2SA1577 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 Complements of the 2SC4097 Large IC, MAX=-500mA Low VCE(sat). Ideal for low-voltage operation. A L 3 3 CLASSIFICATION OF hFE 1 1 Product-Rank 2SA1577-P 2SA1577-Q 2SA1577-R Range 82~180 120~270 180~390 Marking HP HQ HR MPQ SOT-323 2 K E F H G REF. LeaderSize 3K 2 D PACKAGE INFORMATION Package C B Top View 7’ inch Millimeter Min. Max. J REF. Millimeter Min. Max. 0.100 REF. A 1.80 2.20 G B 1.80 2.45 H C 1.15 1.35 J D E F 0.80 1.20 0.20 1.10 1.40 0.40 K L 0.525 REF. 0.08 0.25 0.650 TYP. Collector 3 1 Base 2 Emitter MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage V(BR)CBO -40 V Collector-Emitter Voltage V(BR)CEO -32 V Emitter-Base Voltage V(BR)EBO -5 V IC -500 mA PC 200 mW TJ, TSTG 150, -55 ~ 150 °C Collector Current Collector Power Dissipation Junction & Storage temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage Parameter V(BR)CBO -40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO -32 - - V IC=-1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -5 - - V IE=-100µA, IC=0 Collector Cut-Off Current ICBO - - -1 µA VCB=-20V, IE=0 Emitter Cut-off Current IEBO -1 µA VEB=-4V, IC=0 DC Current Gain hFE 82 - 390 Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 07-Jan-2011 Rev. B Test Conditions IC=-100µA, IE=0 VCE=-3V, IC=-10mA VCE(sat) - - -0.4 V fT - 200 - MHz Cob - 7 - pF IC=-100mA, IB=-10mA VCE=-5V, IC=-20mA, f=100MHz VCB=-10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 2 2SA1577 Elektronische Bauelemente -0.5A, -40V PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 07-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 2