NJG1146KG1 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC I GENERAL DESCRIPTION The NJG1146KG1 is a fully matched wide band low noise amplifier GaAs MMIC for digital TV applications. To achieve wide dynamic range, the NJG1146KG1 offers high gain mode and low gain mode. Selecting high gain mode for weak signals, the NJG1146KG1 helps improve receiver sensitivity through high gain and low noise figure. Selecting low gain mode for strong signals, it bypasses LNA circuit to offer higher linearity. An small and ultra-thin package of ESON6-G1 is adopted. I FEATURES G Operating frequency G Operating voltage G Package size [High gain mode] G Operating current G Gain G Noise figure G IM2 G IM3 [Low gain mode] G Low current consumption G Gain(Low loss) I PACKAGE OUTLINE NJG1146KG1 40MHz~900MHz 5.0V typ. ESON6-G1 (Package size: 1.6mm x 1.6mm x 0.397mm typ.) 60mA typ. 12.0dB typ. 2.2dB typ. 52.0dB typ. 80.0dB typ. 30µA typ. -1.0dB typ. I PIN CONFIGURATION (Top View) 4 3 RFIN RFOUT2 5 GND 6 2 Bias circuit NC (GND) Logic circuit 1 VCTL Pin Connection 1. RFOUT1 2. NC(GND) 3. RFOUT2 4. RFIN 5. GND 6. VCTL *Exposed PAD: GND RFOUT1 1pin INDEX I TRUTH TABLE “H”=VCTL(H)“L”=VCTL(L) VCTL LNA ON Bypass LNA mode H ON OFF High Gain mode L OFF ON Low Gain mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2011-03-17 -1- NJG1146KG1 I ABSOLUTE MAXIMUM RATINGS T a=+25°C, Zs=Zl=50 ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain voltage VDD 6.0 V Control voltage VCTL 6.0 V Input power PIN VDD=5.0V +10 dBm Power dissipation PD 4-layer FR4 PCB with through-hole (101.5x114.5mm), Tj=150°C 1200 mW Operating temperature Topr -40~+85 °C Storage temperature Tstg -55~+150 °C I ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) VDD=5.0V, T a=+25°C, with application circuit MIN TYP MAX UNITS VDD 2.4 5.0 5.5 V Control voltage (High) VCTL(H) 1.3 1.8 5.5 V Control voltage (Low) VCTL(L) 0.0 0.0 0.5 V PARAMETERS Operating voltage SYMBOL CONDITIONS Operating current1 IDD1 RF OFF, VCTL=1.8V - 60 80 mA Operating current2 IDD2 RF OFF, VCTL=0V - 30 50 µA Control current ICTL RF OFF, VCTL=1.8V - 6 12 µA -2- NJG1146KG1 I ELECTRICAL CHARACTERISTICS2 (High Gain mode) VDD=5.0V, VCTL=1.8V, freq=40~900MHz, T a=+25°C, ZS=Zl=50 ohm, with application circuit PARAMETERS SYMBOL Small signal gain1 Gain1 Noise figure1_1 NF1_1 Noise figure1_2 NF1_2 Input power at 1dB gain compression point1 Input 3rd order intercept point1 2nd order intermodulation distortion1 3rd order intermodulation distortion1 CONDITIONS MIN TYP MAX UNITS 9.0 12.0 14.0 dB - 2.5 4.0 dB - 2.2 3.0 dB +0.0 +6.0 - dBm +16.0 +22.0 - dBm 42.0 52.0 - dB 55.0 80.0 - dB - -17.0 -13.0 dB Exclude PCB & connector losses *1 freq=40~80MHz, Exclude PCB & connector losses *2 freq=80~900MHz, Exclude PCB & connector losses *2 P-1dB(IN)1 IIP3_1 IM2_1 IM3_1 f1=freq, f2=freq+100kHz, PIN=-12dBm f1=200MHz, f2=500MHz, fmeas=700MHz, PIN1=P IN2=-15dBm *3 f1=600MHz, f2=650MHz, fmeas=700MHz, PIN1=P IN2=-15dBm *3 Isolation ISL1 S12 RF IN Return loss1 RLi1 7.0 10.0 - dB RF OUT Return loss1 RLo1 7.0 10.0 - dB *1 Input & output PCB and connector losses: 0.014dB(40MHz), 0.088dB(620MHz), 0.121dB(900MHz) *2 Input PCB and connector losses: 0.007dB(40MHz), 0.011dB(80MHz), 0.044dB(620MHz), 0.060dB(900MHz) *3 Definitions of IM2 and IM3. Pout(dBm) Pout(dBm) IM2 IM3 700 600/650 700 frequency(MHz) frequency(MHz) 200 500 -3- NJG1146KG1 I ELECTRICAL CHARACTERISTICS3 (High Gain mode) VDD=5.0V, VCTL=1.8V, freq=40~900MHz, T a=+25°C, ZS=Zl=75 ohm, with application circuit PARAMETERS SYMBOL Small signal gain75 Gain75 Composite Second Order CSO Composite Triple Beat CTB CONDITIONS Exclude PCB & connector losses *1 74channels *4, CW PIN=+15dBmV fmeas=295.25MHz, 74channels *4, CW PIN=+15dBmV fmeas=295.25±1.25MHz, 74channels *4, Modulation PIN=+15dBmV fmeas=295.25±15.75kHz, MIN TYP MAX UNITS - 12.0 - dB - -56 - dBc - -81 - dBc - -80 - dBc Cross Modulation XMOD RF IN Return loss75 RLi75 - 15 - dB RF OUT Return loss75 RLo75 - 15 - dB *1 Input & output PCB and connector losses: 0.014dB(40MHz), 0.088dB(620MHz), 0.121dB(900MHz) *4 74channels: ch1~C63(91.25~463.25MHz 6MHz step) and U13~U25(471.25~543.25MHz 6MHz step) except ch7(189.25MHz) , C28(253.25MHz) -4- NJG1146KG1 I ELECTRICAL CHARACTERISTICS4 (Low Gain mode) VDD=5.0V, VCTL=0V, freq=40~900MHz, T a=+25°C, ZS=Zl=50 ohm, with application circuit PARAMETERS SYMBOL Small signal gain2 Gain2 Input power at 1dB gain compression point2 Input 3rd order intercept point2 2nd order intermodulation distortion1 3rd order intermodulation distortion1 CONDITIONS IM2_2 IM3_2 TYP MAX UNITS -2.5 -1.0 - dB +10.0 +16.0 - dBm +25.0 +33.0 - dBm 40.0 60.0 - dB 48.0 70.0 - dB Exclude PCB & connector losses *1 P-1dB(IN)2 IIP3_2 MIN f1=freq, f2=freq+100kHz, PIN=-2dBm f1=200MHz, f2=500MHz, fmeas=700MHz, PIN1=P IN2=-15dBm *3 f1=600MHz, f2=650MHz, fmeas=700MHz, PIN1=P IN2=-15dBm *3 RF IN Return loss2 RLi2 8.0 15.0 - dB RF OUT Return loss2 RLo2 8.0 15.0 - dB *1 Input & output PCB and connector losses: 0.014dB(40MHz), 0.088dB(620MHz), 0.121dB(900MHz) *3 Definitions of IM2 and IM3. Pout(dBm) Pout(dBm) IM2 IM3 700 600/650 700 frequency(MHz) frequency(MHz) 200 500 -5- NJG1146KG1 I TERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 RFOUT1 At the High gain mode, RF output terminal. This terminal doubles as the drain terminal of the LNA. Please connect this terminal to the power supply(VDD) via inductor(L1). 2 NC(GND) No connected terminal. This terminal is not connected with internal circuit. 3 RFOUT2 At the Low gain mode, RF output terminal. Please connect this terminal with RFOUT1 terminal through DC blocking capacitor(C2) shown in the application circuit. 4 RFIN RF input terminal. External capacitor C1 is required to block the DC bias voltage of internal circuit. 5 GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. 