DATA SHEET MOS FIELD EFFECT TRANSISTOR NP24N10CLB, NP24N10DLB, NP24N10ELB SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES PART NUMBER PACKAGE NP24N10CLB TO-220AB NP24N10DLB TO-262 NP24N10ELB TO-263 • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 80 mΩ MAX. (VGS = 10 V, ID = 12 A) (TO-220AB) RDS(on)2 = 93 mΩ MAX. (VGS = 5.0 V, ID = 10 A) • Low Ciss: Ciss = 1300 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 100 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V ID(DC) ±24 A ID(pulse) ±80 A Total Power Dissipation (TA = 25°C) PT 1.8 W Total Power Dissipation (TC = 25°C) PT 100 W Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note1 Single Avalanche Current Note2 IAS 24 / 7 A Single Avalanche Energy Note2 EAS 57 / 245 mJ Repetitive Avalanche Current Note3 IAR 20 A Repetitive Avalanche Energy Note3 EAR 10 mJ Channel Temperature Tch 175 °C Storage Temperature Tstg –55 to +175 °C (TO-262) (TO-263) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω , VGS = 20 → 0 V 3. Tch ≤ 175°C, RG = 25 Ω , VGS = 20 → 0 V, Duty cycle ≤ 3% THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 1.50 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13465EJ1V0DS00 (1st edition) Date Published December 2001 NS CP(K) Printed in Japan © 1998 NP24N10CLB, NP24N10DLB, NP24N10ELB ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA 2.0 V Gate Cut-off Voltage VGS(off) VDS =10 V, ID = 1 mA 1.0 1.5 | yfs | VDS = 10 V, ID = 10 A 12 22 RDS(on)1 VGS = 10 V, ID = 12 A 55 80 mΩ RDS(on)2 VGS = 5.0 V, ID = 10 A 61 93 mΩ RDS(on)3 VGS = 4.0 V, ID = 10 A 65 100 mΩ Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Ciss VDS = 10 V 1300 3100 pF Coss VGS = 0 V 460 700 pF 150 300 pF VDD = 50 V, ID = 10 A 22 50 ns VGS = 10 V 110 280 ns 140 280 ns 120 280 ns 80 nC Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time tr Turn-off Delay Time td(off) Fall Time f = 1 MHz RG = 10 Ω tf Total Gate Charge Gate to Source Charge Gate to Drain Charge QG VDD = 80 V 51 QGS VGS = 10 V 4.9 nC 15 nC IF = 20 A, VGS = 0 V 1.1 V trr IF = 20 A, VGS = 0 V 170 ns Qrr di/dt = 100 A/µs 770 nC QGD Body Diode Forward Voltage VF(S-D) Reverse Recovery Time Reverse Recovery Charge S ID = 20 A TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D13465EJ1V0DS tr td(off) td(on) ton tf toff NP24N10CLB, NP24N10DLB, NP24N10ELB TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 0 0 25 50 75 120 100 80 60 40 20 0 100 125 150 175 200 0 25 50 TC - Case Temperature - ˚C 1000 V) 10 0 1 G d ite 10 (V ID(DC)= 24 A im R DC L n) (o DS 1 0.1 0.1 1 10 s = 10 Single Pulse Avalanche Energy - mJ 10 s µ = S µ m s m P s Li ow m er ite D d( iss P T ip = ati 10 on 0 W ) 10 100 350 300 245 mJ 250 200 IAS = 7 A 24 A 150 100 57 mJ 50 0 25 1000 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - ˚C VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A Tc = 25˚C Single Pulse 100 100 125 150 175 200 SINGLE AVALANCHE ENERGY DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA ID(pulse) = 80 A PW 75 TC - Case Temperature - ˚C 100 10 Rth(ch-C) = 1.50˚C/W 1 0.1 0.01 10 µ TC = 25˚C Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D13465EJ1V0DS 3 NP24N10CLB, NP24N10DLB, NP24N10ELB DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS VDS = 10 V Pulsed 100 TA = –25˚C 25˚C 125˚C 10 Pulsed 50 ID - Drain Current - A ID - Drain Current - A 1000 VGS = 6 V VGS = 10 V 40 30 VGS = 4 V 20 10 1 0 0 5 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Tch = –25˚C 25˚C 75˚C 125˚C 10 1 0.1 1 10 100 160 Pulsed 120 VGS = 4 V 80 VGS = 10 V 40 1 10 100 Pulsed 140 120 100 80 ID = 8.0 A 60 40 20 0 10 20 30 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V |yfs| - Forward Transfer Admittance - S VDS = 10 V Pulsed RDS(on) - Drain to Source On-State Resistance - mΩ FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - mΩ 8 VGS - Gate to Source Voltage - V 100 0 6 4 2 VDS - Drain to Source Voltage - V 1000 4 0 15 VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 ID - Drain Current - A 0 –50 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet D13465EJ1V0DS SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1000 160 ISD - Diode Forward Current - A 120 VGS = 4 V 80 VGS = 10 V 40 –50 0 50 100 Pulsed 100 VGS = 10 V 10 1 VGS = 0 ID = 10 A 0 TA = 25˚C 0.1 150 0 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 f = 1 MHz Ciss 1000 Coss 100 Crss 10 1 10 100 1000 td(off) 100 tf tr td(on) 10 VDD = 50 V VGS = 10 V RG = 10 Ω 1.0 0.1 1.0 VDS - Drain to Source Voltage - V 100 10 100 80 VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns di/dt = 100 A/µ s VGS = 0 1.0 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 10 0.1 10 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 10000 1.5 1.0 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 0.5 VSD - Source to Drain Voltage - V VDD = 80 V ID = 20 A 16 14 12 60 VDS 10 40 VGS 8 6 20 4 2 0 IF - Diode Current - A Data Sheet D13465EJ1V0DS 20 40 60 QG - Gate Charge - nC VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ NP24N10CLB, NP24N10DLB, NP24N10ELB 0 80 5 NP24N10CLB, NP24N10DLB, NP24N10ELB PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut) 4 15.5 MAX. 5.9 MIN. 10 TYP. 4 1 1.3±0.2 12.7 MIN. 6.0 MAX. 1 2 3 3 1.3±0.2 0.5±0.2 0.75±0.1 2.54 TYP. 2 2.8±0.2 2.54 TYP. 4.8 MAX. 1.3±0.2 8.5±0.2 1.3±0.2 10.0 TYP. 12.7 MIN. 3.0±0.3 φ 3.6±0.2 1.0±0.5 4.8 MAX. 10.6 MAX. 0.5±0.2 0.75±0.3 2.54 TYP. 2.8±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) TO-263 (MP-25ZJ) EQUIVALENT CIRCUIT 4.8 MAX. 10 TYP. 1.3±0.2 Drain 2 3 5.7±0.4 1 8.5±0.2 1.0±0.5 4 1.4±0.2 0.7±0.2 Remark P. R 0.5 2.54 TYP. 2.8±0.2 2.54 TYP. Gate TY R 0.8 Gate Protection Diode P. TY 0.5±0.2 Body Diode Source 1.Gate 2.Drain 3.Source 4.Fin (Drain) The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D13465EJ1V0DS NP24N10CLB, NP24N10DLB, NP24N10ELB [MEMO] Data Sheet D13465EJ1V0DS 7 NP24N10CLB, NP24N10DLB, NP24N10ELB • The information in this document is current as of December, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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