HAMAMATSU P10090

INFRARED DETECTOR
InAs photovoltaic detector
P10090 series
Low noise, high reliability infrared detectors (for 3 µm band)
InAs photovoltaic detectors have high sensitivity in the infrared region around 3 µm as with PbS photoconductive detectors, and also
feature low noise and high reliability. P10090 series is a new family of InAs photovoltaic detectors that deliver even higher sensitivity than
our convensional products (P8079 series).
Features
Applications
l Low noise
l High reliability
l High detectivity (D*)
l Available in multi-element arrays (custom product)
l Gas analysis
l Laser detection
l Infrared spectrophotometry
l Radiation thermometer
Accessories (Optional)
l Heatsink for one-stage TE-cooled type
l Heatsink for two-stage TE-cooled type
l Temperature controller
l Infrared detector module with preamp
l Amplifiers for InAs photovoltaic detector
A3179
A3179-01
C1103-04
P4631-01
(custom-made product)
■ Specifications/Absolute maximum ratings
Type No.
P10090-01
Dimensional
outline/
Windo w
material *
Package
Cooling
➀/S
TO-5
➁/S
TO-8
Non-cooled
One-stage
TE-cooled
Two-stage
TE-cooled
Active
area
(mm)
P10090-11
P10090-21
φ1
Thermistor
power
dissipation
(mW)
0.2
Absolute maximum ratings
Operating
Reverse
temperature
voltage
Topr
VR
(V)
(°C)
0.5
-40 to +60
Storage
temperature
Tstg
(°C)
-40 to +80
* Window material S: sapphire glass
■ Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
P10090-01
P10090-11
P10090-21
Measure ment
Peak
Photo
condition
C ut-off
sensitivity
sensitivity Shunt resistance
w a velength
Ele m e nt
wavelength
S
Rsh
te m p erature
λc
λp
λ=λp
T
Min.
Typ.
(°C)
(µm)
(µm)
(A/W)
(Ω)
(Ω)
25
3.35
3.65
1.0
40
70
-10
3.30
3.55
250
400
1.2
-30
3.25
3.45
1000
1300
D∗
(λp, 600, 1)
NEP
λ=λp
Rise time
tr
VR=0 V
RL=50 Ω
0 to 63 %
Min.
Typ.
(cm· Hz 1/2 /W) (cm· Hz 1/2 /W)
3.0 × 109 4.5 × 109
1.0 × 1010 1.6 × 1010
2.0 × 1010 3.2 × 1010
(W/Hz1/2)
1.5 × 10-11
5.3 × 10-12
2.8 × 10-12
(µs)
0.70
0.45
0.30
1
P10090 series
InAs photovoltaic detector
■ Spectral response (D*)
10
■ Spectral response
(Typ.)
11
(Typ.)
1.4
P10090-21 (T= -30 ˚C)
D* (cm · Hz1/2/W)
10
PHOTO SENSITIVITY (A/W)
1.2
10
P10090-11
(T= -10 ˚C)
109
P10090-01
(T=25 ˚C)
10
8
1.0
0.8
T= -10 ˚C
0.6
T= -30 ˚C
0.4
0.2
107
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1.0
4.5
T=25 ˚C
1.5
WAVELENGTH (µm)
2.0
2.5
3.0
3.5
4.0
WAVELENGTH (µm)
KIRDB0356EB
■ Dark current vs. reverse voltage
KIRDB0381EA
■ Shunt resistance vs. element temperature
(Typ.)
1 mA
(Typ.)
100 kΩ
T=25 ˚C
SHUNT RESISTANCE
DARK CURRENT
10 kΩ
100 µA
T= -10 ˚C
T= -30 ˚C
10 µA
1 kΩ
100 Ω
10 Ω
1 µA
0.01
0.1
1Ω
-100
1
-80
-60
-40
-20
0
20
40
60
ELEMENT TEMPERATURE (˚C)
REVERSE VOLTAGE (V)
KIRDB0382EA
■ Linearity
KIRDB0383EA
■ Sensitivity uniformity
(Typ. Ta=25 ˚C, λ=1.3 µm)
1000
(Typ. λ=1.55 µm)
110
T= -10 ˚C
RELATIVE SENSITIVITY (%)
OPTICAL OUTPUT POWER (µA)
100
100
10
90
T=10 ˚C
80
T=25 ˚C
70
60
50
40
30
1
1
10
100
1000
10000
-400
-200
0
200
400
600
POSITION ON ACTIVE AREA (µm)
INCIDENT LIGHT LEVEL (µW)
KIRDB0384EA
2
20
-600
KIRDB0385EA
InAs photovoltaic detector
■ Current vs. voltage of TE-cooled type
1.6
■ Cooling characteristics of TE-cooled type
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
CURRENT (A)
ONE-STAGE
TE-COOLED
1.0
0.8
TWO-STAGE
TE-COOLED
0.6
0.4
(Typ. Ta=25 ˚C, thermal resistance of heat-sink=3 ˚C/W)
30
ELEMENT TEMPERATURE (˚C)
1.4
1.2
20
10
ONE-STAGE
TE-COOLED TYPE
0
-10
-20
-30
TWO-STAGE
TE-COOLED TYPE
-40
0.2
-50
0
0
0.2
0.4
0.6
0.8
P10090 series
1.0
1.2
0
0.4
0.8
1.2
1.6
TE-COOLED CURRENT (A)
VOLTAGE (V)
KIRDB0115EB
KIRDB0181EA
■ Thermistor temperature characteristic
(Typ.)
RESISTANCE (Ω)
106
105
104
103
-40
-20
0
20
ELEMENT TEMPERATURE (˚C)
KIRDB0116EA
■ Measurement circuit
CHOPPER
600 Hz
DETECTOR
BAND-PASS
FILTER
BLACK BODY
r.m.s.
METER
fo=600 Hz
∆f=60 Hz
INCIDENT ENERGY: 245 µW/cm2
KIRDC0075EA
3
InAs photovoltaic detector
P10090 series
■ Dimensional outlines (unit: mm)
➀ P10090-01
➁ P10090-11/-21
9.1 ± 0.3
15.3 ± 0.2
8.1 ± 0.1
WINDOW
5.5 ± 0.1
10 ± 0.2
4.3 ± 0.2
2.3 ± 0.2
PHOTOSENSITIVE
SURFACE
12 MIN.
0.45
LEAD
18 MIN.
0.4 MAX.
a
PHOTOSENSITIVE
SURFACE
14 ± 0.2
WINDOW
10 ± 0.2
0.45
LEAD
5.1 ± 0.2
10.2 ± 0.2
1.0 MAX.
5.1 ± 0.2
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
CASE
P10090-11 P10090-21
5.1 ± 0.2
a
4.5 ± 0.2
KIRDA0119EA
6.9 ± 0.2
KIRDA0191EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1099E03
Mar. 2007 DN
4