6 VCTL Control voltage terminal. Exposed Pad GND Ground terminal. Please connect Exposed Pad with GND by using the plated through holes. -6- NJG1146KG1 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=5.0V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit Gain, IDD vs. Pin Pout vs. Pin (f=620MHz) (f=620MHz) 20 14 90 15 0 Gain (dB) Pout (dBm) 5 -5 -10 12 80 10 70 8 60 IDD 6 -15 IDD (mA) Gain 10 50 Pout -20 4 40 -25 P-1dB(IN)=+7.7dBm P-1dB(IN)=+7.7dBm -30 -40 -30 -20 -10 0 2 -40 10 -30 -20 30 10 0 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin NF, Gain vs. Frequency (f1=620MHz, f2=620.1MHz) 40 OIP3=+36.1dBm 20 4 16 3.5 14 3 12 2.5 10 Pout -20 -40 IM3 8 2 NF Gain 1.5 6 1 4 Gain (dB) 0 NF (dB) Pout, IM3 (dBm) -10 -60 -80 -40 -30 -20 -10 0 10 20 2 0.5 IIP3=+24.3dBm (Exclude PCB, Connector Losses) 0 30 0 500 Pin (dBm) 1000 1500 Frequency (MHz) 0 2000 IIP3, OIP3 vs. Frequency P-1dB(IN) vs. Frequency (f1=Frequency, f2=f1+100kHz, Pin=-12dBm) 12 40 OIP3 11 35 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) 10 9 8 P-1dB(IN) 7 30 25 IIP3 6 20 5 15 4 0 500 1000 Frequency (MHz) 1500 2000 0 500 1000 1500 2000 Frequency (MHz) -7- NJG1146KG1 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=5.0V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit -8- S11, S22 (f=10MHz~3GHz) S21, S12 (f=10MHz~3GHz) VSWR (f=10MHz~3GHz) Zin, Zout (f=10MHz~3GHz) NJG1146KG1 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=5.0V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz) K-factor vs. Frequency 5 40 4 30 3 K-factor K-factor K-factor vs. Frequency 50 20 2 10 1 0 0 0 5000 10000 Frequency (MHz) 15000 20000 0 5000 10000 15000 20000 Frequency (MHz) -9- NJG1146KG1 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit Gain vs. VDD IDD vs. VDD (RF OFF) 80 (f=620MHz) 16 70 14 60 12 Gain Gain (dB) IDD (mA) 50 IDD 40 30 10 8 6 4 20 2 10 0 0 2 2.5 3 3.5 4 4.5 5 5.5 2 6 2.5 3 3.5 4 4.5 5 5.5 6 5 5.5 6 VDD (V) VDD (V) RLi, RLo vs. V DD NF vs. VDD 4 (f=620MHz) 20 3.5 3 15 NF (dB) RLi, RLo (dB) NF(at 40MHz) 2.5 2 NF(at 620MHz) 1.5 1 RLo 10 RLi 5 0.5 0 0 2 2.5 3 3.5 4 4.5 5 5.5 6 2 3 3.5 4 4.5 VDD (V) VDD (V) P-1dB(IN) vs. VDD IIP3, OIP3 vs. VDD (f=620MHz) 10 2.5 (f1=620MHz, f2=620.1MHz, Pin=-12dBm) 40 35 OIP3 30 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) 5 0 P-1dB(IN) 25 20 15 IIP3 10 -5 5 0 -10 2 2.5 3 3.5 4 VDD (V) - 10 - 4.5 5 5.5 6 2 2.5 3 3.5 4 VDD (V) 4.5 5 5.5 6 NJG1146KG1 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit IM2 vs. VDD IM3 vs. V DD (f1=200MHz, f2=500MHz, fmeas=700MHz, Pin1=Pin2=-15dBm) 80 (f1=600MHz, f2=650MHz, fmeas=700MHz, Pin1=Pin2=-15dBm) 100 70 80 60 IM3 IM2 IM3 (dB) IM2 (dB) 50 40 30 60 40 20 20 10 0 0 2 2.5 3 3.5 4 4.5 5 5.5 6 2 2.5 3 VDD (V) 4 4.5 5 5.5 6 VDD (V) K-factor vs. Frequency K-factor vs. Frequency 50 5 40 4 30 3 K-factor K-factor 3.5 VDD=6.0V 20 VDD=6.0V 2 VDD=5.0V VDD=5.0V 1 10 VDD=2.4V VDD=2.4V 0 0 0 5000 10000 Frequency (MHz) 15000 20000 0 5000 10000 15000 20000 Frequency (MHz) - 11 - NJG1146KG1 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=5.0V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit IDD vs. Ta Gain vs. Ta (RF OFF) 80 (f=620MHz) 16 70 14 60 12 Gain IDD Gain (dB) IDD (mA) 50 40 30 8 6 4 20 2 10 0 -40 10 -20 0 20 40 60 80 0 -40 100 -20 0 20 Ta ( C) 60 80 100 NF vs. Frequency 6 5 5 4 4 Ta=+85oC NF (dB) NF (dB) NF