CHENMKO ENTERPRISE CO.,LTD 2SB717PT SURFACE MOUNT PNP Silicon Power Transistor VOLTAGE 12 Volts CURRENT 3 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Peak pulse current : 10A * Extremely low saturation voltage SC-62/SOT-89 * PC= 2.0 W * Extremely low equivalent On-resistance CONSTRUCTION 1.6MAX. 4.6MAX. * PNP Switching Transistor 0.4+0.05 2.5+0.1 0.8MIN. 4.6MAX. 1.7MAX. +0.08 0.45-0.05 +0.08 0.40-0.05 +0.08 0.40-0.05 1.50+0.1 1.50+0.1 1 1 Base 2 3 2 Collector ( Heat Sink ) CIRCUIT 3 Emitter 1 B 2 C 3 E Dimensions in millimeters SC-62/SOT-89 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL 2SB717PT UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO -12 Volts Collector - Emitter Voltage Open Base VCEO -12 Volts Emitter - Base Voltage Open Collector VEBO -5 Volts IC -3 Amps ICM -10 Amps IB -0.5 Amps PTOT 2000 mW TSTG -55 to +150 o C TJ -55 to +150 o C TAMB -55 to +150 o C Collector Current DC Peak Collector Current Note 1 Base Current Total Power Dissipation TA ≤ 25OC; Note 2 Storage Temperature Junction Temperature Operating Ambient Temperature Note 1. Measured under pulsed conditions. Pulse width=300uS. Duty cycle=2% 2. Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. 2007-04 RATING CHARACTERISTIC CURVES ( 2SB717PT ) 2SB717PT CHARACTERISTICS ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector-base breakdown voltage PARAMETERS IC=-100uA CONDITION BVCBO -12 -35 - Volts Collector-emitter breakdown voltage IC=-10mA; Note 3 BVCEO -12 -25 - Volts Emitter-base breakdown voltage IE=-100uA BVEBO -5 -8.5 - Volts Collector Cut-off Current IE=0; VCB=-10V ICBO - - -0.1 uA Emitter Cut-off Current IC=0; VEB=-4V IEBO - - -0.1 uA Collector Emitter Cut-off Current VCES=-10V ICES - - -0.1 uA DC Current Gain ; Note 3 IC=-10mA; VCE=-2V IC=-100mA; VCE=-2V IC=-3000mA; VCE=-2V IC=-8000mA; VCE=-2V IC=-10A; VCE=-2V hFE 300 300 160 60 45 475 450 240 100 70 - Collector-Emitter Saturation Voltage; Note 3 IC=-100mA; IB=-10mA IC=-1000mA; IB=-10mA IC=-3000mA; IB=-50mA VCEsat - -12 -110 -230 -20 -150 -320 mVolts Base-Emitter Saturation Voltage; Note 3 IC=-3000mA; IB=-50mA VBEsat - -0.92 -1.05 Volts Base-Emitter Turn-On Voltage; Note 3 IC=-3000mA; VCE=-2V VBEon - -0.85 -1.0 Volts Output Capacitance VCB=-10V; f=1MHz Cobo - 21 30 pF Transition Frequency IC=-50mA; VCE=-10V; f=100MHz fT 80 110 - MHz Turn-On Time IC=-2A; VCC=-6V; IB1=IB2=50mA t(on) - 70 - nS Turn-Off Time IC=-2A; VCC=-6V; IB1=IB2=50mA t(off) - 130 - nS Note 3. Measured under pulsed conditions. Pulse width=300uS. Duty cycle ≤ 2%