ETC NTMSD3P102R2/D

NTMSD3P102R2
Product Preview
FETKY
P–Channel Enhancement–Mode
Power MOSFET and Schottky Diode
Dual SO–8 Package
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Features
• High Efficiency Components in a Single SO–8 Package
• High Density Power MOSFET with Low RDS(on),
MOSFET
–3.05 AMPERES
–20 VOLTS
0.085 @ VGS = –10 V
Schottky Diode with Low VF
• Independent Pin–Outs for MOSFET and Schottky Die
Allowing for Flexibility in Application Use
• Less Component Placement for Board Space Savings
• SO–8 Surface Mount Package,
Mounting Information for SO–8 Package Provided
SCHOTTKY DIODE
1.0 AMPERES
20 VOLTS
470 mV @ IF = 1.0 A
Applications
• DC–DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery–Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Value
Unit
VDSS
VGS
–20
V
20
V
RθJA
PD
ID
ID
IDM
171
0.73
–2.34
–1.87
–8.0
°C/W
W
A
A
A
Thermal Resistance –
Junction–to–Ambient (Note 2.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 4.)
RθJA
PD
ID
ID
IDM
100
1.25
–3.05
–2.44
–12
°C/W
W
A
A
A
62.5
2.0
–3.86
–3.10
–15
°C/W
W
A
A
A
–55 to
+150
°C
140
mJ
Operating and Storage
Temperature Range
A
8
A
S
1
Thermal Resistance –
Junction–to–Ambient (Note 1.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 4.)
Thermal Resistance –
Junction–to–Ambient (Note 3.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 4.)
1.
2.
3.
4.
Symbol
RθJA
PD
ID
ID
IDM
TJ, Tstg
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C (VDD =
–20 Vdc, VGS = –4.5 Vdc, Peak IL =
–7.5 Apk, L = 5 mH, RG = 25 Ω)
EAS
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
G
SO–8
CASE 751
STYLE 18
1
8
2
7
6
3
4
5
C
C
D
D
TOP VIEW
MARKING DIAGRAM
& PIN ASSIGNMENTS
Anode
Anode
Source
Gate
1
8
2
7
3
E3P102
LYWW
4
6
5
Cathode
Cathode
Drain
Drain
(Top View)
E3P102
L
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
°C
260
NTMSD3P102R2
Package
Shipping
SO–8
2500/Tape & Reel
Minimum FR–4 or G–10 PCB, Steady State.
Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Steady State.
Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds.
Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
 Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 0
1
Publication Order Number:
NTMSD3P102R2/D
NTMSD3P102R2
SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VRRM
VR
RθJA
20
V
204
°C/W
Thermal Resistance –
Junction–to–Ambient (Note 6.)
RθJA
122
°C/W
Thermal Resistance –
Junction–to–Ambient (Note 7.)
RθJA
83
°C/W
IO
1.0
A
Peak Repetitive Forward Current
(Note 7.) (Rated VR, Square Wave,
20 kHz, TA = 105°C)
IFRM
2.0
A
Non–Repetitive Peak Surge Current
(Note 7.) (Surge Applied at Rated Load
Conditions, Half–Wave, Single Phase,
60 Hz)
IFSM
20
A
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Thermal Resistance –
Junction–to–Ambient (Note 5.)
Average Forward Current (Note 7.)
(Rated VR, TA = 100°C)
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) *
Characteristic
Symbol
Min
Typ
Max
–20
–
–
–30
–
–
–
–
–
–
–1.0
–25
–
–
–100
–
–
100
–1.0
–
–1.7
3.6
–2.5
–
–
–
0.063
0.090
0.085
0.125
–
5.0
–
Ciss
–
518
750
Coss
–
190
350
Crss
–
5. Minimum FR–4 or G–10 PCB, Steady State.
6. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Steady State.
7. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds.
