85

NTE85
Silicon NPN Transistor
General Purpose Amplifier
TO−92 Type Package
Applications:
D Medium Power Amplifiers
D Class B Audio Outputs
D Hi−Fi Drivers
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Note 1. These ratings are limiting values above which the serviceability of any semiconductor may
be impaired.
Note 2. These ratings are based on a maximum junction temperature of 150C.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Min
Typ
Max
Unit
30
−
−
V
Collector−Base Breakdown Voltage V(BR)CBO IC = 100A, IE = 0
50
−
−
V
Emitter−Base Breakdown Voltage
5.0
−
−
V
Collector−Emitter Breakdown
Voltage
Symbol
Test Conditions
V(BR)CEO IC = 10mA, IB = 0, Note 3
V(BR)EBO IE = 100A, IC = 0
Collector Cutoff Current
ICBO
VCB = 20V, IE = 0
−
−
100
nA
Emitter Cutoff Current
IEBO
VBE = 3V, IC = 0
−
−
100
nA
Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%
Rev. 12−14
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
DC Current Gain
Symbol
Test Conditions
Min
Typ
Max
hFE
VCE = 2V, IC = 50mA, Note 3
100
−
300
Unit
Base−Emitter ON Voltage
VBE(on)
IC = 100mA, VCE = 2V,
Note 3
0.5
−
1.0
V
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 100mA, IB = 5mA,
Note 3
−
−
0.6
V
Current Gain−Bandwidth Product
fT
100
−
−
MHz
−
−
12
pF
Collector−Base Capacitance
Ccb
IC = 50mA, VCE = 2V
VCB = 10V, IE = 0, f = 1MHz
Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
E C B
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max