2SC4466 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 °C ∗hFE Rank 20.0min 3 PC 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 5.45±0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 30 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 0.34typ I B =10mA 0 0 1 2 3 2A 0 4 0 0.5 1.0 (V C E =4V) 200 DC Cur rent Gain h FE 125˚C Typ 50 1 100 25˚C –30˚C 50 20 0.02 56 0.1 Collector Current I C (A) 0.5 1 56 5 1 2 0.5 0.3 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 60 10 si nk Collector Curr ent I C ( A) at Without Heatsink Natural Cooling he 0.5 ite 1 40 fin 10 DC In 20 5 ith Typ 1m s ms 0m s 10 W 30 10 M aximum Power Dissipa ti on P C (W) 40 Cu t-off Fre quen cy f T (M H Z ) DC Curr ent Gain h F E 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 300 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.5 Base Current I B (A) h FE – I C Characteristics (Typical) 30 0.02 mp) p) I C =6A 4A Collector-Emitter Voltage V C E (V) 100 2 e Tem 1 (Cas 20mA 2 4 25˚C 30mA 2 e Te 50 mA 4 (V C E =4V) 6 3 Cas A 80m ˚C ( A 125 1 m 00 Collector Current I C (A) A θ j - a (˚ C/W) 15 0m 1.4 E I C – V BE Temperature Characteristics (Typical) Transient Thermal Resistance A C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) 20 0m 0.65 +0.2 -0.1 5.45±0.1 B 6 2.0±0.1 ø3.2±0.1 O(50 to100), P(70 to140), Y(90 to180) I C – V CE Characteristics (Typical) 4.8±0.2 b IB Tstg 15.6±0.4 9.6 1.8 V 10max 5.0±0.2 80 Unit VCB=120V ) VCEO Conditions Temp ICBO (Case V –30˚C 120 2.0 Unit VCBO External Dimensions MT-100(TO3P) (Ta=25°C) Ratings 19.9±0.3 Symbol 4.0 ■Electrical Characteristics Ratings Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20 Without Heatsink 0 –0.02 0.1 –0.1 –1 Emitter Current I E (A) –6 5 10 50 Collector-Emitter Voltage V C E (V) 100 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 107