KEXIN 2SC5342SF

Transistors
IC
SMD Type
NPN Silicon Transistor
2SC5342SF
SOT-23
Features
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Large collector current: IC=500mA.
0.4
3
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
Low collector saturation voltage enabling low-voltage operation.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Collector dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=100ìA , IE=0
40
V
Collector-emitter breakdown voltage
BVCEO
IC=1mA , IB=0
32
V
Emitter-base breakdown voltage
5
BVEBO
IE=10ìA, IC=0
Collector cutoff current
ICBO
VCB=40V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB=5V, IC=0
0.1
ìA
hFE
VCE=1V, IC=-100mA
DC current transfer ratio
V
70
240
VCE(sat) IC/IB=100mA/10mA
Collector-emitter saturation voltage
Transition frequency
fT
Output capacitance
Cob
0.25
V
VCE=6V, IE=-20mA,
300
MHz
VCB=6V, IE=0, f=1MHz
7.5
pF
hFE Classification
BA
Marking
Rank
O
Y
hFE
70 140
120 240
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