ETC 2SB819Q

Transistor
2SB0819 (2SB819)
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD1051
Unit: mm
6.9±0.1
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–40
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–3
A
Collector current
IC
–1.5
A
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
1cm2
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
1.0
4.5±0.1
4.1±0.2
7
3
2
2.5
1:Base
2:Collector
3:Emitter
1
2.5
EIAJ:SC–71
M Type Mold Package
or more, and the board
(Ta=25˚C)
Parameter
Symbol
ICBO
Collector cutoff current
0.45±0.05
(Ta=25˚C)
Parameter
■ Electrical Characteristics
0.
0.55±0.1
■ Absolute Maximum Ratings
*
0.85
1.25±0.05
●
High collector to emitter voltage VCEO.
Large collector power dissipation PC.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0
R
●
1.0±0.1
●
0.4
■ Features
2.5±0.1
1.5 R0.9
R0.9
2.4±0.2 2.0±0.2 3.5±0.1
1.5
Conditions
min
typ
max
Unit
VCB = –20V, IE = 0
–1
µA
ICEO
VCE = –10V, IB = 0
–100
µA
Emitter cutoff current
IEBO
VEB = –5V, IC = 0
–10
µA
Collector to base voltage
VCBO
IC = –1mA, IE = 0
–50
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–40
V
*1
Forward current transfer ratio
hFE
Collector to emitter saturation voltage
VCE(sat)
VCE = –5V, IC =
–1A*2
80
220
IC = –1.5A, IB = –0.15A*2
–1
–0.2A*2
Base to emitter saturation voltage
VBE(sat)
IC = –2A, IB =
Transition frequency
fT
VCB = –5V, IE = 0.5A, f = 200MHz
150
–1.5
Collector output capacitance
Cob
VCB = –20V, IE = 0, f = 1MHz
45
FE
V
MHz
pF
*2
*1h
V
Pulse measurement
Rank classification
Rank
Q
R
hFE
80 ~ 160
120 ~ 220
Note.) The Part number in the Parenthesis shows conventional part number.
1
Transistor
2SB0819
IC — VCE
1.0
0.8
0.6
0.4
Ta=25˚C
–35mA
–3.0
–30mA
–2.5
–25mA
–2.0
–20mA
–1.5
–15mA
–10mA
–1.0
– 0.5
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
–2
–4
–3
Ta=–25˚C
–1
75˚C
– 0.3
– 0.1
– 0.03
–6
–8
–10
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
Ta=75˚C
25˚C
200
–25˚C
100
–1
–3
200
160
120
80
40
0
10
–10
Collector current IC (A)
Cob — VCB
30
ICEO — Ta
30
–30
–100
Collector to base voltage VCB (V)
–50
VCE=–12V
300
ICEO (Ta)
ICEO (Ta=25˚C)
60
1000 3000 10000
Ta=25˚C
Collector to emitter voltage VCER (V)
90
300
1000
–60
120
100
Emitter current IE (mA)
VCER — RBE
150
–40
–30
–20
–10
0
0.001
–10
VCB=–5V
Ta=25˚C
400
300
–3
240
0
– 0.01 – 0.03 – 0.1 – 0.3
–10
IE=0
f=1MHz
Ta=25˚C
–1
Collector current IC (A)
fT — I E
500
Collector current IC (A)
–10
–25˚C
VCE=–5V
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
–10
–3
Ta=75˚C
25˚C
– 0.3
600
IC/IB=10
–30
0
–1
–1
hFE — IC
–100
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–3
Collector to emitter voltage VCE (V)
VBE(sat) — IC
25˚C
–10
Transition frequency fT (MHz)
40
–30
– 0.03
0
20
IC/IB=10
– 0.1
–5mA
0.2
0
Collector output capacitance Cob (pF)
–100
IB=–40mA
–3.5
Collector current IC (A)
Collector power dissipation PC (W)
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
0
2
VCE(sat) — IC
–4.0
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
1.2
100
30
10
3
1
0.01
0.1
1
10
Base to emitter resistance RBE (kΩ)
0
20
40
60
80
100
120
Ambient temperature Ta (˚C)
2SB0819
Transistor
Area of safe operation (ASO)
–10
–3
Single pulse
Ta=25˚C
ICP
Collector current IC (A)
IC
t=10ms
–1
t=1s
– 0.3
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
– 0.1 – 0.3
–1
–3
–10
–30
–100
Collector to emitter voltage VCE (V)
3
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2001 MAR