70
135
Unit
OFF CHARACTERISTICS
V(BR)DSS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = –250 µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = –20 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = –20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate–Body Leakage Current
(VGS = –20 Vdc, VDS = 0 Vdc)
IGSS
Gate–Body Leakage Current
(VGS = +20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
µAdc
nAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = –250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–State Resistance
(VGS = –10 Vdc, ID = –3.05 Adc)
(VGS = –4.5 Vdc, ID = –1.5 Adc)
RDS(on)
Forward Transconductance
(VDS = –15 Vdc, ID = –3.05 Adc)
Vdc
Ω
gFS
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = –16
16 Vd
Vdc, VGS = 0 Vd
Vdc,
f = 1.0 MHz)
Reverse Transfer Capacitance
* Handling precautions to protect against electrostatic discharge is mandatory.
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2
pF
NTMSD3P102R2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) *
Characteristic
Symbol
Min
Typ
Max
Unit
td(on)
–
12
22
ns
tr
–
16
30
td(off)
–
45
80
tf
–
45
80
td(on)
–
16
–
tr
–
42
–
td(off)
–
32
–
tf
–
35
–
Qtot
–
16
25
SWITCHING CHARACTERISTICS (Notes 8. and 9.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = –20 Vdc, ID = –3.05 Adc,
Vdc
VGS = –10 Vdc,
RG = 6.0 Ω)
Fall Time
Turn–On Delay Time
(VDD = –20 Vdc, ID = –1.5 Adc,
VGS = –4.5
4 5 Vdc,
Vdc
RG = 6.0 Ω)
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
(VDS = –20 Vdc,
VGS = –10 Vdc,
ID = –3.05
3 05 Adc)
Ad )
Gate–Source Charge
Gate–Drain Charge
ns
nC
Qgs
–
2.0
–
Qgd
–
4.5
–
VSD
–
–
–0.96
–0.78
–1.25
–
Vdc
trr
–
34
–
ns
ta
–
18
–
tb
–
16
–
QRR
–
0.03
–
BODY–DRAIN DIODE RATINGS (Note 8.)
Diode Forward On–Voltage
(IS = –3.05 Adc, VGS = 0 Vdc)
(IS = –3.05 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = –3.05
3 05 Adc,
Ad VGS = 0 Vdc,
Vd
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
µC
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 8.)
VF
g
Maximum Instantaneous Forward Voltage
IF = 1.0
1 0 Adc
Ad
IF = 2.0 Adc
IR
Maximum Instantaneous Reverse Current
Vd
VR = 20 Vdc
Maximum Voltage Rate of Change
VR = 20 Vdc
8. Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
9. Switching characteristics are independent of operating junction temperature.
* Handling precautions to protect against electrostatic discharge is mandatory.
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3
dV/dt
TJ = 25°C
TJ = 125°C
0.47
0.58
0.39
0.53
TJ = 25°C
TJ = 125°C
0.05
10
10,000
Volts
mA
V/s
NTMSD3P102R2
TYPICAL MOSFET ELECTRICAL CHARACTERISTICS
–ID, DRAIN CURRENT (AMPS)
VGS = –4 V
VGS = –4.6 V
VGS = –6 V
4
VGS = –4.8 V
TJ = 25°C
3
VGS
2
VGS = –3.6 V
VGS = –2.8 V
VGS = –3.2 V
= –5 V
VGS = –2.6 V
VGS = –3 V
1
0
0.25
0.5
0.75
1
1.25
1.5
1.75
TJ = 25°C
2
TJ = –55°C
1
1
2
3
4
5
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
5
4
6
7
8
0.7
ID = –1.5 A
TJ = 25°C
0.6
0.5
0.4
0.3
0.2
0.1
0
2
4
3
5
6
7
–VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
–VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance vs. Gate–to–Source
Voltage
Figure 4. On–Resistance vs. Gate–to–Source
Voltage
0.25
TJ = 25°C
0.2
VGS = –4.5 V
0.15
VGS = –10 V
0.1
0.05
1
TJ = 100°C
3
–VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID = –3.05 A
TJ = 25°C
3
4
–VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.7
0
VDS > = –10 V
5
0
2
2
3
4
5
6
RDS(on), DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
VGS = –4.4 V
VGS = –8 V
5
0
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
6
VGS = –10 V
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
–ID, DRAIN CURRENT (AMPS)
6
1.6
1.4
ID = –3.05 A
VGS = –10 V
1.2
1
0.8
0.6
–50
–25
0
25
50
75
100
125
–ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance vs. Drain Current and
Gate Voltage
Figure 6. On Resistance Variation with
Temperature
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4
150
NTMSD3P102R2
10000
VDS = 0 V
1200
C, CAPACITANCE (pF)
IDSS, LEAKAGE (nA)
VGS = 0 V
TJ = 150°C
1000
TJ = 125°C
100
VGS = 0 V
Ciss
1000
800
Ciss
Crss
600
Coss
400
Crss
200
TJ = 25°C
0
10
10
4
8
6
12
10
16
14
18
20
0
5
10
–VDS
15
–VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
GATE–TO–SOURCE OR DRAIN–TO–SOURCE
VOLTAGE (VOLTS)
Figure 7. Drain–to–Source Leakage Current
vs. Voltage
Figure 8. Capacitance Variation
20
24 1000
12
QT
10
VDS = –20 V
ID = –3.05 A
VGS = –10 V
20
VDS
8
16
VGS
12
6
Q1
4
tf
tr
td(on)
4
ID = –3.05 A
TJ = 25°C
0
2
4
6
10
8
12
0
16
14
1
10
1
100
Qg, TOTAL GATE CHARGE (nC)
RG, GATE RESISTANCE (Ω)
Figure 9. Gate–to–Source and
Drain–to–Source Voltage vs. Total Charge
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
3
100
tr
tf
1
10
IS, SOURCE CURRENT (AMPS)
VDS = –20 V
ID = –1.5 A
VGS = –4.5 V
10
td(off)
10
8
Q2
2
0
100
1000
t, TIME (ns)
5
–VGS
t, TIME (ns)
–VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
2
td(off)
td(on)
100
VGS = 0 V
TJ = 25°C
2.5
2
1.5
1
0.5
0
0.2
0.4
0.6
0.8
1
RG, GATE RESISTANCE (Ω)
–VSD, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
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1.2
NTMSD3P102R2
di/dt
IS
ta
trr
tb
TIME
0.25 IS
tp
IS
Figure 13. Diode Reverse Recovery Waveform
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE
1.0
D = 0.5
0.2
0.1
0.1
Normalized to RθJA at Steady State (1″ pad)
Chip
Junction 2.32 Ω
18.5 Ω
50.9 Ω
37.1 Ω
56.8 Ω
0.05
0.02
0.01
1E–03
0.0014 F
0.01
0.0073 F
0.022 F
0.105 F
0.484 F
3.68 F
Ambient
Single Pulse
1E–02
24.4 Ω
1E–01
1E+00
1E+01
t, TIME (s)
Figure 14. FET Thermal Response
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6
1E+02
1E+03
NTMSD3P102R2
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
10
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
TJ = 125°C
1.0
85°C
25°C
–40°C
0.1
TJ = 125°C
85°C
1.0
25°C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
85°C
1E–4
1E–5
25°C
1E–6
1E–7
15
20
IR, MAXIMUM REVERSE CURRENT (AMPS)
IR , REVERSE CURRENT (AMPS)
TJ = 125°C
1E–3
10
1E–3
1E–4
25°C
1E–5
1E–6
0
5.0
IO, AVERAGE FORWARD CURRENT (AMPS)
C, CAPACITANCE (pF)
15
10
20
Figure 18. Maximum Reverse Current
TYPICAL CAPACITANCE AT 0 V = 170 pF
100
10
15
1.4
VR, REVERSE VOLTAGE (VOLTS)
1000
10
1.2
TJ = 125°C
1E–2
Figure 17. Typical Reverse Current
5.0
1.0
1E–1
VR, REVERSE VOLTAGE (VOLTS)
0
0.8
Figure 16. Maximum Forward Voltage
1E–2
5.0
0.6
VF, MAXIMUM INSTANTANEOUS
FORWARD VOLTAGE (VOLTS)
Figure 15. Typical Forward Voltage
0
0.4
20
1.6
dc
FREQ = 20 kHz
1.4
1.2
SQUARE WAVE
1.0
Ipk/Io = 0.8
Ipk/Io = 5.0
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
0
VR, REVERSE VOLTAGE (VOLTS)
20
40
60
80
100
120
TA, AMBIENT TEMPERATURE (°C)
Figure 19. Typical Capacitance
Figure 20. Current Derating
