NTE85 Silicon NPN Transistor General Purpose Amplifier Applications: D Medium Power Amplifiers D Class B Audio Outputs D Hi–Fi Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W Note 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. Note 2. These ratings are based on a maximum junction temperature of 150°C. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Emitter Breakdown V(BR)CEO IC = 10mA, IB = 0, Note 3 Voltage Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 30 – – V 50 – – V Emitter–Base Breakdown Voltage 5.0 – – V V(BR)EBO IE = 100µA, IC = 0 Collector Cutoff Voltage ICBO VCB = 20V, IE = 0 – – 100 nA Emitter Cutoff Current IEBO VBE = 3V, IC = 0 – – 100 nA Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter DC Current Gain Symbol Test Conditions Min Typ Max hFE VCE = 2V, IC = 50mA, Note 3 100 – 300 IC = 100mA, VCE = 2V, Note 3 IC = 100mA, IB = 5mA, Note 3 IC = 50mA, VCE = 2V 0.5 – 1.0 V – – 0.6 V 100 – – MHz – – 12 pF Base–Emitter ON Voltage VBE(on) Collector–Emitter Saturation Voltage VCE(sat) Current Gain–Bandwidth Product fT Collector–Base Capacitance Ccb VCB = 10V, IE = 0, f = 1MHz Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max Unit