NTE NTE5517

NTE5514 thru NTE5516
Silicon Controlled Rectifier (SCR)
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM
NTE5514 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5515 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5516 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Reverse Voltage (TJ = +100°C), VRRM
NTE5514 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5515 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5516 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . 200A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Operating Temperatue Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3°C/W
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Peak Off–State Current
IDRM,
IRRM
TJ = +100°C, Gate Open,
VDRM and VRRM = Max. Rating
–
–
2.0
mA
Maximum On–State Voltage (Peak)
VTM
TC = +25°C
–
–
1.9
V
Peak On–State Current
ITM
–
–
40
A
DC Holding Current
IH
TC = +25°C, Gate Open
–
–
50
mA
DC Gate–Trigger Current
IGT
Anode Voltage = 12V, RL = 30Ω, TC = +25°C
–
–
25
mA
DC Gate–Trigger Voltage
VGT
Anode Voltage = 12V, RL = 30Ω, TC = +25°C
–
–
2.0
V
td + tr, IGT = 150mA
–
2.5
–
µs
TC = +100°C, Gate Open
–
100
–
V/µs
Gate Controlled Turn–On Time
Critical Rate–of–Rise of
Off–State Voltage
tgt
Critical
dv/dt
.155 (3.93) Max
Cathode
Gate
.085
(2.15)
.063 (1.6)
.767
(19.5)
Max
.380
(9.65)
Max
.475 (12.09)
Max
Anode
.505 (12.85)
Max