vs. Ta 6 3 NF(at 40MHz) 2 Ta=+25oC 3 2 NF(at 620MHz) 1 0 -40 40 Ta (oC) o Ta=-40oC 1 -20 0 20 40 60 80 0 100 0 200 400 Ta (oC) 600 800 1000 Frequency (MHz) P-1dB(IN) vs. Ta IIP3, OIP3 vs. Ta (f=620MHz) (f1=620MHz, f2=620.1MHz, Pin=-12dBm) 40 10 35 OIP3 30 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) 8 P-1dB(IN) 6 4 25 20 IIP3 15 10 2 5 0 -40 -20 0 20 40 o Ta ( C) - 12 - 60 80 100 0 -40 -20 0 20 40 o Ta ( C) 60 80 100 NJG1146KG1 I ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=5.0V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit IM2 vs. Ta IM3 vs. Ta (f1=200MHz, f2=500MHz, fmeas=700MHz, Pin1=Pin2=-15dBm) 80 (f1=600MHz, f2=650MHz, fmeas=700MHz, Pin1=Pin2=-15dBm) 100 70 IM3 80 60 IM2 IM3 (dB) IM2 (dB) 50 40 30 60 40 20 20 10 0 -40 -20 0 20 40 60 80 0 -40 100 -20 0 RLi, RLo vs. Ta 40 60 80 100 IDD vs. VCTL (f=620MHz) 20 20 Ta (oC) Ta (oC) 80 70 60 RLi 50 IDD (mA) RLi, RLo (dB) 15 10 RLo o +85 C 40 o 0C o +75 C 30 o -25 C o 5 +50 C 20 o -40 C o +25 C 10 0 -40 0 -20 0 20 40 60 80 100 0 0.5 Ta ( C) K-factor vs. Frequency 1.5 2 K-factor vs. Frequency 50 5 40 4 30 K-factor K-factor 1 VCTL (V) o Ta=+85oC 20 3 Ta=+85oC 2 Ta=+25oC 10 1 Ta=-40oC Ta=-40oC Ta=+25oC 0 0 5000 10000 Frequency (MHz) 15000 20000 0 0 5000 10000 15000 20000 Frequency (MHz) - 13 - NJG1146KG1 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=5.0V, VCTL=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit Gain, IDD vs. Pin Pout vs. Pin (f=620MHz) (f=620MHz) 20 0 10 15 Gain 10 5 -1 8 -2 6 -10 -15 -20 -3 IDD (mA) -5 Gain (dB) Pout (dBm) 0 4 P-1dB(IN)=+18.0Bm -25 Pout -30 -4 2 -35 -40 IDD P-1dB(IN)=+18.0dBm -5 -45 -40 -30 -20 -10 0 10 0 -40 20 -30 -20 -10 0 10 20 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin Gain vs. Frequency (f1=620MHz, f2=620.1MHz) 40 0 OIP3=+36.2dBm 20 -2 Gain Pout -20 Gain (dB) Pout, IM3 (dBm) 0 -40 -4 -6 -60 IM3 -8 -80 IIP3=+37.1dBm -100 -30 -20 -10 0 10 20 30 (Exclude PCB, Connector Losses) -10 40 0 500 Pin (dBm) 1000 1500 2000 Frequency (MHz) IIP3, OIP3 vs. Frequency P-1dB(IN) vs. Frequency (f1=Frequency , f2=f1+100kHz, Pin=-2dBm) 40 20 IIP3 IIP3, OIP3 (dBm) P-1dB(IN) (dBm) 19 18 P-1dB(IN) 17 OIP3 35 30 16 25 15 0 - 14 - 500 1000 Frequency (MHz) 1500 2000 0 500 1000 Frequency (MHz) 1500 2000 NJG1146KG1 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=5.0V, VCTL=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit S11, S22 (f=10MHz~3GHz) S21, S12 (f=10MHz~3GHz) VSWR (f=10MHz~3GHz) Zin, Zout (f=10MHz~3GHz) - 15 - NJG1146KG1 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=5.0V, VCTL=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz) K-factor vs. Frequency 5 40 4 30 3 K-factor K-factor K-factor vs. Frequency 50 20 1 10 0 0 0 5000 10000 Frequency (MHz) - 16 - 2 15000 20000 0 5000 10000 Frequency (MHz) 15000 20000 NJG1146KG1 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=5.0V, VCTL=0V, Zs=Zl=50 ohm, with application circuit IDD vs. Ta Gain vs. Ta (RF OFF) 50 (f=620MHz) 0 -0.5 -1 Gain IDD 30 Gain (dB) IDD (µ A) 40 20 -1.5 -2 -2.5 -3 10 -3.5 0 -40 -20 0 20 40 60 