DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3480 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3480 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3480 TO-220AB 2SK3480-S TO-262 2SK3480-ZJ TO-263 2SK3480-Z TO-220SMDNote designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = 10 V, ID = 25 A) Note TO-220SMD package is produced only RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 25 A) in Japan. • Low Ciss: Ciss = 3600 pF TYP. (TO-220AB) • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 100 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±50 A ID(pulse) ±100 A Total Power Dissipation (TC = 25°C) PT1 84 W Total Power Dissipation (TA = 25°C) PT2 1.5 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 34 A Single Avalanche Energy Note2 EAS 116 mJ Storage Temperature (TO-262) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% (TO-263, TO-220SMD) 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 1.48 °C/W Channel to Ambient Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15078EJ1V0DS00 (1st edition) Date Published December 2001 NS CP(K) Printed in Japan © 2001 2SK3480 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA 2.5 V Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 | yfs | VDS = 10 V, ID = 25 A 17 34 RDS(on)1 VGS = 10 V, ID = 25 A 25 31 mΩ RDS(on)2 VGS = 4.5 V, ID = 25 A 27 36 mΩ S Input Capacitance Ciss VDS = 10 V 3600 pF Output Capacitance Coss VGS = 0 V 360 pF Reverse Transfer Capacitance Crss f = 1 MHz 190 pF Turn-on Delay Time td(on) VDD = 50 V, ID = 25 A 15 ns VGS = 10 V 11 ns RG = 0 Ω 68 ns 6.0 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 80 V 74 nC Gate to Source Charge QGS VGS = 10 V 10 nC Gate to Drain Charge QGD ID = 50 A 20 nC VF(S-D) IF = 50 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 50 A, VGS = 0 V 70 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 180 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Data Sheet D15078EJ1V0DS td(on) tr ton td(off) tf toff 2SK3480 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 20 40 60 80 100 120 140 120 100 80 60 40 20 0 160 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA ID(pulse) 100 PW 10 0 1 ID(DC) 10 m d m ite V) P D s im 10 Limowe C L rD n) S = i t o ed is ( G S s ipa RDat V tio ( n 10 µs = 10 µs s 1 TC = 25˚C Single Pulse 0.1 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A 1000 100 Rth(ch-A) = 83.3˚C/W 10 1 Rth(ch-C) = 1.48˚C/W 0.1 0.01 10 µ TC = 25˚C Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15078EJ1V0DS 3 2SK3480 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 100 ID - Drain Current - A ID - Drain Current - A 1000 TA = −40˚C 25˚C 75˚C 150˚C 10 1 80 VGS =10 V 4.5 V 60 40 20 1 2 VDS = 10 V 4 5 3 3 2 4 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 VDS = 10 V Pulsed 10 TA = 150˚C 75˚C 25˚C −40˚C 1 0.1 0.01 0.01 0.1 1 10 100 50 Pulsed 40 30 ID = 50 A 25 A 20 10 0 5 10 4.0 80 60 40 VGS = 4.5 V 0 0.1 10 V 1 10 20 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 20 15 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 1 VDS - Drain to Source Voltage - V VGS(off) - Gate Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 0 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 Pulsed 0 RDS(on) - Drain to Source On-state Resistance - mΩ | yfs | - Forward Transfer Admittance - S 0.1 100 VDS = 10 V ID = 1 mA 3.0 2.0 1.0 0 −50 0 50 100 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet D15078EJ1V0DS 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 70 1000 Pulsed 60 50 40 VGS = 4.5 V 10 V 30 20 10 ID = 25 A 0 −50 100 50 0 ISD - Diode Forward Current - A 100 VGS = 10 V 0V 10 1 0.1 0 150 Tch - Channel Temperature - ˚C SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switching Time - ns 10000 Ciss 1000 Coss Crss 100 VGS = 0 V f = 1 MHz 10 0.01 0.1 1 10 td(off) 100 td(on) 10 tr tf VDD = 50 V VGS = 10 V RG = 0 Ω 1 0.1 100 REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 10 100 1000 di/dt = 100 A/ns VGS = 0 V VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 10 1 ID - Drain Current - A VDS - Drain to Source Voltage - V 100 10 1 0.1 1.5 1.0 0.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF Pulsed 80 8 VDD = 80 V 50 V 20 V 60 VGS 6 40 4 20 2 VDS ID = 83 A 0 1 10 100 0 20 40 60 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3480 0 80 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D15078EJ1V0DS 5 2SK3480 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 160 100 IAS = 34 A EAS 10 VDD = 50 V VGS = 20 → 0 V RG = 25 Ω 1 Starting Tch = 25˚C 0.01 0.1 =1 16 mJ 120 100 80 60 40 20 1 L - Inductive Load - mH 6 VDD = 50 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 34 A 140 Energy Derating Factor - % IAS - Single Avalanche Current - A 1000 10 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D15078EJ1V0DS 2SK3480 PACKAGE DRAWINGS (Unit: mm) TO-220AB(MP-25) 2) TO-262(MP-25 Fin Cut) φ 3.6±0.2 1.0±0.5 4.8 MAX. 10.6 MAX. 3.0±0.3 10 TYP. 1.3±0.2 4 1.3±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 3 1.3±0.2 12.7 MIN. 6.0 MAX. 1 2 3 2 1.3±0.2 8.5±0.2 4 1 4.8 MAX. 12.7 MIN. 5.9 MIN. 10.0 TYP. 15.5 MAX. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note TO-263 (MP-25ZJ) 4) TO-220SMD(MP-25Z) 4.8 MAX. 10 TYP. 4.8 MAX. 10 TYP. 1.3±0.2 1.3±0.2 4 1.4±0.2 0.7±0.2 R 0.5 2.54 TYP. 2.8±0.2 2.54 TYP. TY R 0.8 1.4±0.2 . P TY 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3 P. . TY R TYP 5 . 0 R .8 2.54 TYP. 0 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Remark Drain 0.75±0.3 2.54 TYP. 2 8.5±0.2 1 P. 2.8±0.2 3 1.1±0.4 8.5±0.2 2 5.7±0.4 1 1.0±0.5 4 1.0±0.5 3) 2.8±0.2 2.54 TYP. 3.0±0.5 1) The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, Body Diode Gate Gate Protection Diode an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Source Data Sheet D15078EJ1V0DS 7 2SK3480 • The information in this document is current as of December, 2001. The information is subject to change without notice. For actual design-in, refer to the latest p ublications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. 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