NSTB1002DXV5T1G, NSTB1002DXV5T5G Preferred Devices Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSTB1002DXV5T1G series, two complementary devices are housed in the SOT−553 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch Tape and Reel • These are Pb−Free Devices 2 R1 1 R2 Q2 Q1 R1 4 5 5 1 SOT−553 CASE 463B MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 MARKING DIAGRAM and Q2, − minus sign for Q1 (PNP) omitted) Value 5 Symbol Q1 Q2 Unit Collector-Base Voltage VCBO −40 50 Vdc Collector-Emitter Voltage VCEO −40 50 Vdc IC −200 100 mAdc Rating Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Junction and Storage Temperature U9 MG G 1 U9 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Symbol Max Unit PD 357 (Note 1) 2.9 (Note 1) mW mW/°C RqJA 350 (Note 1) °C/W Symbol Max Unit NSTB1002DXV5T1G SOT−553 4 mm pitch (Pb−Free) 4000/Tape & Reel PD 500 (Note 1) 4.0 (Note 1) mW mW/°C NSTB1002DXV5T5G SOT−553 2 mm pitch (Pb−Free) 8000/Tape & Reel RqJA 250 (Note 1) °C/W TJ, Tstg −55 to +150 °C ORDERING INFORMATION Device Package Shipping Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 0 1 Publication Order Number: NSTB1002DXV5/D NSTB1002DXV5T1G, NSTB1002DXV5T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (Note 2) V(BR)CEO −40 − Vdc Collector −Base Breakdown Voltage V(BR)CBO −40 − Vdc Emitter −Base Breakdown Voltage V(BR)EBO −5.0 − Vdc IBL − −50 nAdc ICEX − −50 nAdc 60 80 100 60 30 − − 300 − − − − −0.25 −0.4 −0.65 − −0.85 −0.95 Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) − Vdc Vdc SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product fT 250 − MHz Output Capacitance Cobo − 4.5 pF Input Capacitance Cibo − 10.0 pF Input Impedance (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hie 2.0 12 kW Voltage Feedback Ratio (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hre 0.1 10 X 10− 4 Small −Signal Current Gain (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hfe 100 400 − Output Admittance (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hoe 3.0 60 mmhos Noise Figure (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 kW, f = 1.0 kHz) nF − 4.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc) td − 35 Rise Time (IC = −10 mAdc, IB1 = −1.0 mAdc) tr − 35 Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc) ts − 225 (IB1 = IB2 = −1.0 mAdc) tf − 75 Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) IEBO − − 0.1 mAdc Fall Time ns ns Q2 TRANSISTOR: NPN OFF CHARACTERISTICS 2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%. http://onsemi.com 2 NSTB1002DXV5T1G, NSTB1002DXV5T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 80 140 − VCE(SAT) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor R1 33 47 61 kW Resistor Ratio R1/R2 0.8 1.0 1.2 ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) 2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%. PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 −50 RqJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 3 150 NSTB1002DXV5T1G, NSTB1002DXV5T5G TYPICAL ELECTRICAL CHARACTERISTICS — PNP TRANSISTOR h FE , DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 −55 °C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 2. DC Current Gain http://onsemi.com 4 20 30 50 70 100 200 NSTB1002DXV5T1G, NSTB1002DXV5T5G 10 1000 VCE = 10 V IC/IB = 10 hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR 1 25°C TA=−25°C 75°C 0.1 0.01 0 25°C −25°C 100 10 50 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 10 IC, COLLECTOR CURRENT (mA) 1 Figure 3. VCE(sat) versus IC Figure 4. DC Current Gain 1 100 f = 1 MHz IE = 0 mA TA = 25°C IC, COLLECTOR CURRENT (mA) 0.4 TA=−25°C 10 1 0.1 0.01 0.2 0 25°C 75°C 0.6 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 VO = 5 V 0 Figure 5. Output Capacitance 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 Figure 6. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 0.8 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 7. Input Voltage versus Output Current http://onsemi.com 5 50 10 NSTB1002DXV5T1G, NSTB1002DXV5T5G PACKAGE DIMENSIONS SOT−553 XV5 SUFFIX CASE 463B−01 ISSUE B D −X− 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 4 1 2 E −Y− 3 b e HE c 5 PL 0.08 (0.003) M MILLIMETERS NOM MAX 0.55 0.60 0.22 0.27 0.13 0.18 1.60 1.70 1.20 1.30 0.50 BSC 0.10 0.20 0.30 1.50 1.60 1.70 DIM A b c D E e L HE X Y MIN 0.50 0.17 0.08 1.50 1.10 INCHES NOM 0.022 0.009 0.005 0.063 0.047 0.020 BSC 0.004 0.008 0.059 0.063 MIN 0.020 0.007 0.003 0.059 0.043 MAX 0.024 0.011 0.007 0.067 0.051 0.012 0.067 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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