CHENMKO ENTERPRISE CO.,LTD 2SC4617PT SURFACE MOUNT General Purpose NPN Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Power Amplifier . FEATURE SC-75/SOT-416 * Surface mount package. (SC-75/SOT-416) * Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.) * PC= 150mW (Collector power dissipation). (2) 0.1 0.2±0.05 (3) 1.0±0.1 0.1 0.3±0.05 * NPN Silicon Transistor * Epitaxial planner type (1) CONSTRUCTION 0.5 1.6±0.2 0.5 0.1 0.2±0.05 0.8±0.1 MARKING * hFE(Q): UX * hFE(R): UY * hFE(S): UZ 0.6~0.9 0.15±0.05 0~0.1 0.1Min. 1.6±0.2 C (3) CIRCUIT (1) B E (2) SC-75/SOT-416 Dimensions in millimeters MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - 60 Volts Collector - Emitter Voltage Open Base VCEO - 50 Volts Emitter - Base Voltage Open Collector VEBO - 7 Volts IC - 150 mAmps PTOT - 150 mW Storage Temperature TSTG -55 +150 o C Junction Temperature TJ - +150 o C Collector Current DC Collector Power Dissipation TA ≤ 25OC Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2003-12 RATING CHARACTERISTICS ( 2SC4617PT ) ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS IE=0; VCB=60V CONDITION ICBO - - 0.1 uA Emitter Cut-off Current IC=0; VEB=7V IEBO - - 0.1 uA DC Current Gain VCE=6V; Note 1 IC=1mA; Note 2 hFE 120 - 560 Collector-Emitter Saturation Voltage IC=50mA; IB=5mA VCEsat - - 0.4 Volts Collector-Emitter Breakdown Voltage IC=1mA VCEO 50 - - Volts Output Collector Capacitance IE=ie=0; VCB=12V; f=1MHz Cob - 2.0 3.5 pF Transition Frequency IE=-2mA; VCE=12V; f=100MHz fT - 180 - MHz Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE: Classification Q: 120 to 270, R: 180 to 390, S: 270 to 560 RATING CHARACTERISTIC CURVES ( 2SC4617PT ) Ta=100OC 10 5 2 1 0.5 25OC 55OC 100 Grounded emitter output characteristics (1) Ta=25°C 0.50mA 80 Fig.3 mA 0.45 A 0.40m 0.35mA 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA 10 COLLECTOR CURRENT : IC(mA) VCE=6V 25°C −55°C COLLECTOR CURRENT : IC(mA) 50 20 Fig.2 Grounded emitter propagation characteristics COLLECTOR CURRENT : IC(mA) Fig.1 Grounded emitter output characteristics (2) 30µA Ta=25°C 27µA 8 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 0.2 0.1 0 IB=0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE(V) 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE(V) 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE(V) RATING CHARACTERISTIC CURVES ( 2SC4617PT ) 0.5 IC/IB=10 0.2 0.1 Ta=100°C 25°C −55°C 0.05 IC/IB=50 Ta=100°C 25°C −55°C 0.1 0.05 0.02 0.02 0.01 0.01 0.2 0.2 Fig. 6 Gain bandwidth product vs. emitter current TRANSITION FREQUENCY : fT(MHz) 0.5 Fig.5 DC current gain vs. collector current DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) Fig.4 Collector-emitter saturation voltage vs. collector current 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC(mA) 0.2 0.5 1 2 5 10 20 COLLECTOR CURRENT : IC(mA) 50 100 500 Ta=25°C VCE=6V 200 100 50 −0.5 −1 −2 −5 −10 −20 EMITTER CURRENT : IE(mA) −50 −100