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140
160
NTMSD3P102R2
PFO, AVERAGE POWER DISSIPATION (WATTS)
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
0.7
0.6
Ipk/Io = 0.5
dc
SQUARE
WAVE
Ipk/Io = 5.0
0.4
Ipk/Io = 10
Ipk/Io = 20
0.3
0.2
0.1
0
0
0.5
1.0
1.5
2.0
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 21. Forward Power Dissipation
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.1
NORMALIZED TO RJA AT STEADY STATE (1″ PAD)
0.05
0.02
0.0031 CHIP
JUNCTION 0.0014 F
0.01
0.01
0.0154 0.1521 0.4575 0.3719 0.0082 F
0.1052 F
SINGLE PULSE
2.7041 F 158.64 F
AMBIENT
0.001
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
t, TIME (s)
1.0E+00
Figure 22. Schottky Thermal Response
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1.0E+01
1.0E+02
1.0E+03
NTMSD3P102R2
INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to ensure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self–align when
subjected to a solder reflow process.
0.060
1.52
0.275
7.0
0.155
4.0
0.024
0.6
0.050
1.270
inches
mm
SOLDERING PRECAUTIONS
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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NTMSD3P102R2
TYPICAL SOLDER HEATING PROFILE
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density
board. The Vitronics SMD310 convection/infrared reflow
soldering system was used to generate this profile. The type
of solder used was 62/36/2 Tin Lead Silver with a melting
point between 177–189°C. When this type of furnace is
used for solder reflow work, the circuit boards and solder
joints tend to heat first. The components on the board are
then heated by conduction. The circuit board, because it has
a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may
be up to 30 degrees cooler than the adjacent solder joints.
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 23 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems, but it is a good starting point. Factors
that can affect the profile include the type of soldering
system in use, density and types of components on the
board, type of solder used, and the type of board or
substrate material being used. This profile shows
STEP 1
PREHEAT
ZONE 1
“RAMP”
200°C
STEP 2
STEP 3
VENT
HEATING
“SOAK” ZONES 2 & 5
“RAMP”
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
160°C
STEP 5
STEP 6
STEP 7
HEATING
VENT
COOLING
ZONES 4 & 7
205° TO 219°C
“SPIKE”
PEAK AT
170°C
SOLDER
JOINT
150°C
150°C
100°C
140°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
5°C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 23. Typical Solder Heating Profile
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10
NTMSD3P102R2
PACKAGE DIMENSIONS
SO–8
CASE 751–07
ISSUE W
–X–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
A
8
5
0.25 (0.010)
S
B
1
M
Y
M
4
K
–Y–
G
C
N
X 45 SEATING
PLANE
–Z–
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
S
J
DIM
A
B
C
D
G
H
J
K
M
N
S
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0
8
0.25
0.50
5.80
6.20
STYLE 18:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
http://onsemi.com
11
ANODE
ANODE
SOURCE
GATE
DRAIN
DRAIN
CATHODE
CATHODE
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0
8
0.010
0.020
0.228
0.244
NTMSD3P102R2
FETKY is a trademark of International Rectifier Corporation.
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NTMSD3P102R2/D