NTE2661 Silicon NPN Transistor Horizontal Deflection Output for HDTV Features: D High Speed: tf = 0.15µs Typ D High Breakdown Voltage: VCBO = 1700V D Low Saturation Voltage: VCE(sat) = 3V Max Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Collector−to−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Emitter−to−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 1700V, IE = 0 − − 1.0 mA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 10 µA 600 − − V VCE = 5V, IC = 2A 10 − 30 − VCE = 5V, IC = 11A 4.5 − 8.5 Collector−Emitter Breakdown Voltage DC Current Gain V(BR)CEO IC = 10mA, IB = 0 hFE Collector−Emitter Saturation Voltage VCE(sat) IC = 11A, IB = 2.75A − − 3 V Base−Emitter Saturation Voltage VBE(sat) IC = 11A, IB = 2.75A − 1.0 1.3 V fT VCE = 10V, IE = 0.1A − 1.7 − MHz Transition Frequency Collector Output capacitance Cob VCB = 10V, IE = 0, f = 1MHz − 290 − pF Storage Time tstg IC(peak) = 10A, IB1 = 1.8A, fH = 64kHz − 2.5 4.0 µs − 0.15 0.3 µs Fall Time tf .810 (20.57) Max .204 (5.2) .236 (6.0) 1.030 (26.16) .137 (3.5) Dia Max .098 (2.5) .215 (5.45) .787 (20.0) .040 (1.0) B C .023 (0.6) E NOTE: Pin2 connected to heatsink