Ordering number : ENN3706B 2SC4637LS NPN Triple Diffused Planar Silicon Transistor 2SC4637LS 1800V / 15mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage(VCEO min=1800V). Small Cob(typical Cob=1.8pF). Full-isolation package. High reliability(Adoption of HVP process). unit : mm 2079D [2SC4637LS] 10.0 4.5 3.2 2.8 0.6 16.1 16.0 3.5 7.2 • Package Dimensions 1.2 1.2 14.0 3.6 0.9 0.75 0.7 1 2 3 2.4 1 : Base 2 : Collector 3 : Emitter Specifications 2.55 Absolute Maximum Ratings at Ta=25°C Parameter Symbol 2.55 SANYO : TO-220FI(LS) Conditions Ratings Unit Collector-to-Base Voltage VCBO 2000 Collector-to-Emitter Voltage VCEO 1800 V Emitter-to-Base Voltage VEBO 5 V 15 mA 50 mA Collector Dissipation IC ICP PC 2 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Collector Current Collector Current (Pulse) V Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol ICBO IEBO Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product hFE fT Conditions VCB=1800V, IE=0 VEB=4V, IC=0 VCE=5V, IC=300µA Ratings min typ 10 VCE=10V, IC=300µA Unit max 1 µA 1 µA 60 6 MHz Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6928 No.3706-1/3 2SC4637LS Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO V(BR)CEO IC=100µA, IE=0 IC=100µA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 VCB=100V, f=1MHz Cob Thermal Resistance Rthj-c 20µA 10µA 8µA 300 6µA 200 4µA 100 2µA IB=0 0 0 2 4 6 8 Ta=120°C 7 V 1800 V 5 V pF °C / W IC -- VCE 900µA 800µA 700µA 600µA A A 500µ A 400µ µ 0 30 A 1m 6 200µA 4 100µA 50µA 2 IB=0 0 0 2 4 6 8 10 Collector-to-Emitter Voltage, VCE -- V ITR07379 hFE -- IC 100 8 10 Collector-to-Emitter Voltage, VCE -- V V V 8.3 12µA 400 5 2 1.8 10 18µA 16µA Unit max Junction – case IC -- VCE 14µA typ 2000 Collector Current, IC -- mA Collector Current, IC -- µA 500 min IC=600µA, IB=120µA IC=600µA, IB=120µA Collector-to-Emitter Breakdown Voltage Output Capacitance Ratings Conditions IC -- VBE(on) 16 VCE=5V ITR07380 14 --40°C 2 10 7 5 10 8 0.6 0.8 6 4 2 3 0 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- mA 5 0 7 10 2 ITR07381 0.2 0.4 1.0 1.2 Base-to-Emitter ON Voltage, VBE(on) -- V f T -- IC 2 1.4 ITR07382 Cob -- VCB 5 VCE=10V f=1MHz 3 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 12 25°C --40°C 25°C 3 Ta=120°C Collector Current, IC -- mA DC Current Gain, hFE 5 10 7 5 3 2 2 7 5 3 2 1.0 7 5 1.0 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- mA 2 3 5 ITR07383 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 5 7 100 ITR07384 No.3706-2/3 2SC4637LS VCE(sat) -- IC 10 5 3 2 1.0 7 5 Ta=120°C 3 --40° C 2 25°C 3 2 1.0 Ta= --40°C 7 25°C 5 120°C 3 0.1 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 ITR07385 Collector Current, IC -- mA 3 IC=15mA 2 10 7 5 3 2 Collector Dissipation, PC -- W 3 1.0 7 5 3 Tc=25°C Single pulse 2 0.1 5 7 100 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 ITR07386 PC -- Ta 2.4 ≤100µs 20 50 0µs 0µ s 1 10 ms m DC s op er ati on ICP=50mA 5 Collector Current, IC -- mA ASO 100 7 5 Collector Current, IC -- mA IC / IB=5 5 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 VBE(sat) -- IC 7 IC / IB=5 2.0 1.6 No he at 1.2 sin k 0.8 0.4 0 2 3 5 7 1000 2 Collector-to-Emitter Voltage, VCE -- V 3 5 ITR07387 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 ITR07388 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice. PS No.3706-3/3