isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1663 DESCRIPTION ·High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1663 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 50mH VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.5 V IEBO Emitter Cutoff Current VEB= 7.7V; IC= 0 100 μA ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 50 1.0 μA mA hFE DC Current Gain IC= 1A; VCE= 5V 700 18 UNIT V 50 Switching times ton Turn-On Time tstg Storage Time tf IC= 2.5A, IB1= 0.5A, IB2= -1A Fall Time hFE Classifications Q P 18-34 18-50 isc Website：www.iscsemi.cn 2 1.0 μs 3.0 μs 0.5 μs