DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3307 TO-3P designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A) (TO-3P) RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 4650 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) ±20 V ID(DC) ±70 A ID(pulse) ±280 A Total Power Dissipation (TC = 25°C) PT1 120 W Total Power Dissipation (TA = 25°C) PT2 3.0 W Channel Temperature Tch 150 °C Drain Current (DC) Drain Current (pulse) Note1 Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 45 A Single Avalanche Energy Note2 EAS 202 mJ Storage Temperature Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 1.04 °C/W Channel to Ambient Rth(ch-A) 41.7 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14129EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999, 2000 2SK3307 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 35 A 30 47 RDS(on)1 VGS = 10 V, ID = 35 A 7.5 9.5 mΩ RDS(on)2 VGS = 4.0 V, ID = 35 A 10.5 14 mΩ VDS = 10 V, VGS = 0 V, f = 1 MHz 4650 pF Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss Output Capacitance Coss 780 pF Reverse Transfer Capacitance Crss 380 pF Turn-on Delay Time td(on) 90 ns 1260 ns td(off) 270 ns tf 370 ns 90 nC Rise Time tr Turn-off Delay Time Fall Time ID = 35 A, VGS(on) = 10 V, VDD = 30 V, RG = 10 Ω Total Gate Charge QG Gate to Source Charge QGS 14 nC Gate to Drain Charge QGD 24 nC Body Diode Forward Voltage ID = 70 A , VDD = 48 V, VGS = 10 V VF(S-D) IF = 70 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 70 A, VGS = 0 V, 60 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 110 nC TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS(on) 10% Data Sheet D14129EJ3V0DS tr td(off) td(on) ton tf toff 2SK3307 TYPICAL CHARACTERISTICS (TA = 25°C ) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 175 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 20 40 60 80 100 120 140 150 125 100 75 50 25 0 0 160 20 Tch - Channel Temperature - ˚C ★ 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 1000 100 10 S RD t VGS (a 1m s PW 10 0µ s =1 0µ s ms Po Lim wer D ite DC i d ssip ati on 10 1 TC = 25˚C 0.1 Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A ID(pulse) d ite im 0 V) )L (on =1 100 Rth(ch-A) = 41.7 ˚C/W 10 1 Rth(ch-C) = 1.04 ˚C/W 0.1 0.01 10 µ Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14129EJ3V0DS 3 2SK3307 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 300 10 TA = −50˚C 25˚C 75˚C 150˚C 1 0.1 | yfs | - Forward Transfer Admittance - S ID - Drain Current - A 100 100 1 2 3 100 4.0 V Pulsed 4 3 VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VDS = 10 V Pulsed 10 TA = 150˚C 75˚C 25˚C −50˚C 1 0.1 0.1 1 10 100 20 Pulsed 10 ID = 35 A 0 5 0 30 20 VGS = 4.0 V 10 V 10 100 20 3 VDS = 10 V ID = 1 mA 2.5 2 1.5 1 0.5 0 1 15 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 10 10 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0 0.1 2 1 0 VGS(off) - Gate Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 150 VDS - Drain to Source Voltage - V ID - Drain Current - A 4 200 0 VDS = 10 V 6 5 4 VGS =10 V 250 50 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A 1000 Pulsed 1000 −50 0 50 100 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet D14129EJ3V0DS 150 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1000 Pulsed 20 VGS = 4.0 V 15 10 10 V 5 0 ID = 35 A −50 50 0 100 Pulsed VGS = 10 V 100 VGS = 0 V 10 1 0 150 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss 1000 Coss Crss 1 100 10 tr 1000 td(off) tf 100 td(on) 10 0.1 100 10 10 100 10 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 100 A/µs VGS = 0 V 1.0 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 10 1 VDS - Drain to Source Voltage - V 1000 2.0 1.6 10000 VGS = 0 V f = 1 MHz 10000 100 0.1 1.2 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 100000 0.8 0.4 VSD - Source to Drain Voltage - V 8 80 VDD = 48 V 30 V 12 V 60 VGS 6 40 4 20 2 0 0 IF - Drain Current - A 20 VDS 40 60 80 ID = 70 A 0 100 120 140 160 VGS - Gate to Source Voltage - V 25 ISD - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3307 QG - Gate Charge - nC Data Sheet D14129EJ3V0DS 5 2SK3307 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 100 IAS = 45 A EAS =2 02 m J 10 VDD = 30 V RG = 25 Ω VGS = 20 V → 0 V 1 10 µ 100 µ 120 100 80 60 40 20 1m L - Inductive Load - H 6 VDD = 30 V RG = 25 Ω VGS = 20 V → 0 V IAS ≤ 45 A 140 Energy Derating Factor - % IAS - Single Avalanche Current - A 1000 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D14129EJ3V0DS 2SK3307 PACKAGE DRAWING (Unit: mm) TO-3P (MP-88) 3.2±0.2 1.0 15.7 MAX. 4.7 MAX. Drain 2 3 5.45 7.0 Gate Protection Diode 1.0±0.2 0.6±0.1 5.45 Body Diode Gate 19 MIN. 3.0±0.2 1 4.5±0.2 20.0±0.2 6.0 4 2.2±0.2 EQUIVALENT CIRCUIT 1.5 Source 2.8±0.1 1.Gate 2.Drain 3.Source 4.Fin (Drain) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D14129EJ3V0DS 7 2SK3307 • The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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