80 -4 -40 100 -20 0 P-1dB(IN) vs. Ta 80 100 80 100 (f=620MHz) 24 22 P-1dB(IN) (dBm) RLi, RLo (dB) 60 RLi, RLo vs. Ta RLi 15 40 Ta ( C) (f=620MHz) 20 20 Ta (oC) o RLo 10 20 P-1dB(IN) 18 5 16 0 -40 -20 0 20 40 60 80 100 Ta (oC) 14 -40 -20 0 20 40 60 Ta (oC) IIP3, OIP3 vs. Ta (f1=620MHz, f2=620.1MHz, Pin=-2dBm) 40 IIP3 IIP3, OIP3 (dBm) 38 36 OIP3 34 32 30 -40 -20 0 20 40 60 80 100 o Ta ( C) - 17 - NJG1146KG1 I ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=5.0V, VCTL=0V, Zs=Zl=50 ohm, with application circuit IM2 vs. Ta IM3 vs. Ta (f1=200MHz, f2=500MHz, fmeas=700MHz, Pin1=Pin2=0dBm) 80 (f1=600MHz, f2=650MHz, fmeas=700MHz, Pin1=Pin2=0dBm) 100 70 80 60 IM3 IM2 IM3 (dB) IM2 (dB) 50 40 30 60 40 20 20 10 0 -40 -20 0 20 40 60 80 0 -40 100 -20 0 20 40 60 80 100 Ta (oC) Ta (oC) K-factor vs. Frequency K-factor vs. Frequency 50 5 40 4 30 3 K-factor K-factor Ta=+85oC Ta=+85oC 20 Ta=+25oC 2 Ta=+25oC Ta=-40oC 1 10 Ta=-40oC 0 0 0 5000 10000 Frequency (MHz) - 18 - 15000 20000 0 5000 10000 Frequency (MHz) 15000 20000 NJG1146KG1 I APPLICATION CIRCUIT (Top View) R1 680 ohm C2 0.01µ µF RF IN 4 C1 0.01µ µF 3 RFIN RFOUT2 5 GND VCTL 2 Bias circuit NC (GND) RF OUT Logic circuit 6 VCTL 1 RFOUT1 1Pin INDEX L1 470nH C4 0.01µ µF C3 0.01µ µF VDD I TEST PCB LAYOUT PARTS LIST Parts ID. L1 R1 C1 RF IN C2 C3 RF OUT C1~C4 R1 Manufacturer TAIYO-YUDEN HK1608 Series MURATA GRM15 Series KOA RK73B Series L1 C4 VDD VCTL PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.40mm (Z0=50 ohm) PCB SIZE=16.8mm x 16.8mm 1PIN INDEX PRECAUTIONS G C1~C3 are DC-Blocking capacitors, and L1 is a DC-feed inductor, and C4 is a bypass capacitor. G L1 is an RF choke. (DC feed inductor) G Please connect Exposed Pad with GND by using the plated through hole. G In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. G All external parts are placed as close as possible to the IC. - 19 - NJG1146KG1 I MEASUREMENT BLOCK DIAGRAM Measuring instruments NF Analyzer : Agilent 8973A Noise Source : Agilent 346A Setting the NF analyzer Measurement mode form Device under test : Amplifier System downconverter : off Mode setup form Sideband : LSB Averages : 16 Average mode : Point Bandwidth : 4MHz Loss comp : off Tcold : setting the temperature of noise source (303.15K) NF Analyzer (Agilent 8973A) Noise Source (Agilent 346A) * Noise source and NF analyzer Input (50Ω) Noise Source Drive Output are connected directly. Calibration Setup NF Analyzer (Agilent 8973A) Noise Source (Agilent 346A) * Noise source and DUT, DUT and In DUT out Measurement Setup - 20 - Input (50Ω) Noise Source Drive Output NF analyzer are connected directly. NJG1146KG1 I PACKAGE OUTLINE (ESON14-D7) 0.10 M S A 0 . 39 7 ±0 . 0 3 0 S 0.075 0.10 M S S +0.010 -0.008 0.05 S 1. 6 0 ±0 . 0 5 B 1 . 6 0 ± 0 .0 5 A 0. 0 1 0 Please connect to GND +0.06 -0.04 C0 +0.06 0 . 6 8 -0.04 1.20 .2 +0.06 0 . 2 1 -0.04 B 3 0 -R Unit Substrate Terminal Treat Molding Material Weight .2 0. 5 :mm :Cu :SnBi :Epoxy Resin :0.0035 (g) 0.5 0 . 2 6 +0.06 -0.04 φ0.05 M S AB Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 21 -