2SC4083 NPN Silicon Transistor 3 P b Lead(Pb)-Free 1 FEATURES: 1. BASE 2. EMITTER 3. COLLECTOR * Radio frequency amplifier * High transition frequency * High gain with low collector-to base time constant * Low noise (NF) * Marking: 1D 2 SOT-323(SC-70) Maximum Ratings ( TA=25°C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 11 V Emitter-Base Voltage VEBO 3 V Collector Current -Continuous IC 50 mA Collector Power Dissipation PD 0.2 W Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to +150 °C Rating SOT-323 Outline Demensions Unit:mm A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 1/4 Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 02-Jun-10 2SC4083 WEITRON ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified) Parameter Symbol Min Typ Max Unit V (BR)CBO 20 - - V V (BR)CEO 11 - - V V (BR)EBO 3 - - V I CBO - - 0.5 µA I EBO - - 0.5 µA hFE 56 - 270 - V CE(sat) - - 0.5 V fT - 1.2 - GHz Cob - - 1.5 pF C C · rbb - - 12 pS NF - 3.5 - dB Collector-base breakdown voltage I C =10μA, I E =0 Collector-emitter breakdown voltage I C = 1mA, I B =0 Emitter-base breakdown voltage I E = 10 μA, IC =0 Collector cut-off current VCB =10V, I E =0 Emitter cut-off current VEB =2V, IC =0 DC current gain VCE =10V, IC = 5mA Collector-base saturation voltage IC =10mA, I B =5mA Transition frequency VCE =10V,I C =10mA, f =500MHz Output capacitance VCB =10V,I E =0, f =1MHz Collector-base time constant V CB =10V,I C =10mA, f=31.8MHz Noise figure V CE =6V,I C =2mA,f =500MHz,Rg=50Ω CLASSIFICATION OF hFE Rank Range WEITRON http://www.weitron.com.tw N P Q 56-120 82-180 120-270 2/4 02-Jun-10 2SC4083 WEITRON Typical Characteristics WEITRON http://www.weitron.com.tw 3/4 02-Jun-10 2SC4083 WEITRON http://www.weitron.com.tw WEITRON 4/4 02-Jun-10