Power Transistors 2SC2590 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1110 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 11.0±0.5 3.05±0.1 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • High transition frequency fT • A complementary pair with 2SA1110, is optimum for the driverstage of a 40 W to 60 W output amplifier • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 ■ Features 16.0±1.0 3.8±0.3 φ 3.16±0.1 0.5±0.1 0.5±0.1 4.6±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector to base voltage Collector power dissipation * PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1 2 1.76±0.1 2.3±0.2 1 : Emitter 2 : Collector 3 : Base TO-126B Package 3 Note) *: Without heat sink ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min VCEO IC = 100 µA, IB = 0 Emitter to base voltage VEBO IE = 10 µA, IC = 0 5 Forward current transfer ratio hFE1 * VCE = 10 V, IC = 150 mA 90 hFE2 VCE = 5 V, IC = 500 mA 65 Collector to emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA Base to emitter saturation voltage VBE(sat) IC = 300 mA, IB = 30 mA Collector to emitter voltage Transition frequency fT Collector output capacitance Cob Typ Max 120 Unit V V 220 100 1 1.2 VCB = 10 V, IE = −50 mA, f = 200 MHz 200 VCB = 10 V, IE = 0, f = 1 MHz 11 V V MHz 20 pF Note) *: Rank classification Rank Q R hFE1 90 to 155 130 to 220 1 2SC2590 Power Transistors PC T a IC VCE TC=25˚C 4 3 (1) 2 IB=1.0mA 0.9mA 0.8mA 120 0.7mA 0.6mA 80 0.5mA 0.4mA 0.3mA 0.2mA (2) 0.1mA 0 0 0 40 80 120 160 200 0 2 8 10 12 VBE(sat) IC hFE IC IC/IB=10 25˚C 0.1 0.03 0.03 0.1 0.3 TC=100˚C 300 25˚C –25˚C 100 30 10 0.01 1 0.03 0.1 0.3 1 Collector current IC (A) Cob VCB IE=0 f=1MHz TC=25˚C 40 20 Single pulse TC=25˚C 3 Collector current IC (A) 60 ICP 1 t=10ms IC 0.3 t=1s 0.1 0.03 0.01 0.003 0 0.001 3 10 30 25˚C 0.1 –25˚C TC=100˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 100 Collector to base voltage VCB (V) 1 3 10 30 100 300 VCB=10V f=200MHz TC=25˚C 300 200 100 0 –1 –3 –10 –30 Emitter current IE (mA) Area of safe operation (ASO) 10 80 1 0.3 VCE=10V 1000 100˚C 0.3 1 fT I E 3000 TC=–25˚C 1 IC/IB=10 Collector current IC (A) Transition frequency fT (MHz) 3 3 400 Collector current IC (A) Collector output capacitance Cob (pF) 6 Collector to emitter voltage VCE (V) 0.01 0.01 2 4 Ambient temperature Ta (˚C) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 160 40 1 Collector to emitter saturation voltage VCE(sat) (V) (1)With a 100×100×2mm Al heat sink (2)Without heat sink 5 VCE(sat) IC 280 Collector current IC (A) Collector power dissipation PC (W) 6 1000 Collector to emitter voltage VCE (V) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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