ETC 2SC1567R

Power Transistors
2SC1567, 2SC1567A
Silicon NPN epitaxial planar type
Unit: mm
8.0+0.5
–0.1
3.2±0.2
1.9±0.1
• High collector to emitter voltage VCEO
• Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
• TO-126B package which requires no insulation plate for installation to the heat sink
0.75±0.1
■ Absolute Maximum Ratings TC = 25°C
0.5±0.1
0.5±0.1
4.6±0.2
Parameter
Collector to base
voltage
2SC1567
Collector to
emitter voltage
2SC1567
Symbol
Rating
Unit
VCBO
100
V
VCEO
100
2SC1567A
2
1 : Emitter
2 : Collector
3 : Base
TO-126B Package
3
V
120
Emitter to base voltage
VEBO
Peak collector current
Collector current
Collector power dissipation
1
1.76±0.1
2.3±0.2
120
2SC1567A
3.05±0.1
■ Features
11.0±0.5
3.8±0.3
φ 3.16±0.1
16.0±1.0
For low-frequency high power driver
Complementary to 2SA0794 (2SA794) and 2SA0794A (2SA794A)
*
5
V
ICP
1
A
IC
0.5
A
PC
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) *: Without heat sink
■ Electrical Characteristics TC = 25°C
Parameter
Symbol
2SC1567
Collector to emitter
voltage
VCEO
Conditions
IC = 100 µA, IB = 0
2SC1567A
Min
Typ
Max
100
V
120
Emitter to base voltage
VEBO
IE = 1 µA, IC = 0
5
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 150 mA
65
130
hFE2
VCE = 5 V, IC = 500 mA
50
100
Collector to emitter saturation voltage
VCE(sat)
IC = 500 mA, IB = 50 mA
0.2
0.4
Base to emitter saturation voltage
VBE(sat)
IC = 500 mA, IB = 50 mA
0.85
1.2
VCB = 10 V, IE = −50 mA, f = 200 MHz
120
VCB = 10 V, IE = 0, f = 1 MHz
11
Transition frequency
fT
Collector output capacitance
Unit
Cob
V
330
V
V
MHz
20
pF
Note) *: Rank classification
Rank
R
S
hFE1
130 to 220
185 to 330
Note)The part numbers in the parenthesis show conventional part number.
1
2SC1567, 2SC1567A
Power Transistors
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
5
4
(1)
3
2
(2)
1
IB=20mA
0.8
6mA
4mA
0.6
0.4
2mA
4
6
8
10
12
0
Collector to emitter voltage VCE (V)
0.3
TC=100˚C
25˚C
–25˚C
0.03
0.01
0.003
0.001
IC/IB=10
100
300
3
1
TC=–25˚C
100˚C
0.3
25˚C
0.1
0.03
10
3
f T  IE
30
100
300
1000
–25˚C
30
10
3
3
120
100
80
60
40
20
IE=0
f=1MHz
TC=25˚C
Emitter current IE (mA)
–100
100
300
1000
VCE=20V
104
40
30
20
10
103
102
10
0
–30
30
ICEO  Ta
105
ICEO (Ta)
ICEO (Ta=25˚C)
140
Collector output capacitance Cob (pF)
160
10
Collector current IC (mA)
Cob  VCB
VCB=10V
f=200MHz
TC=25˚C
–10
100
1
50
–3
TC=100˚C
25˚C
Collector current IC (mA)
200
0
–1
300
1
1
Collector current IC (mA)
180
VCE=10V
1000
10
1000
15
3000
30
0.01
30
10
10000
Forward current transfer ratio hFE
1
10
5
Base current IB (mA)
hFE  IC
100
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10
3
0.4
VBE(sat)  IC
3
1
0.6
0
2
VCE(sat)  IC
10
0.1
0.8
0.2
0
20 40 60 80 100 120 140 160 180
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
1.0
0
0
Transition frequency fT (MHz)
8mA
VCE=10V
TC=25˚C
0.2
0
2
IC  I B
1.2
18mA
TC=25˚C
16mA
14mA
12mA
10mA
1.0
Collector current IC (A)
Collector power dissipation PC (W)
IC  VCE
1.2
Collector current IC (A)
PC  T a
6
1
1
3
10
30
100
Collector to base voltage VCB (V)
0 20 40 60 80 100 120 140 160 180 200
Ambient temperature Ta (˚C)
Power Transistors
2SC1567, 2SC1567A
ICBO  Ta
104
Area of safe operation (ASO)
10
VCB=20V
Single pulse
TC=25˚C
10
IC
0.3
t=10ms
t=1s
0.1
0.03
0.01
0.003
1
2SC1567A
ICBO (Ta)
ICBO (Ta=25˚C)
102
ICP
1
2SC1567
Collector current IC (A)
3
103
0.001
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
3
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2001 MAR