DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3659 Isolated TO-220 designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V drive available. •Low on-state resistance, RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A) •Low gate charge, QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A) •Built-in gate protection diode. •Avalanche capability ratings. •Isolated TO-220 package. ABSOLUTE MAXIMUM RATING (TA = 25°C) Drain to source voltage (VGS = 0 V) VDSS 20 V Gate to source voltage (VDS = 0 V) VGSS ±20 V Drain current (DC) (TC = 25°C) ID(DC) ±65 A ID(pulse) ±260 A Total power dissipation (TA = 25°C) PT1 2.0 W Total power dissipation (TC = 25°C) PT2 25 W Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Drain current (pulse) Note1 Single Avalanche Current Note2 IAS 35 A Single Avalanche Energy Note2 EAS 122 mJ Note 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 10 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16251EJ2V0DS00 (2nd edition) Date Published June 2002 NS CP (K) Printed in Japan © 2002 2SK3659 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V | yfs | VDS = 10 V, ID = 40 A 15 RDS(on)1 VGS = 10 V, ID = 40 A 4.6 5.7 mΩ RDS(on)2 VGS = 4.5 V, ID = 40 A 7.1 9.9 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 1700 pF Output Capacitance Coss VGS = 0 V 700 pF Reverse Transfer Capacitance Crss f = 1 MHz 250 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 40 A 16 ns tr VGS = 10 V 14 ns td(off) RG = 10 Ω 50 ns 12 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 16 V 32 nC Gate to Source Charge QGS VGS = 10 V 6.0 nC Gate to Drain Charge QGD ID = 65 A 8.3 nC VF(S-D) IF = 65 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 65 A, VGS = 0 V 45 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 34 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Data Sheet D16251EJ2V0DS td(on) tr ton td(off) tf toff 2SK3659 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 30 80 60 40 20 25 20 15 10 5 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 PW = 100 µs 1 ms 10 ms 100 ms ID(pulse) R DS (on) Limited 10 ID(DC) DC Power Dissipation Limited 1 T C = 25°C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 100 Rth(ch-A) = 62.5°C/W 100 10 Rth(ch-C) = 5°C/W 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16251EJ2V0DS 3 2SK3659 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 300 Pulsed VDS = 10 V Pulsed 100 VGS = 10 V 200 ID - Drain Current - A ID - Drain Current - A 250 150 4.5 V 100 50 10 Tch = 150°C 75°C 25°C −55°C 1 0.1 0.01 0 0 0.5 1 1.5 1 2 2 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 6 100 VDS = 10 V ID = 1 mA 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 | yfs | - Forward Transfer Admittance - S VGS(off) – Gate Cut-off Voltage - V 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3.0 Pulsed VDS = 10 V 10 Tch = 150°C 75°C 25°C −55°C 1 0.1 0.01 0.1 Tch - Channel Temperature - °C 20 15 VGS = 4.5 V 5 10 V 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ Pulsed 0.1 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 25 10 1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 4 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V ID - Drain Current - A 4 3 20 Pulsed 15 10 ID = 40 A 5 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D16251EJ2V0DS 20 2SK3659 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 14 10000 ID = 40 A Pulsed VGS = 10 V f = 1 MHz 10 VGS = 4.5 V 8 10 V 6 4 2 0 -50 0 50 100 Ciss 1000 Coss Crss 100 10 0.01 150 Tch - Channel Temperature - °C 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 10 20 1000 VDD = 10 V VGS = 10 V RG = 10 Ω 100 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS td(off) tf td(on) 10 tr 16 8 VDD = 16 V 10 V 6 12 VGS 4 8 2 4 VDS ID = 65 A 0 0 1 0 0.1 1 10 5 10 15 20 25 30 35 100 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns 1000 ISD - Diode Forward Current - A 0.1 VGS - Gate to Source Voltage - V 12 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 VGS = 10 V 0V 10 1 0.1 100 10 VGS = 0 V di/dt = 100 A/µs Pulsed 0.01 1 0 0.5 1 1.5 VSD - Source to Drain Voltage - V 0.1 1 10 100 ID - Drain Current - A Data Sheet D16251EJ2V0DS 5 2SK3659 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 100 V DD = 10 V R G = 25 Ω V GS = 20 → 0 V IAS ≤ 35 A Energy Derating Factor - % IAS - Single Avalanche Current - A IAS = 35 A 10 E AS = 122 mJ 1 V DD = 10 V R G = 25 Ω V GS = 20 → 0 V Starting T ch = 25°C 0.1 0.01 80 60 40 20 0 0.1 1 10 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - mH 6 25 Data Sheet D16251EJ2V0DS 2SK3659 PACKAGE DRAWING (Unit: mm) Isolated TO-220 (MP-45F) 10.0± 0.3 φ 3.2± 0.2 4.5± 0.2 2.7± 0.2 12.0± 0.2 Drain 13.5 MIN. 4± 0.2 3± 0.1 15.0± 0.3 EQUIVALENT CIRCUIT 1.3± 0.2 0.7± 0.1 1.5± 0.2 2.54 TYP. 2.54 TYP. Body Diode Gate 2.5± 0.1 Gate Protection Diode Source 0.65± 0.1 1.Gate 2.Drain 3.Source 1 2 3 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D16251EJ2V0DS 7 2SK3659 • The information in this document is current as of June, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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