NTE218 Silicon PNP Transistor Audio Power Output Description: The NTE218 is ideal for use as a driver, switch and medium–power amplifier applications. This device features: Features: D Low Saturation Voltage – 0.6VCE(sat) @ IC = 1A D High Gain Characteristics – hFE @ IC = 250mA: 30–100 D Excellent Safe Area Limits Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.143W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Note 1 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%. Electrical Characteristics: (TC = +25°C unless otherwise sepcified) Parameter Symbol Test Conditions Min Typ Max Unit 80 – – V OFF Characteristics Colector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 Emitter Cutoff Current IEBO VEB = 7V – – 0.5 mA Collector Cutoff Current ICEX VCE = 80V, VBE(off) = 1.5V – – 100 µA VCE = 60V, VBE(off) = 1.5V, TC = +150°C – – 1.0 mA ICEO VCE = 60V, IB = 0 – – 1.0 mA ICBO VCB = 80V, IE = 0 1 – 100 µA Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise sepcified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 1V, IC = 100mA 40 – – VCE = 1V, IC = 250mA 30 – 100 VCE = 1V, IC = 500mA 20 – – VCE = 1V, IC = 1A 10 – – IC = 1A, IB = 125mA – – 0.6 V VCE = 1V, IC = 250mA – – 1.0 V VCE = 1V, IC = 250mA, f = 1MHz 3 – – MHz pF ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Voltage hFE VCE(sat) VBE Transient Characteristics Current Gain Bandwidth Product fT Common Base Output Capacitance Cob VCE = 10V, IC = 0, f = 100kHz – – 100 Small–Signal Current Gain hfe VCE = 10V, IC = 50mA, f = 1kHz 25 – – Note 1 Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%. .295 (7.5) .485 (12.3) Dia .062 (1.57) .031 (0.78) Dia .960 (24.3) .360 (9.14) Min Base .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Collector/Case Emitter