2SA673, 2SA673A Silicon PNP Epitaxial REJ03G0626-0200 (Previous ADE-208-125) Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SC1213 and 2SC1213A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 4 Symbol VCBO VCEO VEBO IC PC Tj 2SA673 –35 –35 –4 –500 400 150 2SA673A –50 –50 –4 –500 400 150 Unit V V V mA mW °C Tstg –55 to +150 –55 to +150 °C 2SA673, 2SA673A Electrical Characteristics (Ta = 25°C) Item Symbol 2SA673 Typ — Max — 2SA673A Min Typ Max –50 — — Collector to base breakdown voltage V(BR)CBO Min –35 Collector to emitter breakdown voltage V(BR)CEO –35 — — –50 — Emitter to base breakdown voltage Collector cutoff current V(BR)EBO –4 — — –4 ICBO Collector to emitter saturation voltage DC current transfer ratio VCE(sat) — — — –0.2 –0.5 –0.6 hFE*1 60 — DC current transfer ratio hFE 10 Base to emitter voltage VBE — 100 to 200 160 to 320 Rev.2.00 Aug 10, 2005 page 2 of 4 Test conditions V IC = –10 µA, IE = 0 — V IC = –1 mA, RBE = ∞ — — V IE = –10 µA, IC = 0 — — — –0.2 –0.5 –0.6 µA V VCB = –20 V, IE = 0 320 60 — 320 — — 10 — — –0.64 — — –0.64 — Notes: 1. The 2SA673 and 2SA673A are grouped by hFE as follows. 2. Pulse test B C D 60 to 120 Unit IC = –150 mA, 2 IB = –15 mA* VCE = –3 V, IC = –10 mA VCE = –3 V, 2 IC = –500 mA* V VCE = –3 V, IC =–10 mA 2SA673, 2SA673A Main Characteristics Typical Output Characteristics (1) –100 50 100 –0.5 –0.4 –40 –0.3 –0.2 –20 –0.1 mA IB = 0 –2 Typical Output Characteristics (2) –6 –8 –10 Typical Transfer Characteristics –500 –400 –300 –2 –200 –1 mA –100 PC = 400 mW IB = 0 –2 VCE = –3 V –10 Ta = 75° C 25 –25 –7 –6 –5 –4 –3 Collector Current IC (mA) –30 0 –3 –1.0 –0.3 –4 –6 –8 0 –10 DC Current Transfer Ratio vs. Collector Current Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) 150 VCE = –3 V 75 50 100 25 0 Ta 50 = °C –25 0 –2 –5 –10 –20 –50 –100 –200 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 4 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) DC Current Transfer ratio hFE –4 Collector to Emitter Voltage VCE (V) Ambient Temperature Ta (°C) Collector Current IC (mA) –0.6 –60 0 150 W m 0 –0.7 0 200 –80 –0.9 –0.8 40 400 0 –1. = Collector Current IC (mA) 600 PC Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve –500 240 200 VCE = –3 V 160 120 80 40 0 –5 –10 –20 –50 –100 –200 Collector Current IC (mA) –500 2SA673, 2SA673A Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-43A PRSS0003DA-A TO-92(1) / TO-92(1)V 0.25g Unit: mm 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SA673BTZ-E 2SA673CTZ-E 2SA673DTZ-E 2SA673ABTZ-E 2SA673ACTZ-E 2SA673ADTZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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