DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. PART NUMBER PACKAGE NP22N055HHE TO-251 NP22N055IHE TO-252 FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low Ciss : Ciss = 590 pF TYP. • Built-in gate protection diode (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±22 A Note1 ID(pulse) ±55 A Total Power Dissipation (TA = 25°C) PT 1.2 W Total Power Dissipation (TC = 25°C) Drain Current (Pulse) PT 45 W Single Avalanche Current Note2 IAS 13 / 5 A Single Avalanche Energy Note2 EAS 16 / 25 mJ Channel Temperature Tch 175 °C Storage Temperature Tstg –55 to +175 °C (TO-252) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 V→0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Rth(ch-C) 3.33 °C/W Channel to Ambient Rth(ch-A) 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14135EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999 NP22N055HHE, NP22N055IHE ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT 30 39 mΩ 2.0 3.0 4.0 V 4 8 Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 11 A Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Forward Transfer Admittance | yfs | VDS = 10 V, ID = 11 A Drain Leakage Current IDSS VDS = 55 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz 590 890 pF Output Capacitance Coss 110 170 pF Reverse Transfer Capacitance Crss 52 94 pF Turn-on Delay Time td(on) ID = 11 A, VGS(on) = 10 V, VDD = 28 V, 11 24 ns RG = 1 Ω 6.0 15 ns td(off) 25 49 ns tf 6.6 17 ns 12 18 nC Rise Time tr Turn-off Delay Time Fall Time Total Gate Charge QG Gate to Source Charge QGS 3 nC Gate to Drain Charge QGD 5 nC IF = 22 A, VGS = 0 V 1.0 V IF = 22 A, VGS = 0 V, di/dt = 100A/µs 35 ns 42 nC Body Diode Forward Voltage VF(S-D) Reverse Recovery Time trr Reverse Recovery Charge Qrr ID = 22 A, VDD = 44 V, VGS = 10 V S TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS(on) 10 % 90 % VDD VDS 90 % BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10 % 10 % 0 Wave Form VDD D.U.T. IG = 2 mA 90 % VDS VGS 0 RL VDD Data Sheet D14135EJ3V0DS td(on) tr ton td(off) tf toff NP22N055HHE, NP22N055IHE TYPICAL CHARACTERISTICS (TA = 25 °C) Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 70 100 80 60 40 20 0 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 0 25 TC - Case Temperature - ˚C ★ ID(pulse) ID(DC) s 0µ s =1 0µ 10 1m Po DC Lim wer ite Dis d sip ati PW Single Pulse Avalanche Energy - mJ 10 s on 1 TC = 25˚C Single Pulse 0.1 0.1 1 100 125 150 175 200 30 25 25 mJ 20 10 5 0 25 10 IAS = 5 A 13 A 16 mJ 15 100 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - ˚C VDS - Drain to Source Voltage - V Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A 1000 d ite ) im 0 V )L 1 n o = S( S RD t VG (a 75 Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR Figure3. FORWARD BIAS SAFE OPERATING AREA 100 50 TC - Case Temperature - ˚C Rth(ch-A) = 125 ˚C/W 100 10 Rth(ch-C) = 3.33 ˚C/W 1 0.1 0.01 10 µ Single Pulse TC = 25˚C 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14135EJ3V0DS 3 NP22N055HHE, NP22N055IHE Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Figure6. FORWARD TRANSFER CHARACTERISTICS 100 60 Pulsed Pulsed ID - Drain Current - A ID - Drain Current - A 50 10 TA = −40˚C 25˚C 75˚C 150˚C 175˚C 1 0.1 VGS =10 V 40 30 20 10 VDS = 10 V 0 | yfs | - Forward Transfer Admittance - S Pulsed VDS = 10 V 10 TA = 175˚C 75˚C 25˚C −40˚C 1 0.1 0.01 0.01 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A 4 Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 Pulsed 70 60 50 40 30 VGS = 10 V 20 10 0 0.1 1 10 2 3 4 VDS - Drain to Source Voltage - V Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 1 0 6.0 100 RDS(on) - Drain to Source On-state Resistance - mΩ 2.0 3.0 4.0 5.0 VGS - Gate to Source Voltage - V VGS(th) - Gate to Source Threshold Voltage - V 0.01 1.0 Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 Pulsed 70 60 50 40 ID = 11 A 30 20 10 0 5 0 10 15 20 VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VDS = VGS ID = 250 µA 4.0 3.0 2.0 1.0 0 −50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet D14135EJ3V0DS Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 90 100 ISD - Diode Forward Current - A 80 70 60 VGS = 10 V 40 30 20 10 ID = 11 A 0 −50 50 0 100 Pulsed VGS = 10 V 10 VGS = 0 V 1 0.1 0.01 0 150 0.5 Tch - Channel Temperature - ˚C Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 VGS = 0 V f = 1 MHz 1000 Coss Crss 10 0.1 1 10 1000 100 tf td(off) td(on) 10 tr 1 0.1 100 100 ID - Drain Current - A Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 di/dt = 100 A/µs VGS = 0 V 100 10 VDS - Drain to Source Voltage - V 80 1000 trr - Reverse Recovery Time - ns 10 1 VDS - Drain to Source Voltage - V 1 0.1 1.5 Figure15. SWITCHING CHARACTERISTICS Ciss 100 1.0 VSD - Source to Drain Voltage - V 14 60 10 VGS 10 8 40 6 20 4 VDS 2 ID = 22 A 0 1.0 12 VDD = 44 V 28 V 11 V 0 100 2 4 6 8 10 12 14 VGS - Gate to Source Voltage - V 50 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ NP22N055HHE, NP22N055IHE 16 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D14135EJ3V0DS 5 NP22N055HHE, NP22N055IHE PACKAGE DRAWINGS (Unit: mm) 1)TO-251 (MP-3) 2)TO-252 (MP-3Z) 2.3±0.2 2.3 TYP. 10.0 MAX. 0.9 MAX. 2.3 TYP. 0.8 MAX. 0.7 TYP. 1.1±0.2 0.8 TYP. 2.3 TYP. 0.75 TYP. 2.3 TYP. 0.5+0.2 −0.1 0.5±0.1 2.0 MIN. 0.8 TYP. 0.5+0.2 −0.1 5.5±0.2 4.3 MAX. 5.5±0.2 7.0 MIN. 13.7 MIN. 1.6±0.2 5.0±0.2 1.1±0.2 2.3±0.2 6.5±0.2 1.0 MIN. 1.8 TYP. 0.5±0.1 1.5+0.2 −0.1 5.0±0.2 1.5+0.2 −0.1 6.5±0.2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark 1. These products are an electrostatic sensitive device. Please handle with caution. 2. The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D14135EJ3V0DS NP22N055HHE, NP22N055IHE [MEMO] Data Sheet D14135EJ3V0DS 7 NP22N055HHE, NP22N055IHE • The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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