2N6975, 2N6976, 2N6977, 2N6978 Semiconductor 5A, 400V and 500V N-Channel IGBTs April 1995 Features Package JEDEC TO-204AA BOTTOM VIEW • 5A, 400V and 500V • VCE(ON) 2V COLLECTOR (FLANGE) EMITTER • TFI 1µs, 0.5µs • Low On-State Voltage GATE • Fast Switching Speeds • High Input Impedance Terminal Diagram Applications N-CHANNEL ENHANCEMENT MODE • Power Supplies C • Motor Drives • Protection Circuits G Description The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits. E PACKAGING AVAILABILITY PART NUMBER PACKAGE 2N6975 TO-204AA 2N6976 TO-204AA 2N6977 TO-204AA 2N6978 TO-204AA BRAND NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified. Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage (RGE = 1MΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCGR Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCES(REV.) Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGE Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG NOTE: 2N6975/2N6977 (Note 1) 400 400 5 ±20 5 10 100 0.8 -55 to +150 2N6976/2N6978 (Note 1) 500 500 5 ±20 5 10 100 0.8 -55 to +150 UNITS V V V V A A W W/oC oC 1. JEDEC registered value. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright © Harris Corporation 1995 3-1 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 File Number 2297.2 Specifications 2N6975, 2N6976, 2N6977, 2N6978 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS SYMBOL TEST CONDITIONS 2N6975/2N6977 2N6976/2N6978 MIN MAX MIN MAX UNITS Collector-Emitter Breakdown Voltage BVCES lC = 1 mA, VGE = 0 400 (Note 1) - 500 (Note 1) - V Gate Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2 (Note 1) 4.5 (Note 1) 2 (Note 1) 4.5 (Note 1) V VCE = 400V - 250 (Note 1) - - µA VCE = 500V - - - 250 (Note 1) µA TC = +125oC - - - - µA VCE = 400V - 1000 (Note 1) - - µA VCE = 500V - - - 1000 (Note 1) µA Zero Gate Voltage Collector Current lCES Gate-Emitter Leakage Current IGES VGE = ±20V, VCE = 0V - 100 (Note 1) - 100 (Note 1) ns Reverse Collector-Emitter Leakage Current IECS RGE = 0Ω, VEC = 5V - 5 (Note 1) - 5 (Note 1) mA VCE(ON) IC = 5A, VGE = 10V - 2 (Note 1) - 2 (Note 1) V IC = 10A, VGE = 20V - 2.5 - 2.5 V Collector-Emitter On Voltage Gate-Emitter Plateau Voltage VGEP IC = 5A, VCE = 10V 3.4 (Note 1) 6.8 (Note 1) 3.4 (Note 1) 6.8 (Note 1) V On-State Gate Charge QG(ON) IC = 5A, VCE = 10V 12 (Note 1) 25 (Note 1) 12 (Note 1) 25 (Note 1) nC Turn-On Delay Time tD(ON) IC = 5A VCE(CLP) = 300V L = 50µH TJ = +125oC VGE = 10V RG = 50Ω Rise Time Turn-Off Delay Time Fall Time tR tD(ON) tFI Turn-Off Energy Loss per Cycle (Off Switching Dissipation= WOFF x Frequency) WOFF Thermal Resistance Junction-to-Case RθJC IC = 5A VCE(CLP) = 300V L = 50µH TJ = +125oC VGE = 10V RG = 50Ω 50 Max ns 50 Max ns 400 Max (Note 1) ns 2N6975 2N6976 1000 Max (Note 1) ns 2N6977 2N6978 500 Max (Note 1) ns 2N6975 2N6976 1000 Max (Note 1) µJ 2N6977 2N6978 500 Max (Note 1) µJ 1.25 (Note 1) NOTE: 1. JEDEC registered value. 