 40 250 f = 1MHz f = 20MHz ton Typ. VBE =- 2V IC = 0.1A hFE Min. pF 50 3.5 0.5 µs 1.3 µs * Pulse test tp = 300µs , δ < 2% THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max 15 °C/W Max 175 °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3072 Issue 3