NIKO-SEM N-Channel Logic Level Enhancement P2804BDG Mode Field Effect Transistor TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 28mΩ 10A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V TC = 25 °C Continuous Drain Current 10 ID TC = 100 °C Pulsed Drain Current1 8 IDM TC = 25 °C Power Dissipation 32 PD TC = 100 °C Operating Junction & Storage Temperature Range 1 Lead Temperature ( /16” from case for 10 sec.) A 40 W 22 Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RθJc 3 °C / W Junction-to-Ambient RθJA 75 °C / W 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1％ 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 VGS(th) VDS = VGS, ID = 250µA 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 32V, VGS = 0V 1 VDS = 30V, VGS = 0V, TC = 125 °C 10 On-State Drain Current1 ID(ON) Gate Threshold Voltage VDS = 10V, VGS = 10V 1 40 V 1.5 2.5 nA µA A AUG-19-2004 NIKO-SEM N-Channel Logic Level Enhancement P2804BDG Mode Field Effect Transistor TO-252 (DPAK) Lead-Free Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.5V, ID = 8A 30 42 VGS = 10V, ID = 10A 21 28 VDS = 10V, ID = 10A 19 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 65 Qg 16 Total Gate Charge 2 Gate-Source Charge 2 Gate-Drain Charge2 Turn-On Delay Time 2 Rise Time2 Turn-Off Delay Time2 Fall Time2 790 VGS = 0V, VDS = 10V, f = 1MHz Qgs VDS = 0.5V(BR)DSS, VGS = 10V, 2.5 Qgd ID = 10A 2.1 td(on) pF 175 nC 2.2 4.4 tr VDS = 20V, RL = 1Ω 7.5 15 td(off) ID ≅ 1A, VGS = 10V, RGEN = 6Ω 11.8 21.3 3.7 7.4 tf nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 1.3 Pulsed Current3 ISM 2.6 Forward Voltage1 VSD IS = IS, VGS = 0V Reverse Recovery Time trr IF = 5 A, dlF/dt = 100A / µS Reverse Recovery Charge Qrr 1 A V 15.5 nS 7.9 nC Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THE PRODUCT MARKED WITH “P2804BDG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 AUG-19-2004 NIKO-SEM N-Channel Logic Level Enhancement P2804BDG Mode Field Effect Transistor TO-252 (DPAK) Lead-Free TYPICAL PERFORMANCE CHARACTERISTICS Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125° C Is - Reverse Drain Current(A) 10 25° C 1 -55° C 0.1 0.01 0.001 0 3 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 AUG-19-2004 NIKO-SEM N-Channel Logic Level Enhancement P2804BDG Mode Field Effect Transistor TO-252 (DPAK) Lead-Free 4 AUG-19-2004 NIKO-SEM N-Channel Logic Level Enhancement P2804BDG Mode Field Effect Transistor TO-252 (DPAK) Lead-Free TO-252 (DPAK) MECHANICAL DATA mm mm Dimension Dimension Min. Typ. Max. Min. Typ. Max. A 9.35 10.4 H 0.89 2.03 B 2.2 2.4 I 6.35 6.80 C 0.45 0.6 J 5.2 5.5 D 0.89 1.5 K 0.6 1 E 0.45 0.69 L 0.5 0.9 F 0.03 0.23 M 3.96 G 5.2 6.2 N 4.57 5.18 G M 2 1 J I 3 L H D C E F B A K 5 AUG-19-2004