2SC2411K / 2SC4097 / 2SC1741S Transistors Medium Power Transistor (32V, 0.5A) 2SC2411K / 2SC4097 / 2SC1741S !External dimensions (Units : mm) 2SC2411K 2SC4097 1.1+0.2 −0.1 1.9±0.2 2.0±0.2 0.8±0.1 2.8±0.2 (3) (3) !Structure Epitaxial planar type NPN silicon transistor 0.3 ∼ 0.6 All terminals have same dimensions +0.1 0.15 −0.06 0.4 +0.1 −0.05 (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : C* (15Min.) 3Min. 3±0.2 2±0.2 0.45+−0.15 0.05 2.5 +−0.4 0.1 5 0.5 0.15 0.45 + −0.05 (1) (2) (3) (1) Emitter (2) Collector (3) Base ROHM : SPT EIAJ : SC-72 * Denotes hFE !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Collector current IC 0.5 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 ∼ +150 °C * PC must not be exceeded. * 0 ∼ 0.1 All terminals have same dimensions 0.3 +0.1 −0 ROHM : UMT3 EIAJ : SC-70 0.15±0.05 (1) Emitter (2) Base (3) Collector Abbreviated symbol : C* 2SC1741S 4±0.2 0.7±0.1 (2) 0 ∼ 0.1 2.1±0.1 (1) 0.2 1.25±0.1 (2) (1) 0.9±0.1 1.3±0.1 0.65 0.65 0.1 ∼ 0.4 2.9±0.2 0.95 0.95 1.6+0.2 −0.1 !Features 1) High ICMax. ICMax. = 0.5mA 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. 2SC2411K / 2SC4097 / 2SC1741S Transistors !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 40 − − V IC = 100µA Collector-emitter breakdown voltage BVCEO 32 − − V IC = 1mA Emitter-base breakdown voltage BVEBO 5 − − V IE = 100µA Collector cutoff current ICBO − − 1 µA VCB = 20V Emitter cutoff current IEBO − − 1 µA VEB = 4V 82 − 390 − 120 − 560 − DC current 2SC2411K, 2SC4097 transfer ratio 2SC1741S hFE Collector-emitter saturation voltage VCE(sat) − − 0.4 V fT − 250 − MHz Cob − 6.0 − pF Transition frequency Output capacitance Conditions VCE = 3V, IC = 100mA IC/IB = 500mA/50mA VCE = 5V, IE = −20mA, f = 100MHz VCB = 10V, IE = 0A, f = 1MHz !Packaging Specifications and hFE Package Taping Code T146 T106 TP Basic ordering unit (pieces) 3000 3000 5000 − − Type hFE 2SC2411K PQR 2SC4097 PQR − 2SC1741S QRS − − − hFE values are classified as follows: Item P Q R S hFE 82 ∼ 180 120 ∼ 270 180 ∼ 390 270 ∼ 560 !Electrical characteristic curves 100 VCE=6V 200 100 Ta=100°C 50 −25°C 80°C 25°C 20 10 −55°C 5 2 1 0.5 Ta=25°C 0.35mA 0.30mA 0.25mA 50 0.20mA 0.15mA 0.10mA 0.05mA 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 BASE TO EMITTER VOLTAGE : VBE(V) Fig.1 Grounded emitter propagation characteristics 500 A 0.45m A 0.40m mA 0.50 COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) 500 COLLECTOR CURRENT : IC(mA) 1000 0 0 1 2 3 IB=0A 4 Grounded emitter output characteristics(Ι) 2mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 400 300 0.8mA 200 0.6mA 0.4mA 100 0.2mA 5 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.2 Ta=25°C 0 0 IB=0A 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.3 Grounded emitter output characteristics(ΙΙ) 2SC2411K / 2SC4097 / 2SC1741S 1000 Ta=25°C lC/lB=10 500 0.5 0.2 0.1 0.05 200 Ta=100°C 75°C 100 50 50°C 25°C 0°C °C −25 °C −50 20 0.02 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC(mA) COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib (pF) Cib 20 Co 10 b 5 2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB(V) EMITTER TO BASE VOLTAGE : VEB(V) Fig.7 0.5 1 2 5 10 20 50 100 200 5001000 Fig.5 DC current gain vs. collector current Ta=25°C f=1MHz IE=0A IC=0A 50 10 0.1 0.2 COLLECTOR CURRENT : IC(mA) Fig.4 Collector-emitter saturation voltage vs. collector current Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 500 VCE=3V TRANSITION FREQUENCY : fT(MHz) 1 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) Transistors Ta=25°C VCE=5V 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 EMITTER CURRENT : IE(mA) Fig. 6 Gain bandwidth product vs. emitter current