NIKO-SEM P0903BI N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-251 Lead-Free D 3 PRODUCT SUMMARY RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE 1 2 V(BR)DSS G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage TC = 25 °C Continuous Drain Current SYMBOL LIMITS UNITS VGS ±20 V 50 ID TC = 100 °C 35 Pulsed Drain Current 1 IDM 200 Avalanche Current IAR 40 L = 0.1mH EAS 250 L = 0.05mH EAR 8.6 Avalanche Energy Repetitive Avalanche Energy 2 TC = 25 °C Power Dissipation A mJ 50 PD TC = 100 °C W 30 Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 2.5 Junction-to-Ambient RθJA 62.5 Case-to-Heatsink RθCS UNITS °C / W 0.6 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1％ 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 25 VGS(th) VDS = VGS, ID = 250µA 1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V 25 VDS = 20V, VGS = 0V, TC = 125 °C 250 Gate Threshold Voltage 1 V 1.6 3 nA µA Mar-07-2005 P0903BI N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM On-State Drain Current 1 Drain-Source On-State Resistance1 Forward Transconductance1 ID(ON) VDS = 10V, VGS = 10V RDS(ON) gfs TO-251 Lead-Free 50 A VGS = 4.5V, ID = 20A 11 16 VGS = 10V, ID = 25A 7.5 9.5 VDS = 10V, ID = 25A 32 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge2 2 1200 1800 600 1000 Crss 350 500 Qg 25 50 VGS = 0V, VDS = 15V, f = 1MHz Gate-Source Charge Qgs VDS = 10V, VGS = 10V, 15 Gate-Drain Charge2 Qgd ID = 25A 10 Turn-On Delay Time2 td(on) 2 tr Turn-Off Delay Time2 td(off) Rise Time Fall Time2 nC 6 16 VDS = 15V, RL = 1Ω 120 250 ID ≅ 50A, VGS = 10V, RGEN = 24Ω 40 90 105 200 tf pF nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 50 Pulsed Current 3 ISM 150 Forward Voltage1 VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS = 25A, VGS = 0V trr IRM(REC) IF = IS, dlF/dt = 100A / µS Qrr 0.9 1.3 A V 70 nS 200 A 0.043 µC Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THE PRODUCT MARKED WITH “P0903BI”, DATE CODE or LOT # 2 Mar-07-2005 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BI TO-251 Lead-Free TYPICAL CHARACTERISTICS 3 Mar-07-2005 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 P0903BI TO-251 Lead-Free Mar-07-2005 P0903BI N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-251 Lead-Free TO-251 (IPAK) MECHANICAL DATA mm mm Dimension Dimension Min. Typ. Max. Min. Typ. Max. A 13.7 15.3 H 1.4 2 B 2.2 2.4 I 6.4 6.8 C 0.4 0.6 J 5.2 5.5 D 0.4 0.6 K 0.6 0.9 E 0.9 1.5 L 0.4 0.8 F 7.0 8.0 M G 5.4 5.8 N 2.3 G E H F M 2 L K 1 J I 3 C D B A 5 Mar-07-2005