2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Packages are Available* 200 mAMPS 60 VOLTS RDS(on) = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain−Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) VGS VGSM ± 20 ± 40 Vdc Vpk ID 200 500 Drain Current − Continuous − Pulsed N−Channel D G mAdc IDM S Total Power Dissipation @ TC = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 357 °C/W TL 300 °C TO−92 CASE 29 STYLE 22 THERMAL CHARACTERISTICS Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM AND PIN ASSIGNMENT 2N 7000 AYWW G G 1 Source 2 Gate 3 Drain A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 6 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 2N7000/D 2N7000 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 60 − Vdc − − 1.0 1.0 mAdc mAdc OFF CHARACTERISTICS (VGS = 0, ID = 10 mAdc) Drain−Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) Gate−Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) IGSSF − −10 nAdc (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 3.0 Vdc − − 5.0 6.0 − − 2.5 0.45 ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Static Drain−Source On−Resistance W rDS(on) (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) Drain−Source On−Voltage VDS(on) (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) Vdc On−State Drain Current (VGS = 4.5 Vdc, VDS = 10 Vdc) Id(on) 75 − mAdc Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) gfs 100 − mmhos Ciss − 60 pF Coss − 25 Crss − 5.0 ton − 10 toff − 10 DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 1) Turn−On Delay Time Turn−Off Delay Time (VDD = 15 V, ID = 500 mA, RG = 25 W, RL = 30 W, Vgen = 10 V) ns 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device 2N7000 2N7000G 2N7000RLRA 2N7000RLRAG 2N7000RLRM 2N7000RLRMG 2N7000RLRP 2N7000RLRPG Package Shipping † TO−92 1000 Units / Bulk TO−92 (Pb−Free) 1000 Units / Bulk TO−92 2000 Tape & Reel TO−92 (Pb−Free) 2000 Tape & Reel TO−92 2000 Tape & Ammo Box TO−92 (Pb−Free) 2000 Tape & Ammo Box TO−92 2000 Tape & Ammo Box TO−92 (Pb−Free) 2000 Tape & Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 2N7000 2.0 1.0 VDS = 10 V TA = 25°C 1.6 VGS = 10 V 1.4 9V 1.2 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 0.8 125°C 0.6 0.4 0.2 10 0 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 −60 −20 +20 +60 T, TEMPERATURE (°C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2. Transfer Characteristics VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN−SOURCE ON−RESISTANCE (NORMALIZED) Figure 1. Ohmic Region 2.0 25°C −55 °C +100 +140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 −60 Figure 3. Temperature versus Static Drain−Source On−Resistance −20 +20 +60 T, TEMPERATURE (°C) +100 Figure 4. Temperature versus Gate Threshold Voltage http://onsemi.com 3 +140 2N7000 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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