DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3511 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3511 TO-220AB designed for high current switching applications. 2SK3511-S TO-262 FEATURES 2SK3511-ZJ TO-263 • Super low on-state resistance: 2SK3511-Z TO-220SMD Note RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A) Note TO-220SMD package is produced only • Low Ciss: Ciss = 5900 pF TYP. in Japan. • Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 75 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±83 A ID(pulse) ±260 A Total Power Dissipation (TC = 25°C) PT 100 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 52 A Single Avalanche Energy Note2 EAS 250 mJ Storage Temperature (TO-262) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 → 0 V (TO-263, TO-220SMD) THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 1.25 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15617EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan © 2001 2SK3511 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 75 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA 4.0 V Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance VGS(off) VDS = 10 V, ID = 1 mA 2.0 3.0 | yfs | VDS = 10 V, ID = 42 A 21 45 RDS(on) VGS = 10 V, ID = 42 A S 9.5 12.5 mΩ Input Capacitance Ciss VDS = 10 V 5900 pF Output Capacitance Coss VGS = 0 V 810 pF Reverse Transfer Capacitance Crss f = 1 MHz 400 pF Turn-on Delay Time td(on) VDD = 38 V, ID = 42 A 30 ns VGS = 10 V 21 ns RG = 0 Ω 72 ns 12 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 60 V 100 nC Gate to Source Charge QGS VGS = 10 V 24 nC Gate to Drain Charge QGD ID = 83 A 35 nC VF(S-D) IF = 83 A, VGS = 0 V 1.1 V Reverse Recovery Time trr IF = 83 A, VGS = 0 V 70 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 200 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Data Sheet D15617EJ1V0DS td(on) tr ton td(off) tf toff 2SK3511 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 120 100 100 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 80 60 40 20 0 0 25 50 75 100 125 150 80 60 40 20 0 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 100 ited im V )L 10 (on S RD GS = V at ID(pulse) PW =1 0µ 10 s 0µ s 1m s DC 10 10 m s Power Dissipation Limited 1 0.1 0.1 TC = 25˚C Single Pulse 10 1 VDS - Drain to Source Voltage - V 100 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(DC) 10 Rth(ch-A) = 83.3˚C/W 1 Rth(ch-C) = 1.25˚C/W 0.1 0.01 10 µ Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15617EJ1V0DS 3 2SK3511 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 300 V D S = 10 V Pulsed 250 100 ID - Drain Current - A ID - Drain Current - A VGS = 10 V 200 150 100 10 T A = 150°C 75°C 25°C −55°C 1 50 0.1 0 0 1 2 3 4 5 6 7 1 8 2 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) – Gate Cut-off Voltage - V 100 3.5 3.0 2.5 2.0 1.5 V DS = 10 V ID = 1 mA 0.0 -75 -25 25 75 125 175 10 1 TA = 150°C 75°C 25°C −55°C 0.1 0.01 0.01 0.1 16 14 12 10 VGS = 10 V 6 4 2 0 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ Pulsed 1 ID - Drain Current - A 4 1 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 0.1 7 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 8 6 VDS = 10 V Pulsed Tch - Channel Temperature - °C 18 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4.0 0.5 4 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.0 3 20 Pulsed 18 16 14 12 10 8 ID = 42 A 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V Data Sheet D15617EJ1V0DS 2SK3511 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 25 10000 Pulsed Ciss 20 Ciss, Coss, Crss - Capacitance - pF 15 10 5 VGS = 10 V ID = 42 A 0 -100 1000 Coss Crss 100 V GS = 0 V f = 1 MHz 10 -50 0 50 100 150 200 0.1 1 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS 100 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns tf td(off) td(on) tr 10 VDD = 38 V VGS = 10 V RG = 0 Ω 1 0.1 10 1 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 100 10 VDS - Drain to Source Voltage - V 10 VDD = 60 V 38 V 15 V 80 8 60 6 VGS 40 4 20 2 VDS ID = 83 A 0 100 0 20 40 60 80 100 0 120 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 100 Pulsed trr - Reverse Recovery Time - ns ISD - Diode Forward Current - A 100 10 VGS = 10 V 1 0V 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VSD - Source to Drain Voltage - V VGS = 0 V di/dt = 100 A/ µs 10 0.1 1 10 100 IF - Drain Current - A Data Sheet D15617EJ1V0DS 5 2SK3511 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 1000 160 VDD = 35 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 52 A 100 Energy Derating Factor - % IAS - Single Avalanche Current - A 140 IAS = 52 A E AS = 250 mJ 10 VDD = 35 V R G = 25 Ω VGS = 20 → 0 V 1 0.001 0.01 0.1 1 10 100 80 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - mH 6 120 Data Sheet D15617EJ1V0DS 2SK3511 PACKAGE DRAWINGS (Unit: mm) 1) TO-220 (MP-25) 2) TO-262 (MP-25 Fin Cut) 3.0±0.3 φ 3.6±0.2 1.0±0.5 4.8 MAX. 10.6 MAX. 10 TYP. 1.3±0.2 4 4 1 2 3 0.5±0.2 0.75±0.1 2.54 TYP. 12.7 MIN. 1.3±0.2 12.7 MIN. 6.0 MAX. 1 2 3 1.3±0.2 2.8±0.2 1.3±0.2 8.5±0.2 15.5 MAX. 5.9 MIN. 10.0 TYP. 4.8 MAX. 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) TO-263 (MP-25ZJ) Note 4) TO-220SMD (MP-25Z) 4.8 MAX. 10 TYP. 4.8 MAX. 10 TYP. 1.3±0.2 1.3±0.2 4 2.8±0.2 2.54 TYP. 1.4±0.2 TY R 0.8 T . YP 0.5±0.2 0.75±0.3 2.54 TYP. 8.5±0.2 3 3.0±0.5 0.7±0.2 2.54 TYP. P. R 0.5 2 P. TY P. R 5 TY 0. R 0.8 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8±0.2 1.4±0.2 1 1.1±0.4 8.5±0.2 3 5.7±0.4 2 1.0±0.5 4 1.0±0.5 1 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note This Package is only produced in Japan. EQUIVALENT CIRCUIT Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. Drain When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Body Diode Gate Gate Protection Diode Source Data Sheet D15617EJ1V0DS 7 2SK3511 • The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. 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