isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3799 · DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 800V(Min.) ·Low Collector Saturation Voltage ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. n c . i m e ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 800 V 800 V 500 V 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 4 A Collector Power Dissipation @Ta=25℃ 3 B PC Tj Tstg W Collector Power Dissipation @TC=25℃ 100 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3799 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain fT CONDITIONS Switching Times w w ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn TYP. n c . i m e IC= 0.5A; VCE= 10V; f= 1MHz IC= 5A; IB1= -IB2= 1A; VCC= 200V UNIT V B IC= 5A; VCE= 5V MAX 500 B s c s i . w Current-Gain—Bandwidth Product MIN 15 8 8 MHz 1.0 μs 3.0 μs 1.0 μs