3-2 oC/W 2N6975, 2N6976, 2N6977, 2N6978 Typical Performance Curves VGE = VCE IC = 1mA EFFECTIVE TRANSIENT THERMAL IMPEDANCE (NORMALIZED) NORMALIZED GATE THRESHOLD VOLTAGE 1.3 1.2 1.1 1.0 0.9 0.8 0.7 10 ZθJC(t) = r(t)RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(PEAK) - TC = P(PEAK)ZθJC(t) D = 0.5 D = 0.2 1.0 0.1 D = 0.05 SINGLE PULSE -50 0 +50 +100 0.01 0.01 +150 0.1 1.0 10 t, TIME (ms) TC , JUNCTION TEMPERATURE (oC) FIGURE 1. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE FOR ALL TYPES 10 7.5 +125oC 5.0 2.5 TC = +25oC VGE = +10V PULSE TEST, VCE = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX ICE, COLLECTOR CURRENT (A) ICE, COLLECTOR CURRENT (A) 1000 FIGURE 2. NORMALIZED THERMAL RESPONSE CHARACTERISTICS FOR ALL TYPES 10 -40oC +25oC VGE = +8V 7.5 VGE = +6V VGE = +7V VGE = +5V 5.0 2.5 VGE = +4V 0 0 0 2.5 5.0 7.5 0 10 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3. TYPICAL TRANSFER CHARACTERISTICS FOR ALL TYPES FIGURE 4. TYPICAL SATURATION CHARACTERISTICS FOR ALL TYPES 1200 10 f = 0.1MHz PULSE TEST PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 8 1000 VGE = 10V C, CAPACITANCE (pF) ICE, COLLECTOR CURRENT (A) 100 6 4 2 800 600 CISS 400 200 COSS CRSS 0 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER ON VOLTAGE (V) FIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE AS A FUNCTION OF COLLECTOR CURRENT FOR ALL TYPES 3-3 FIGURE 6. CAPACITANCE AS A FUNCTION OF COLLECTORTO-EMITTER VOLTAGE FOR ALL TYPES 2N6975, 2N6976, 2N6977, 2N6978 (Continued) fOP , MAXIMUM OPERATING FREQUENCY (kHz) Typical Performance Curves WOFF = ∫ IC * VCEdt VGE IC VCE TC = oC 100 90 140 100 fMAX1 = 0.05/tD(OFF) 120 fMAX2 = (PD - PC)/WOFF 2N6975 100 2N6977 2N6976 2N6978 80 VGE = 10V RG = 50Ω RL = 300/ceΩ L = 50µH VCC = 300V 60 40 TJ = +150oC 20 1 2 3 4 5 6 7 8 ICE, COLLECTOR CURRENT (A) FIGURE 7. TYPICAL INDUCTIVE SWITCHING WAVEFORMS PD: ALLOWABLE DISSIPATION PC: CONDUCTION DISSIPATION FIGURE 8. MAXIMUM OPERATING FREQUENCY vs COLLECTOR CURRENT (TYPICAL) VCE, COLLECTOR-EMITTER VOLTAGE (V) VCC = BVCES 375 RL = 100Ω GATE IG (REF) = 0.43mA VGE = 10V EMITTER VOLTAGE 8 VCC = BVCES 6 250 0.75 BVCES 0.50 BVCES 0.25 BVCES 125 4 0.75 BVCES 0.50 BVCES 0.25 BVCES 2 COLLECTOR-EMITTER VOLTAGE 0 VGE, GATE-EMITTER VOLTAGE (V) 10 500 0 20 IG (REF) IG (ACT) TIME (µs) 80 IG (REF) IG (ACT) FIGURE 9. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION NOTES AN7254 AND AN7260) RL L = 50µH 1/RG = 1/RGEN + 1/RGE VCC 300V RGEN = 100Ω 20V 0V RGE = 100Ω FIGURE 10. INDUCTIVE SWITCHING TEST CIRCUIT 3-4 + - 9 10