Transistors IC SMD Type NPN Silicon Transistor 2SC5342SF SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Large collector current: IC=500mA. 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low collector saturation voltage enabling low-voltage operation. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Collector dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=100ìA , IE=0 40 V Collector-emitter breakdown voltage BVCEO IC=1mA , IB=0 32 V Emitter-base breakdown voltage 5 BVEBO IE=10ìA, IC=0 Collector cutoff current ICBO VCB=40V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB=5V, IC=0 0.1 ìA hFE VCE=1V, IC=-100mA DC current transfer ratio V 70 240 VCE(sat) IC/IB=100mA/10mA Collector-emitter saturation voltage Transition frequency fT Output capacitance Cob 0.25 V VCE=6V, IE=-20mA, 300 MHz VCB=6V, IE=0, f=1MHz 7.5 pF hFE Classification BA Marking Rank O Y hFE 70 140 120 240 www.kexin.com.cn 1