ETC 2SC2590Q

Power Transistors
2SC2590
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency power amplification
Complementary to 2SA1110
8.0+0.5
–0.1
3.2±0.2
0.75±0.1
11.0±0.5
3.05±0.1
• Excellent current IC characteristics of forward current transfer ratio
hFE vs. collector
• High transition frequency fT
• A complementary pair with 2SA1110, is optimum for the driverstage of a 40 W to 60 W output amplifier
• TO-126B package which requires no insulation plate for installation to the heat sink
1.9±0.1
■ Features
16.0±1.0
3.8±0.3
φ 3.16±0.1
0.5±0.1
0.5±0.1
4.6±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
Rating
Unit
VCBO
120
V
Collector to emitter voltage
VCEO
120
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1
A
Collector current
IC
0.5
A
Collector to base voltage
Collector power dissipation
*
PC
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1
2
1.76±0.1
2.3±0.2
1 : Emitter
2 : Collector
3 : Base
TO-126B Package
3
Note) *: Without heat sink
■ Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Min
VCEO
IC = 100 µA, IB = 0
Emitter to base voltage
VEBO
IE = 10 µA, IC = 0
5
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 150 mA
90
hFE2
VCE = 5 V, IC = 500 mA
65
Collector to emitter saturation voltage
VCE(sat)
IC = 300 mA, IB = 30 mA
Base to emitter saturation voltage
VBE(sat)
IC = 300 mA, IB = 30 mA
Collector to emitter voltage
Transition frequency
fT
Collector output capacitance
Cob
Typ
Max
120
Unit
V
V
220
100
1
1.2
VCB = 10 V, IE = −50 mA, f = 200 MHz
200
VCB = 10 V, IE = 0, f = 1 MHz
11
V
V
MHz
20
pF
Note) *: Rank classification
Rank
Q
R
hFE1
90 to 155
130 to 220
1
2SC2590
Power Transistors
PC  T a
IC  VCE
TC=25˚C
4
3
(1)
2
IB=1.0mA
0.9mA
0.8mA
120
0.7mA
0.6mA
80
0.5mA
0.4mA
0.3mA
0.2mA
(2)
0.1mA
0
0
0
40
80
120
160
200
0
2
8
10
12
VBE(sat)  IC
hFE  IC
IC/IB=10
25˚C
0.1
0.03
0.03
0.1
0.3
TC=100˚C
300
25˚C
–25˚C
100
30
10
0.01
1
0.03
0.1
0.3
1
Collector current IC (A)
Cob  VCB
IE=0
f=1MHz
TC=25˚C
40
20
Single pulse
TC=25˚C
3
Collector current IC (A)
60
ICP
1
t=10ms
IC
0.3
t=1s
0.1
0.03
0.01
0.003
0
0.001
3
10
30
25˚C
0.1
–25˚C
TC=100˚C
0.03
0.01
0.01
0.03
0.1
0.3
1
100
Collector to base voltage VCB (V)
1
3
10
30
100
300
VCB=10V
f=200MHz
TC=25˚C
300
200
100
0
–1
–3
–10
–30
Emitter current IE (mA)
Area of safe operation (ASO)
10
80
1
0.3
VCE=10V
1000
100˚C
0.3
1
fT  I E
3000
TC=–25˚C
1
IC/IB=10
Collector current IC (A)
Transition frequency fT (MHz)
3
3
400
Collector current IC (A)
Collector output capacitance Cob (pF)
6
Collector to emitter voltage VCE (V)
0.01
0.01
2
4
Ambient temperature Ta (˚C)
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
160
40
1
Collector to emitter saturation voltage VCE(sat) (V)
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
5
VCE(sat)  IC
280
Collector current IC (A)
Collector power dissipation PC (W)
6
1000
Collector to emitter voltage VCE (V)
–100
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2001 MAR