2SA1673 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388) µA V IEBO VEB=–6V –10max µA V V(BR)CEO –15 A hFE –180min IC=–50mA VCE=–4V, IC=–3A 50min∗ V –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V PC 85(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C Tj Tstg ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –1 1 0.6typ 0.9typ 0.2typ –50mA –5 I B =–20mA 0 0 –1 –2 –3 –1 I C =–10A 0 –4 0 –0.5 –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 Typ 100 50 125˚C 25˚C 100 –30˚C 50 20 –0.02 –5 –10 –15 f T – I E Characteristics (Typical) –0.1 –0.5 –1 –5 –10 –15 1 10 100 P c – T a Derating m 0m s s s C –10 –100 Collector-Emitter Voltage V C E (V) –200 nk –0.1 –3 si 10 at –0.2 he Without Heatsink Natural Cooling ite –1 60 fin –2 80 In Collecto r Cur rent I C (A) D –5 –0.5 1000 2000 Time t(ms) ith 10 26 0.1 W 20 Emitter Current I E (A) 0.5 M aximu m Power Dissip ation P C (W) 10 10 –10 Typ 1 1 100 3m 0.1 3 –40 30 –2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =–12V) 0 0.02 –1 Collector Current I C (A) Collector Current I C (A) Cut- off F req uency f T (MH Z ) Transient Thermal Resistance DC Cur rent Gain h FE DC Cur rent Gain h F E 300 –1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –5 –5A Collector-Emitter Voltage V C E (V) 10 –0.02 –10 mp) Temp ) –0 .1 A –2 (V C E =–4V) e Te A E –15 Cas – 0 .2 –10 C Weight : Approx 6.5g a. Part No. b. Lot No. – 3 ˚C ( A 3.35 I C – V BE Temperature Characteristics (Typical) 125 –0.4 0.65 +0.2 -0.1 1.5 V CE ( sat ) – I B Characteristics (Typical) Collector Current I C (A) 6A 4.4 B θ j - a (˚ C/W) –0. Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) A 5.45±0.1 1.5 RL (Ω) –1 0.8 2.15 1.05 +0.2 -0.1 VCC (V) –15 1.75 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 3.45 ±0.2 ø3.3±0.2 a b 16.2 IB 5.5±0.2 3.0 –6 IC 15.6±0.2 23.0±0.3 VEBO 0.8±0.2 –10max 5.5 VCB=–180V 1.6 –180 ICBO 3.3 VCEO Unit p) V Ratings ase Tem –180 External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Symbol –30˚C (C VCBO ■Electrical Characteristics (Case Unit 25˚C Ratings Symbol 9.5±0.2 ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 40 20 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150