Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 3.0±0.2 4.0±0.2 ■ Features (Ta=25˚C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 55 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 2 3 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Symbol Parameter Collector cutoff current 1 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 ● Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. 0.7±0.1 ● +0.2 0.45–0.1 ● Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 0.1 µA 1 µA ICEO VCE = 20V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 55 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V * Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE VCE = 1V, IC = 30mA Transition frequency fT VCB = 5V, IE = –2mA, f = 200MHz Noise voltage NV *h FE VCE = 5V, IC = 2mA 180 700 IC = 100mA, IB = 10mA VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 1 1 200 V V MHz 150 mV Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 1 2SC3312 Transistor PC — Ta IC — VCE 120 Ta=25˚C 200 100 160 IB=400µA 350µA 330µA 250µA 120 200µA 80 150µA 100µA 40 –25˚C 80 60 40 20 50µA 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 Forward current transfer ratio hFE 3 1 0.3 Ta=75˚C 25˚C –25˚C 0.3 1 3 10 30 25˚C –25˚C 200 0.3 3 10 30 100 4 3 2 1 ICE=10V GV=80dB Function=FLAT Ta=25˚C 200 160 120 Rg=100kΩ 80 22kΩ 40 0 100 Collector to base voltage VCB (V) 2.0 350 300 250 200 150 100 0 0.01 4.1kΩ 0.03 0.1 0.3 Collector current IC (mA) 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) NV — IC Noise voltage NV (mV) Collector output capacitance Cob (pF) 1 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 1.6 50 240 30 1.2 VCB=5V Ta=25˚C Ta=75˚C 400 Cob — VCB 10 0.8 400 600 0 0.1 100 5 3 0.4 Base to emitter voltage VBE (V) fT — I E 800 Collector current IC (mA) 1 0 VCE=5V 10 0.01 0.1 12 1000 30 0.03 10 hFE — IC IC/IB=10 0.1 8 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 6 Transition frequency fT (MHz) 0 Collector to emitter saturation voltage VCE(sat) (V) Ta=75˚C 100 Collector current IC (mA) 300 VCE=5V 25˚C 200 400 0 2 IC — VBE 240 Collector current IC (mA) Collector power dissipation PC (mW) 500 1 –100