NZQA5V6XV5T1G Series Quad Array for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium. http://onsemi.com SOT−553 CASE 463B PLASTIC Specification Features • SOT−553 Package Allows Four Separate Unidirectional • • • • MARKING DIAGRAM Configurations Low Leakage < 1 mA @ 3 V for NZQA5V6XV5T1G Breakdown Voltage: 5.6 V − 6.8 V @ 1 mA ESD Protection Meeting IEC61000−4−2 − Level 4 These are Pb−Free Devices xx MG G Mechanical Characteristics • • • • • Void Free, Transfer−Molded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications 100% Lead Free, MSL1 @ 260°C Reflow Temperature xx = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1 5 2 3 4 ORDERING INFORMATION Device Package Shipping † NZQA5V6XV5T1G SOT−553 4000 / Tape & Reel (Pb−Free) NZQA5V6XV5T3G SOT−553 (Pb−Free) 16000 / Tape & Reel NZQA6V2XV5T1G SOT−553 4000 / Tape & Reel (Pb−Free) NZQA6V8XV5T1G SOT−553 4000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 April, 2007 − Rev. 3 1 Publication Order Number: NZQA5V6XV5T1/D NZQA5V6XV5T1G Series ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) Symbol IF Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VC VBR VRWM Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VBR IT IR VF IT V Breakdown Voltage @ IT Test Current QVBR Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IPP Uni−Directional MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Peak Power Dissipation (8 X 20 ms @ TA = 25°C) (Note 1) PPK 100 W Steady State Power − 1 Diode (Note 2) PD 300 mW Thermal Resistance Junction to Ambient Above 25°C, Derate RqJA 370 2.7 °C/W mW/°C Maximum Junction Temperature TJmax 150 °C Operating Junction and Storage Temperature Range TJ Tstg −55 to +150 °C VPP 16 16 9 kV TL 260 °C ESD Discharge MIL STD 883C − Method 3015−6 IEC1000−4−2, Air Discharge IEC1000−4−2, Contact Discharge Lead Solder Temperature (10 seconds duration) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = 25°C) Typ Capacitance @ 0 V Bias (Note 3) Max VF @ IF = 200 mA IPP (A) (pF) (V) 10.5 10 90 1.3 Breakdown Voltage VBR @ 1 mA (Volts) Leakage Current IRM @ VRM Min Nom Max VRWM IRWM (mA) VC (V) VC Max @ IPP Device Device Marking NZQA5V6XV5T1G 56 5.32 5.6 5.88 3.0 1.0 NZQA6V2XV5T1G 62 5.89 6.2 6.51 4.0 0.5 11.5 9.0 80 1.3 NZQA6V8XV5T1G 68 6.46 6.8 7.14 4.3 0.1 12.5 8.0 70 1.3 1. Non−repetitive current per Figure 1. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR−4 board with min pad. 3. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C http://onsemi.com 2 NZQA5V6XV5T1G Series 110 110 100 PERCENT OF IPP 90 80 70 % OF RATED POWER OR IPP WAVEFORM PARAMETERS tr = 8 ms td = 20 ms c−t 60 td = IPP/2 50 40 30 20 10 0 0 5 10 15 20 30 25 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Figure 1. Pulse Waveform Figure 2. Power Derating Curve 150 100 90 NZQA6V8XV5T1 12 NZQA6V2XV5T1 10 NZQA5V6XV5T1 8 6 4 C, CAPACITANCE (pF) VC, CLAMPING VOLTAGE (V) 90 t, TIME (ms) 14 2 0 100 1 3 5 7 9 10 11 80 70 60 50 40 30 20 10 0 12.5 13.5 5.3 5.6 5.9 6.2 6.5 6.8 IPP, PEAK PULSE CURRENT (A) VBR, BREAKDOWN VOLTAGE (V) Figure 3. Clamping Voltage versus Peak Pulse Current Figure 4. Typical Capacitance http://onsemi.com 3 7.1 NZQA5V6XV5T1G Series PACKAGE DIMENSIONS SOT−553, 5 LEAD CASE 463B−01 ISSUE B D −X− 5 A 4 1 2 L E −Y− 3 HE b 5 PL 0.08 (0.003) e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b c D E e L HE c M X Y SOLDERING FOOTPRINT* INCHES NOM MAX 0.022 0.024 0.009 0.011 0.005 0.007 0.063 0.067 0.047 0.051 0.020 BSC 0.004 0.008 0.012 0.059 0.063 0.067 MIN 0.020 0.007 0.003 0.059 0.043 STYLE 1: STYLE 2: PIN 1. BASE PIN 1. CATHODE 2. EMITTER 2. COMMON ANODE 3. BASE 3. CATHODE 2 4. COLLECTOR 4. CATHODE 3 5. COLLECTOR 5. CATHODE 4 0.3 0.0118 0.45 0.0177 1.35 0.0531 MILLIMETERS NOM MAX 0.55 0.60 0.22 0.27 0.13 0.18 1.60 1.70 1.20 1.30 0.50 BSC 0.10 0.20 0.30 1.50 1.60 1.70 MIN 0.50 0.17 0.08 1.50 1.10 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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