Power Transistors 2SC3869 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm ● ● 0.7±0.1 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 10 A Collector current IC 5 A Base current IB 1.5 A Collector to emitter voltage Collector power TC=25°C dissipation Ta=25°C 35 PC Junction temperature Tj Storage temperature Tstg 4.2±0.2 7.5±0.2 16.7±0.3 φ3.1±0.1 1.4±0.1 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 ■ Electrical Characteristics 2.7±0.2 4.0 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ Unit 100 µA 100 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 400 hFE1 VCE = 5V, IC = 0.1A 15 hFE2 VCE = 5V, IC = 2A 8 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.4A 1.0 V Base to emitter saturation voltage VBE(sat) IC = 2A, IB = 0.4A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio VCB = 500V, IE = 0 max Collector cutoff current IC = 2A, IB1 = 0.4A, IB2 = – 0.8A, VCC = 150V V 15 MHz 0.7 µs 2.0 µs 0.3 µs 1 Power Transistors 2SC3869 PC — Ta IC — VCE IC — VCE(sat) 6 40 (1) IB=700mA 5 30 20 (2) 10 IC/IB=5 TC=25˚C 7 600mA 500mA 400mA 4 300mA 200mA 3 150mA 100mA 2 50mA 1 Collector current IC (A) 50 8 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2.0W) Collector current IC (A) Collector power dissipation PC (W) 60 20mA (3) 6 5 4 3 2 1 (4) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 IC — VCE(sat) 12 6 5 4 3 2 1 1.0 1.5 2.0 100 30 TC=–25˚C 10 25˚C 125˚C 3 0.1 0.3 1 3 10 Area of safe operation (ASO) Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=150V TC=25˚C Collector current IC (A) 10 3 tstg 1 ton 0.3 0.1 Non repetitive pulse TC=25˚C 30 tf 10 t=1ms 10ms 3 DC 1 0.3 0.1 0.03 0.03 0.01 0.01 0 1 2 3 Collector current IC (A) 4 1 3 10 30 100 300 300 100 30 10 3 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 100 30 2.0 VCE=10V TC=25˚C Collector current IC (A) ton, tstg, tf — IC 1.5 Cob — VCB 300 Collector to emitter saturation voltage VCE(sat) (V) 100 1.0 VCE=5V TC=25˚C 1 0.01 0.03 0 0.5 0.5 1000 Transition frequency fT (MHz) IC/IB=5 TC=25˚C 0 0 Collector to emitter saturation voltage VCE(sat) (V) hFE — IC Forward current transfer ratio hFE Collector current IC (A) 10 1000 7 Switching time ton,tstg,tf (µs) 8 Collector to emitter voltage VCE (V) 8 2 6 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SC3869 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3