Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • High collector to emitter voltage VCEO • Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier • TO-126B package which requires no insulation plate for installation to the heat sink 0.75±0.1 ■ Absolute Maximum Ratings TC = 25°C 0.5±0.1 0.5±0.1 4.6±0.2 Parameter Collector to base voltage 2SC1567 Collector to emitter voltage 2SC1567 Symbol Rating Unit VCBO 100 V VCEO 100 2SC1567A 2 1 : Emitter 2 : Collector 3 : Base TO-126B Package 3 V 120 Emitter to base voltage VEBO Peak collector current Collector current Collector power dissipation 1 1.76±0.1 2.3±0.2 120 2SC1567A 3.05±0.1 ■ Features 11.0±0.5 3.8±0.3 φ 3.16±0.1 16.0±1.0 For low-frequency high power driver Complementary to 2SA0794 (2SA794) and 2SA0794A (2SA794A) * 5 V ICP 1 A IC 0.5 A PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) *: Without heat sink ■ Electrical Characteristics TC = 25°C Parameter Symbol 2SC1567 Collector to emitter voltage VCEO Conditions IC = 100 µA, IB = 0 2SC1567A Min Typ Max 100 V 120 Emitter to base voltage VEBO IE = 1 µA, IC = 0 5 Forward current transfer ratio hFE1 * VCE = 10 V, IC = 150 mA 65 130 hFE2 VCE = 5 V, IC = 500 mA 50 100 Collector to emitter saturation voltage VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 Base to emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.2 VCB = 10 V, IE = −50 mA, f = 200 MHz 120 VCB = 10 V, IE = 0, f = 1 MHz 11 Transition frequency fT Collector output capacitance Unit Cob V 330 V V MHz 20 pF Note) *: Rank classification Rank R S hFE1 130 to 220 185 to 330 Note)The part numbers in the parenthesis show conventional part number. 1 2SC1567, 2SC1567A Power Transistors (1)With a 100×100×2mm Al heat sink (2)Without heat sink 5 4 (1) 3 2 (2) 1 IB=20mA 0.8 6mA 4mA 0.6 0.4 2mA 4 6 8 10 12 0 Collector to emitter voltage VCE (V) 0.3 TC=100˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 IC/IB=10 100 300 3 1 TC=–25˚C 100˚C 0.3 25˚C 0.1 0.03 10 3 f T IE 30 100 300 1000 –25˚C 30 10 3 3 120 100 80 60 40 20 IE=0 f=1MHz TC=25˚C Emitter current IE (mA) –100 100 300 1000 VCE=20V 104 40 30 20 10 103 102 10 0 –30 30 ICEO Ta 105 ICEO (Ta) ICEO (Ta=25˚C) 140 Collector output capacitance Cob (pF) 160 10 Collector current IC (mA) Cob VCB VCB=10V f=200MHz TC=25˚C –10 100 1 50 –3 TC=100˚C 25˚C Collector current IC (mA) 200 0 –1 300 1 1 Collector current IC (mA) 180 VCE=10V 1000 10 1000 15 3000 30 0.01 30 10 10000 Forward current transfer ratio hFE 1 10 5 Base current IB (mA) hFE IC 100 Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 3 0.4 VBE(sat) IC 3 1 0.6 0 2 VCE(sat) IC 10 0.1 0.8 0.2 0 20 40 60 80 100 120 140 160 180 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 1.0 0 0 Transition frequency fT (MHz) 8mA VCE=10V TC=25˚C 0.2 0 2 IC I B 1.2 18mA TC=25˚C 16mA 14mA 12mA 10mA 1.0 Collector current IC (A) Collector power dissipation PC (W) IC VCE 1.2 Collector current IC (A) PC T a 6 1 1 3 10 30 100 Collector to base voltage VCB (V) 0 20 40 60 80 100 120 140 160 180 200 Ambient temperature Ta (˚C) Power Transistors 2SC1567, 2SC1567A ICBO Ta 104 Area of safe operation (ASO) 10 VCB=20V Single pulse TC=25˚C 10 IC 0.3 t=10ms t=1s 0.1 0.03 0.01 0.003 1 2SC1567A ICBO (Ta) ICBO (Ta=25˚C) 102 ICP 1 2SC1567 Collector current IC (A) 3 103 0.001 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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