Power Transistors 2SC4621 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage (TC=25˚C) Symbol Ratings VCBO 500 V VCES 500 V VCEO 400 V VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A Base current IB 3 A dissipation Ta=25°C 70 PC Junction temperature Tj Storage temperature Tstg 2.0±0.2 2.0±0.1 1.1±0.1 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) W 3.0 ■ Electrical Characteristics φ3.2±0.1 Unit Emitter to base voltage Collector power TC=25°C 21.0±0.5 15.0±0.2 ● 5.0±0.2 3.2 16.2±0.5 12.5 3.5 Solder Dip ● 15.0±0.3 11.0±0.2 0.7 ■ Features 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ Unit 100 µA 100 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 400 hFE1 VCE = 5V, IC = 0.1A 15 hFE2 VCE = 5V, IC = 3A 8 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.6A 1 V Base to emitter saturation voltage VBE(sat) IC = 3A, IB = 0.6A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio VCB = 500V, IE = 0 max Collector cutoff current IC = 3A, IB1 = 0.6A, IB2 = –1.2A, VCC = 150V V 30 MHz 0.7 µs 2 µs 0.3 µs 1 Power Transistors 2SC4621 IC — VCE 60 50 40 30 20 (2) TC=25˚C Collector current IC (A) IB=300mA 4 250mA 200mA 3 150mA 100mA 2 80mA 60mA 40mA 1 20mA 10 (3) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 TC=–25˚C 1 100˚C 0.3 0.1 0.03 0.3 1 3 100 25˚C TC=100˚C 30 –25˚C 10 3 1 0.3 0.1 0.3 1 3 0.3 1 Switching time ton,tstg,tf (µs) 300 100 30 10 3 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=150V TC=25˚C VCE=10V f=10MHz TC=25˚C 300 100 30 10 3 1 0.1 0.3 1 3 10 10 3 tstg 1 ton 0.3 Non repetitive pulse TC=25˚C 30 tf 0.1 ICP t=0.1ms 10 IC 3 0.5ms 1ms 1 10ms DC 0.3 0.1 0.03 0.01 0.01 Collector to base voltage VCB (V) 10 Area of safe operation (ASO) 0.03 100 3 100 30 1000 30 0.1 Collector current IC (A) ton, tstg, tf — IC IE=0 f=1MHz TC=25˚C 10 0.01 0.01 0.03 0.1 0.01 0.03 10 100 3 0.03 Collector current IC (A) Cob — VCB 1 –25˚C 0.1 0.3 0.1 0.01 0.03 10 10000 0.3 TC=100˚C 0.3 fT — IC 300 Collector current IC (A) 3000 25˚C 1 Collector current IC (A) Transition frequency fT (MHz) 3 0.1 3 VCE=5V 10 0.01 0.01 0.03 10 1000 IC/IB=5 25˚C IC/IB=5 30 hFE — IC 30 1 0.1 10 1000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 8 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 Collector output capacitance Cob (pF) 6 Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) (1) 70 0 2 VCE(sat) — IC 5 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 80 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC4621 Area of safe operation, reverse bias ASO 16 ICP Lcoil=200µH IC/IB=5 (IB1=–IB2) TC=25˚C 14 Collector current IC (A) Reverse bias ASO measuring circuit L coil 12 IB1 10 –IB2 Vin 8 T.U.T IC VCC IC 6 4 Vclamp tW 2 0 0 100 200 300 400 500 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3